825 related articles for article (PubMed ID: 20179329)
1. Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.
Chen Y; Li C; Lai H; Chen S
Nanotechnology; 2010 Mar; 21(11):115207. PubMed ID: 20179329
[TBL] [Abstract][Full Text] [Related]
2. Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells.
Pizzi G; Virgilio M; Grosso G
Nanotechnology; 2010 Feb; 21(5):055202. PubMed ID: 20023310
[TBL] [Abstract][Full Text] [Related]
3. Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures.
Chaisakul P; Marris-Morini D; Isella G; Chrastina D; Le Roux X; Gatti E; Edmond S; Osmond J; Cassan E; Vivien L
Opt Lett; 2010 Sep; 35(17):2913-5. PubMed ID: 20808367
[TBL] [Abstract][Full Text] [Related]
4. Room Temperature Electroluminescence from Tensile-Strained Si
Lin G; Chen N; Zhang L; Huang Z; Huang W; Wang J; Xu J; Chen S; Li C
Materials (Basel); 2016 Sep; 9(10):. PubMed ID: 28773923
[TBL] [Abstract][Full Text] [Related]
5. Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon.
Lever L; Hu Y; Myronov M; Liu X; Owens N; Gardes FY; Marko IP; Sweeney SJ; Ikonić Z; Leadley DR; Reed GT; Kelsall RW
Opt Lett; 2011 Nov; 36(21):4158-60. PubMed ID: 22048350
[TBL] [Abstract][Full Text] [Related]
6. Influence of the Si cap layer on the SiGe islands morphology.
Zak M; Laval JY; Dłuzewski PA; Kret S; Yam V; Bouchier D; Fossard F
Micron; 2009 Jan; 40(1):122-5. PubMed ID: 18395456
[TBL] [Abstract][Full Text] [Related]
7. Quantum-confined Stark effect at 1.3 μm in Ge/Si(0.35)Ge(0.65) quantum-well structure.
Rouifed MS; Chaisakul P; Marris-Morini D; Frigerio J; Isella G; Chrastina D; Edmond S; Le Roux X; Coudevylle JR; Vivien L
Opt Lett; 2012 Oct; 37(19):3960-2. PubMed ID: 23027245
[TBL] [Abstract][Full Text] [Related]
8. Strain engineered SiGe multiple-quantum-well nanomembranes for far-infrared intersubband device applications.
Sookchoo P; Sudradjat FF; Kiefer AM; Durmaz H; Paiella R; Lagally MG
ACS Nano; 2013 Mar; 7(3):2326-34. PubMed ID: 23402572
[TBL] [Abstract][Full Text] [Related]
9. Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth.
Kim Y; Yokoyama M; Taoka N; Takenaka M; Takagi S
Opt Express; 2013 Aug; 21(17):19615-23. PubMed ID: 24105508
[TBL] [Abstract][Full Text] [Related]
10. [Influence of strain in the Si cap layer of Si/SiGe heterostructure on its Raman spectra].
Xiao QH; Tu HL
Guang Pu Xue Yu Guang Pu Fen Xi; 2005 May; 25(5):719-22. PubMed ID: 16128072
[TBL] [Abstract][Full Text] [Related]
11. Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response.
Chang GE; Chen SW; Cheng HH
Opt Express; 2016 Aug; 24(16):17562-71. PubMed ID: 27505727
[TBL] [Abstract][Full Text] [Related]
12. Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode.
Sun G; Soref RA; Cheng HH
Opt Express; 2010 Sep; 18(19):19957-65. PubMed ID: 20940887
[TBL] [Abstract][Full Text] [Related]
13. Quantum-confined photoluminescence from Ge(1-x)Sn(x)/Ge superlattices on Ge-buffered Si(001) substrates.
Chang GE; Hsieh WY; Chen JZ; Cheng HH
Opt Lett; 2013 Sep; 38(18):3485-7. PubMed ID: 24104794
[TBL] [Abstract][Full Text] [Related]
14. Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift.
De Seta M; Capellini G; Ortolani M; Virgilio M; Grosso G; Nicotra G; Zaumseil P
Nanotechnology; 2012 Nov; 23(46):465708. PubMed ID: 23093292
[TBL] [Abstract][Full Text] [Related]
15. Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides.
Chaisakul P; Marris-Morini D; Isella G; Chrastina D; Le Roux X; Edmond S; Coudevylle JR; Cassan E; Vivien L
Opt Lett; 2011 May; 36(10):1794-6. PubMed ID: 21593893
[TBL] [Abstract][Full Text] [Related]
16. Heterogeneously-Grown Tunable Tensile Strained Germanium on Silicon for Photonic Devices.
Clavel M; Saladukha D; Goley PS; Ochalski TJ; Murphy-Armando F; Bodnar RJ; Hudait MK
ACS Appl Mater Interfaces; 2015 Dec; 7(48):26470-81. PubMed ID: 26561963
[TBL] [Abstract][Full Text] [Related]
17. Band offsets and photocurrent spectroscopy of Si/Ge heterostructures with quantum dots.
Kondratenko SV; Nikolenko AS; Vakulenko OV; Valakh MY; Yukhymchuk VO; Dvurechenskii AV; Nikiforov AI
Nanotechnology; 2008 Apr; 19(14):145703. PubMed ID: 21817769
[TBL] [Abstract][Full Text] [Related]
18. Conduction intersubband transitions at normal incidence in Si(1-x)Ge(x) quantum well devices.
Virgilio M; Grosso G
Nanotechnology; 2007 Feb; 18(7):075402. PubMed ID: 21730501
[TBL] [Abstract][Full Text] [Related]
19. The impact of erbium incorporation on the structure and photophysics of silicon-germanium nanowires.
Wu J; Wieligor M; Zerda TW; Coffer JL
Nanoscale; 2010 Dec; 2(12):2657-67. PubMed ID: 20931125
[TBL] [Abstract][Full Text] [Related]
20. Elastically relaxed free-standing strained-silicon nanomembranes.
Roberts MM; Klein LJ; Savage DE; Slinker KA; Friesen M; Celler G; Eriksson MA; Lagally MG
Nat Mater; 2006 May; 5(5):388-93. PubMed ID: 16604081
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
