These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

220 related articles for article (PubMed ID: 19997272)

  • 41. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
    Zhao Y; Yan Q; Feezell D; Fujito K; Van de Walle CG; Speck JS; DenBaars SP; Nakamura S
    Opt Express; 2013 Jan; 21 Suppl 1():A53-9. PubMed ID: 23389275
    [TBL] [Abstract][Full Text] [Related]  

  • 42. Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.
    Lin BC; Chen KJ; Wang CH; Chiu CH; Lan YP; Lin CC; Lee PT; Shih MH; Kuo YK; Kuo HC
    Opt Express; 2014 Jan; 22(1):463-9. PubMed ID: 24515006
    [TBL] [Abstract][Full Text] [Related]  

  • 43. Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes.
    Zhang Y; Xie H; Zheng H; Wei T; Yang H; Li J; Yi X; Song X; Wang G; Li J
    Opt Express; 2012 Mar; 20(6):6808-15. PubMed ID: 22418563
    [TBL] [Abstract][Full Text] [Related]  

  • 44. High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).
    Koester R; Sager D; Quitsch WA; Pfingsten O; Poloczek A; Blumenthal S; Keller G; Prost W; Bacher G; Tegude FJ
    Nano Lett; 2015 Apr; 15(4):2318-23. PubMed ID: 25758029
    [TBL] [Abstract][Full Text] [Related]  

  • 45. Fabrication and characterization of freestanding circular GaN gratings.
    Wang Y; Hu F; Sameshima H; Hane K
    Opt Express; 2010 Jan; 18(2):773-9. PubMed ID: 20173899
    [TBL] [Abstract][Full Text] [Related]  

  • 46. Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.
    Sun B; Zhao L; Wei T; Yi X; Liu Z; Wang G; Li J; Yi F
    Opt Express; 2012 Aug; 20(17):18537-44. PubMed ID: 23038492
    [TBL] [Abstract][Full Text] [Related]  

  • 47. Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.
    Chen CY; Hsieh C; Liao CH; Chung WL; Chen HT; Cao W; Chang WM; Chen HS; Yao YF; Ting SY; Kiang YW; Yang CC; Hu X
    Opt Express; 2012 May; 20(10):11321-35. PubMed ID: 22565753
    [TBL] [Abstract][Full Text] [Related]  

  • 48. Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers.
    Li F; Mi Z
    Opt Express; 2009 Oct; 17(22):19933-9. PubMed ID: 19997217
    [TBL] [Abstract][Full Text] [Related]  

  • 49. Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers.
    Lu TC; Cheng BS; Liu MC
    Opt Express; 2009 Oct; 17(22):20149-54. PubMed ID: 19997239
    [TBL] [Abstract][Full Text] [Related]  

  • 50. Electrically pumped silicon waveguide light sources.
    Jayatilleka H; Nasrollahy-Shiraz A; Kenyon AJ
    Opt Express; 2011 Nov; 19(24):24569-76. PubMed ID: 22109485
    [TBL] [Abstract][Full Text] [Related]  

  • 51. Optically modulated internal strain in InGaN quantum dots grown on SiN(x) nano masks.
    Chang HJ; Chen TT; Huang LL; Chen YF; Tsai JY; Wang TC; Kuo HC
    Opt Express; 2008 Jan; 16(2):920-6. PubMed ID: 18542166
    [TBL] [Abstract][Full Text] [Related]  

  • 52. Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure.
    Diana FS; David A; Meinel I; Sharma R; Weisbuch C; Nakamura S; Petroff PM
    Nano Lett; 2006 Jun; 6(6):1116-20. PubMed ID: 16771564
    [TBL] [Abstract][Full Text] [Related]  

  • 53. Single gallium nitride nanowire lasers.
    Johnson JC; Choi HJ; Knutsen KP; Schaller RD; Yang P; Saykally RJ
    Nat Mater; 2002 Oct; 1(2):106-10. PubMed ID: 12618824
    [TBL] [Abstract][Full Text] [Related]  

  • 54. Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays.
    Henson J; Dimakis E; DiMaria J; Li R; Minissale S; Dal Negro L; Moustakas TD; Paiella R
    Opt Express; 2010 Sep; 18(20):21322-9. PubMed ID: 20941028
    [TBL] [Abstract][Full Text] [Related]  

  • 55. Gold-nanoparticle-assisted random lasing from powdered GaN.
    Nakamura T; Hosaka T; Adachi S
    Opt Express; 2011 Jan; 19(2):467-75. PubMed ID: 21263586
    [TBL] [Abstract][Full Text] [Related]  

  • 56. Lithographic fine-tuning of vertical cavity surface emitting laser-pumped two-dimensional photonic crystal lasers.
    Cao JR; Lee PT; Choi SJ; O'Brien JD; Dapkus PD
    J Nanosci Nanotechnol; 2002; 2(3-4):313-5. PubMed ID: 12908256
    [TBL] [Abstract][Full Text] [Related]  

  • 57. Nanolasers grown on silicon-based MOSFETs.
    Lu F; Tran TT; Ko WS; Ng KW; Chen R; Chang-Hasnain C
    Opt Express; 2012 May; 20(11):12171-6. PubMed ID: 22714204
    [TBL] [Abstract][Full Text] [Related]  

  • 58. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures.
    Ee YK; Kumnorkaew P; Arif RA; Tong H; Gilchrist JF; Tansu N
    Opt Express; 2009 Aug; 17(16):13747-57. PubMed ID: 19654782
    [TBL] [Abstract][Full Text] [Related]  

  • 59. An improvement of light extraction efficiency for GaN-based light emitting diodes by selective etched nanorods in periodic microholes.
    Kim SH; Park HH; Song YH; Park HJ; Kim JB; Jeon SR; Jeong H; Jeong MS; Yang GM
    Opt Express; 2013 Mar; 21(6):7125-30. PubMed ID: 23546094
    [TBL] [Abstract][Full Text] [Related]  

  • 60. Coherent vertical beaming using Bragg mirrors for high-efficiency GaN light-emitting diodes.
    Kim SK; Park HG
    Opt Express; 2013 Jun; 21(12):14566-72. PubMed ID: 23787644
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 11.