225 related articles for article (PubMed ID: 19940239)
1. Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits.
Nam S; Jiang X; Xiong Q; Ham D; Lieber CM
Proc Natl Acad Sci U S A; 2009 Dec; 106(50):21035-8. PubMed ID: 19940239
[TBL] [Abstract][Full Text] [Related]
2. Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.
Van NH; Lee JH; Whang D; Kang DJ
Nanoscale; 2016 Jun; 8(23):12022-8. PubMed ID: 27240692
[TBL] [Abstract][Full Text] [Related]
3. Radiation-Hard and Repairable Complementary Metal-Oxide-Semiconductor Circuits Integrating n-type Indium Oxide and p-type Carbon Nanotube Field-Effect Transistors.
Luo M; Zhu M; Wei M; Shao S; Robin M; Wei C; Cui Z; Zhao J; Zhang Z
ACS Appl Mater Interfaces; 2020 Nov; 12(44):49963-49970. PubMed ID: 33095560
[TBL] [Abstract][Full Text] [Related]
4. Low Power Consumption Complementary Inverters with n-MoS2 and p-WSe2 Dichalcogenide Nanosheets on Glass for Logic and Light-Emitting Diode Circuits.
Jeon PJ; Kim JS; Lim JY; Cho Y; Pezeshki A; Lee HS; Yu S; Min SW; Im S
ACS Appl Mater Interfaces; 2015 Oct; 7(40):22333-40. PubMed ID: 26399664
[TBL] [Abstract][Full Text] [Related]
5. Three-Dimensional Flexible Complementary Metal-Oxide-Semiconductor Logic Circuits Based On Two-Layer Stacks of Single-Walled Carbon Nanotube Networks.
Zhao Y; Li Q; Xiao X; Li G; Jin Y; Jiang K; Wang J; Fan S
ACS Nano; 2016 Feb; 10(2):2193-202. PubMed ID: 26768020
[TBL] [Abstract][Full Text] [Related]
6. Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.
Das T; Chen X; Jang H; Oh IK; Kim H; Ahn JH
Small; 2016 Nov; 12(41):5720-5727. PubMed ID: 27608439
[TBL] [Abstract][Full Text] [Related]
7. Selective Conversion from p-Type to n-Type of Printed Bottom-Gate Carbon Nanotube Thin-Film Transistors and Application in Complementary Metal-Oxide-Semiconductor Inverters.
Xu Q; Zhao J; Pecunia V; Xu W; Zhou C; Dou J; Gu W; Lin J; Mo L; Zhao Y; Cui Z
ACS Appl Mater Interfaces; 2017 Apr; 9(14):12750-12758. PubMed ID: 28337913
[TBL] [Abstract][Full Text] [Related]
8. High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown n-MoS
Jia X; Cheng Z; Han B; Cheng X; Wang Q; Ran Y; Xu W; Li Y; Gao P; Dai L
Small; 2023 May; 19(19):e2207927. PubMed ID: 36748299
[TBL] [Abstract][Full Text] [Related]
9. Layer-by-layer assembly of nanowires for three-dimensional, multifunctional electronics.
Javey A; Nam S; Friedman RS; Yan H; Lieber CM
Nano Lett; 2007 Mar; 7(3):773-7. PubMed ID: 17266383
[TBL] [Abstract][Full Text] [Related]
10. Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application.
Tomioka K; Izhizaka F; Fukui T
Nano Lett; 2015 Nov; 15(11):7253-7. PubMed ID: 26468962
[TBL] [Abstract][Full Text] [Related]
11. III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si.
Svensson J; Dey AW; Jacobsson D; Wernersson LE
Nano Lett; 2015 Dec; 15(12):7898-904. PubMed ID: 26595174
[TBL] [Abstract][Full Text] [Related]
12. Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes.
Wang C; Ryu K; Badmaev A; Zhang J; Zhou C
ACS Nano; 2011 Feb; 5(2):1147-53. PubMed ID: 21271709
[TBL] [Abstract][Full Text] [Related]
13. Programmable nanowire circuits for nanoprocessors.
Yan H; Choe HS; Nam S; Hu Y; Das S; Klemic JF; Ellenbogen JC; Lieber CM
Nature; 2011 Feb; 470(7333):240-4. PubMed ID: 21307937
[TBL] [Abstract][Full Text] [Related]
14. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.
Yang Y; Ding L; Han J; Zhang Z; Peng LM
ACS Nano; 2017 Apr; 11(4):4124-4132. PubMed ID: 28333433
[TBL] [Abstract][Full Text] [Related]
15. Top-down fabrication of fully CMOS-compatible silicon nanowire arrays and their integration into CMOS Inverters on plastic.
Lee M; Jeon Y; Moon T; Kim S
ACS Nano; 2011 Apr; 5(4):2629-36. PubMed ID: 21355599
[TBL] [Abstract][Full Text] [Related]
16. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.
Chen L; Cai F; Otuonye U; Lu WD
Nano Lett; 2016 Jan; 16(1):420-6. PubMed ID: 26674542
[TBL] [Abstract][Full Text] [Related]
17. Heterogeneous and Monolithic 3D Integration of III-V-Based Radio Frequency Devices on Si CMOS Circuits.
Jeong J; Kim SK; Kim J; Geum DM; Kim D; Jo E; Jeong H; Park J; Jang JH; Choi S; Kwon I; Kim S
ACS Nano; 2022 Jun; 16(6):9031-9040. PubMed ID: 35437991
[TBL] [Abstract][Full Text] [Related]
18. Mechanically Flexible and High-Performance CMOS Logic Circuits.
Honda W; Arie T; Akita S; Takei K
Sci Rep; 2015 Oct; 5():15099. PubMed ID: 26459882
[TBL] [Abstract][Full Text] [Related]
19. Flexible CMOS-Like Circuits Based on Printed P-Type and N-Type Carbon Nanotube Thin-Film Transistors.
Zhang X; Zhao J; Dou J; Tange M; Xu W; Mo L; Xie J; Xu W; Ma C; Okazaki T; Cui Z
Small; 2016 Sep; 12(36):5066-5073. PubMed ID: 27152874
[TBL] [Abstract][Full Text] [Related]
20. High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.
Van NH; Lee JH; Sohn JI; Cha SN; Whang D; Kim JM; Kang DJ
Nanoscale; 2014 May; 6(10):5479-83. PubMed ID: 24727896
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
