These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

176 related articles for article (PubMed ID: 20174122)

  • 1. Fabrication and characterization of subwavelength nanostructures on freestanding GaN slab.
    Wang Y; Hu F; Kanamori Y; Sameshima H; Hane K
    Opt Express; 2010 Feb; 18(3):2940-5. PubMed ID: 20174122
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Fabrication and characterization of freestanding circular GaN gratings.
    Wang Y; Hu F; Sameshima H; Hane K
    Opt Express; 2010 Jan; 18(2):773-9. PubMed ID: 20173899
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Large area, freestanding GaN nanocolumn membrane with bottom subwavelength nanostructure.
    Wang Y; Hu F; Kanamori Y; Wu T; Hane K
    Opt Express; 2010 Mar; 18(6):5504-11. PubMed ID: 20389567
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy.
    Wang Y; Hu F; Hane K
    Nanoscale Res Lett; 2011 Feb; 6(1):117. PubMed ID: 21711618
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Experimental observation of lateral emission in freestanding GaN-based membrane devices.
    Shi Z; Li X; Fang X; Huang X; Zhu H; Wang Y
    Opt Lett; 2014 Aug; 39(16):4931-3. PubMed ID: 25121911
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs.
    Soh CB; Wang B; Chua SJ; Lin VK; Tan RJ; Tripathy S
    Nanotechnology; 2008 Oct; 19(40):405303. PubMed ID: 21832613
    [TBL] [Abstract][Full Text] [Related]  

  • 7. An InGaN/GaN single quantum well improved by surface modification of GaN films.
    Fang ZL; Kang JY; Shen WZ
    Nanotechnology; 2009 Jan; 20(4):045401. PubMed ID: 19417316
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Zero-internal fields in nonpolar InGaN/GaN multi-quantum wells grown by the multi-buffer layer technique.
    Song H; Kim JS; Kim EK; Seo YG; Hwang SM
    Nanotechnology; 2010 Apr; 21(13):134026. PubMed ID: 20208099
    [TBL] [Abstract][Full Text] [Related]  

  • 9. White emission by self-regulated growth of InGaN/GaN quantum wells on in situ self-organized faceted n-GaN islands.
    Fang Z
    Nanotechnology; 2011 Aug; 22(31):315706. PubMed ID: 21730755
    [TBL] [Abstract][Full Text] [Related]  

  • 10. A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining.
    Hu FR; Kanamori Y; Ochi K; Zhao Y; Wakui M; Hane K
    Nanotechnology; 2008 Jan; 19(3):035305. PubMed ID: 21817568
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields.
    Park H; Kim BJ; Kim J
    Opt Express; 2012 Nov; 20(23):25249-54. PubMed ID: 23187341
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Enhanced radiative recombination and suppressed Auger process in semipolar and nonpolar InGaN/GaN quantum wells grown over GaN nanowires.
    You G; Liu J; Jiang Z; Wang L; El-Masry NA; Hosalli AM; Bedair SM; Xu J
    Opt Lett; 2014 Mar; 39(6):1501-4. PubMed ID: 24690823
    [TBL] [Abstract][Full Text] [Related]  

  • 13. On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities.
    Cai W; Yang Y; Gao X; Yuan J; Yuan W; Zhu H; Wang Y
    Opt Express; 2016 Mar; 24(6):6004-10. PubMed ID: 27136794
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN light-emitting diodes.
    Kim HG; Kim HK; Kim HY; Jeong H; Chandramohan S; Uthirakumar P; Jeong MS; Lee JS; Suh EK; Hong CH
    Opt Lett; 2010 Sep; 35(18):3012-4. PubMed ID: 20847762
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Surface-normal emission from subwavelength GaN membrane grating.
    Wang Y; Shi Z; Li X; He S; Zhang M; Zhu H
    Opt Express; 2014 Jan; 22(1):667-72. PubMed ID: 24515026
    [TBL] [Abstract][Full Text] [Related]  

  • 16. The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching.
    Sievilä P; Chekurov N; Tittonen I
    Nanotechnology; 2010 Apr; 21(14):145301. PubMed ID: 20215652
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods.
    Chen W; Wen X; Latzel M; Heilmann M; Yang J; Dai X; Huang S; Shrestha S; Patterson R; Christiansen S; Conibeer G
    ACS Appl Mater Interfaces; 2016 Nov; 8(46):31887-31893. PubMed ID: 27797477
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Interface modification of the InGaN/GaN quantum wells: the strain pre-relief effect.
    Fang ZL; Lin DQ; Kang JY; Kong JF; Shen WZ
    Nanotechnology; 2009 Jun; 20(23):235401. PubMed ID: 19448299
    [TBL] [Abstract][Full Text] [Related]  

  • 19. The investigation of
    Lee M; Mikulik D; Park S
    RSC Adv; 2018 Mar; 8(22):12310-12314. PubMed ID: 35539420
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Toward highly radiative white light emitting nanostructures: a new approach to dislocation-eliminated GaN/InGaN core-shell nanostructures with a negligible polarization field.
    Kim JH; Ko YH; Cho JH; Gong SH; Ko SM; Cho YH
    Nanoscale; 2014 Nov; 6(23):14213-20. PubMed ID: 25225912
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.