These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

127 related articles for article (PubMed ID: 20124665)

  • 1. Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations.
    Li Y; Hwang CH; Han MH
    Nanotechnology; 2010 Mar; 21(9):095203. PubMed ID: 20124665
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Electrical characteristic fluctuation of 16-nm-gate trapezoidal bulk FinFET devices with fixed top-fin width induced by random discrete dopants.
    Huang WT; Li Y
    Nanoscale Res Lett; 2015; 10():116. PubMed ID: 25897299
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Quantum mechanical device modeling: FinFET having an isolated n+/p+ gate region strapped with poly-silicon.
    Kim HG; Kim JS; Kim YK; Won T
    J Nanosci Nanotechnol; 2007 Nov; 7(11):4135-8. PubMed ID: 18047135
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Extremely scaled 3-dimensional multiple-gate technologies for terabit era.
    Choi YK; Kim KH; Han JW; Ryu SW; Lee H
    J Nanosci Nanotechnol; 2007 Nov; 7(11):4126-30. PubMed ID: 18047133
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits.
    Li Y; Chen CY; Chuang MH; Chao PJ
    Materials (Basel); 2019 May; 12(9):. PubMed ID: 31071936
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer.
    Li Y; Chuang MH; Tsai YC
    Nanoscale Res Lett; 2022 Jan; 17(1):16. PubMed ID: 35061127
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Attofarad resolution capacitance-voltage measurement of nanometer scale field effect transistors utilizing ambient noise.
    Gokirmak A; Inaltekin H; Tiwari S
    Nanotechnology; 2009 Aug; 20(33):335203. PubMed ID: 19636094
    [TBL] [Abstract][Full Text] [Related]  

  • 8. DC modeling and the source of flicker noise in passivated carbon nanotube transistors.
    Kim S; Kim S; Janes DB; Mohammadi S; Back J; Shim M
    Nanotechnology; 2010 Sep; 21(38):385203. PubMed ID: 20798468
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps.
    Hsu SC; Li Y
    Nanoscale Res Lett; 2014; 9(1):633. PubMed ID: 25520590
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit.
    Han K; Qiao G; Deng Z; Zhang Y
    Micromachines (Basel); 2017 Nov; 8(11):. PubMed ID: 30400520
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Influence of Number Fluctuation and Position Variation of Channel Dopants and Gate Metal Grains on Tunneling Field-Effect Transistors (TFETs).
    Choi KM; Kim SK; Choi WY
    J Nanosci Nanotechnol; 2016 May; 16(5):5255-8. PubMed ID: 27483910
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Polymer electrolyte-gated organic field-effect transistors: low-voltage, high-current switches for organic electronics and testbeds for probing electrical transport at high charge carrier density.
    Panzer MJ; Frisbie CD
    J Am Chem Soc; 2007 May; 129(20):6599-607. PubMed ID: 17472381
    [TBL] [Abstract][Full Text] [Related]  

  • 13. A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs.
    Seoane N; Nagy D; Indalecio G; Espiñeira G; Kalna K; García-Loureiro A
    Materials (Basel); 2019 Jul; 12(15):. PubMed ID: 31357496
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Silicon device scaling to the sub-10-nm regime.
    Ieong M; Doris B; Kedzierski J; Rim K; Yang M
    Science; 2004 Dec; 306(5704):2057-60. PubMed ID: 15604400
    [TBL] [Abstract][Full Text] [Related]  

  • 15. High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates.
    Javey A; Kim H; Brink M; Wang Q; Ural A; Guo J; McIntyre P; McEuen P; Lundstrom M; Dai H
    Nat Mater; 2002 Dec; 1(4):241-6. PubMed ID: 12618786
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.
    Hong WK; Jo G; Sohn JI; Park W; Choe M; Wang G; Kahng YH; Welland ME; Lee T
    ACS Nano; 2010 Feb; 4(2):811-8. PubMed ID: 20112950
    [TBL] [Abstract][Full Text] [Related]  

  • 17. A Feasible Alternative to FDSOI and FinFET: Optimization of W/La
    Mah SK; Ker PJ; Ahmad I; Zainul Abidin NF; Ali Gamel MM
    Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34640118
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Ge/Si nanowire heterostructures as high-performance field-effect transistors.
    Xiang J; Lu W; Hu Y; Wu Y; Yan H; Lieber CM
    Nature; 2006 May; 441(7092):489-93. PubMed ID: 16724062
    [TBL] [Abstract][Full Text] [Related]  

  • 19. 3D modeling of dual-gate FinFET.
    Mil'shtein S; Devarakonda L; Zanchi B; Palma J
    Nanoscale Res Lett; 2012 Nov; 7(1):625. PubMed ID: 23148493
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs).
    Parikh P; Senowitz C; Lyons D; Martin I; Prosa TJ; DiBattista M; Devaraj A; Meng YS
    Microsc Microanal; 2017 Oct; 23(5):916-925. PubMed ID: 28854989
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.