These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

140 related articles for article (PubMed ID: 20192467)

  • 1. Carborane beam from ITEP Bernas ion source for semiconductor implanters.
    Seleznev D; Kropachev G; Kozlov A; Kuibeda R; Koshelev V; Kulevoy T; Hershcovitch A; Jonson B; Poole J; Alexeyenko O; Gurkova E; Oks E; Gushenets V; Polozov S; Masunov E
    Rev Sci Instrum; 2010 Feb; 81(2):02B901. PubMed ID: 20192467
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Status of ITEP decaborane ion source program.
    Kulevoy TV; Petrenko SV; Kuibeda RP; Seleznev DN; Koshelev VA; Kozlov AV; Stasevich YB; Sitnikov AL; Shamailov IM; Pershin VI; Hershcovitch A; Johnson BM; Gushenets VI; Oks EM; Poole HP; Masunov ES; Polozov SM
    Rev Sci Instrum; 2008 Feb; 79(2 Pt 2):02C501. PubMed ID: 18315244
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Ion sources for energy extremes of ion implantation.
    Hershcovitch A; Johnson BM; Batalin VA; Kropachev GN; Kuibeda RP; Kulevoy TV; Kolomiets AA; Pershin VI; Petrenko SV; Rudskoy I; Seleznev DN; Bugaev AS; Gushenets VI; Litovko IV; Oks EM; Yushkov GY; Masunov ES; Polozov SM; Poole HJ; Storozhenko PA; Svarovski AY
    Rev Sci Instrum; 2008 Feb; 79(2 Pt 2):02C507. PubMed ID: 18315250
    [TBL] [Abstract][Full Text] [Related]  

  • 4. ITEP MEVVA ion beam for rhenium silicide production.
    Kulevoy T; Gerasimenko N; Seleznev D; Kropachev G; Kozlov A; Kuibeda R; Yakushin P; Petrenko S; Medetov N; Zaporozhan O
    Rev Sci Instrum; 2010 Feb; 81(2):02B905. PubMed ID: 20192471
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Development of the ion source for cluster implantation.
    Kulevoy TV; Seleznev DN; Kozlov AV; Kuibeda RP; Kropachev GN; Alexeyenko OV; Dugin SN; Oks EM; Gushenets VI; Hershcovitch A; Jonson B; Poole HJ
    Rev Sci Instrum; 2014 Feb; 85(2):02A501. PubMed ID: 24593424
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Molecular ion sources for low energy semiconductor ion implantation (invited).
    Hershcovitch A; Gushenets VI; Seleznev DN; Bugaev AS; Dugin S; Oks EM; Kulevoy TV; Alexeyenko O; Kozlov A; Kropachev GN; Kuibeda RP; Minaev S; Vizir A; Yushkov GY
    Rev Sci Instrum; 2016 Feb; 87(2):02B702. PubMed ID: 26932065
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Bernas ion source discharge simulation.
    Roudskoy I; Kulevoy TV; Petrenko SV; Kuibeda RP; Seleznev DN; Pershin VI; Hershcovitch A; Johnson BM; Gushenets VI; Oks EM; Poole HP
    Rev Sci Instrum; 2008 Feb; 79(2 Pt 2):02B313. PubMed ID: 18315179
    [TBL] [Abstract][Full Text] [Related]  

  • 8. An electron cyclotron resonance ion source based low energy ion beam platform.
    Sun LT; Shang Y; Ma BH; Zhang XZ; Feng YC; Li XX; Wang H; Guo XH; Song MT; Zhao HY; Zhang ZM; Zhao HW; Xie DZ
    Rev Sci Instrum; 2008 Feb; 79(2 Pt 2):02B711. PubMed ID: 18315202
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Modeling of the charge-state separation at ITEP experimental facility for material science based on a Bernas ion source.
    Barminova HY; Saratovskyh MS
    Rev Sci Instrum; 2016 Feb; 87(2):02B914. PubMed ID: 26932086
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Intense beam production of highly charged heavy ions by the superconducting electron cyclotron resonance ion source SECRAL.
    Zhao HW; Sun LT; Zhang XZ; Guo XH; Cao Y; Lu W; Zhang ZM; Yuan P; Song MT; Zhao HY; Jin T; Shang Y; Zhan WL; Wei BW; Xie DZ
    Rev Sci Instrum; 2008 Feb; 79(2 Pt 2):02A315. PubMed ID: 18315105
    [TBL] [Abstract][Full Text] [Related]  

  • 11. ITEP MEVVA ion beam for reactor material investigation.
    Kulevoy T; Kuibeda R; Kropachev G; Kozlov A; Chalyh B; Aleev A; Fertman A; Nikitin A; Rogozhkin S
    Rev Sci Instrum; 2010 Feb; 81(2):02B906. PubMed ID: 20192472
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Rhenium ion beam for implantation into semiconductors.
    Kulevoy TV; Gerasimenko NN; Seleznev DN; Fedorov PA; Temirov AA; Alyoshin ME; Kraevsky SV; Smirnov DI; Yakushin PE; Khoroshilov VV
    Rev Sci Instrum; 2012 Feb; 83(2):02B913. PubMed ID: 22380345
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Investigations of the emittance and brightness of ion beams from an electron beam ion source of the Dresden EBIS type.
    Silze A; Ritter E; Zschornack G; Schwan A; Ullmann F
    Rev Sci Instrum; 2010 Feb; 81(2):023303. PubMed ID: 20192488
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Multiaperture ion beam extraction from gas-dynamic electron cyclotron resonance source of multicharged ions.
    Sidorov A; Dorf M; Zorin V; Bokhanov A; Izotov I; Razin S; Skalyga V; Rossbach J; Spädtke P; Balabaev A
    Rev Sci Instrum; 2008 Feb; 79(2 Pt 2):02A317. PubMed ID: 18315107
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Boron ion source based on planar magnetron discharge in self-sputtering mode.
    Gushenets VI; Hershcovitch A; Kulevoy TV; Oks EM; Savkin KP; Vizir AV; Yushkov GY
    Rev Sci Instrum; 2010 Feb; 81(2):02B303. PubMed ID: 20192426
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Front-end simulation of injector for terawatt accumulator.
    Kropachev GN; Balabin AI; Kolomiets AA; Kulevoy TV; Pershin VI; Shumshurov AV
    Rev Sci Instrum; 2008 Feb; 79(2 Pt 2):02B722. PubMed ID: 18315213
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Model for the description of ion beam extraction from electron cyclotron resonance ion sources.
    Spädtke P
    Rev Sci Instrum; 2010 Feb; 81(2):02B725. PubMed ID: 20192465
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Temporal development of ion beam mean charge state in pulsed vacuum arc ion sources.
    Oks EM; Yushkov GY; Anders A
    Rev Sci Instrum; 2008 Feb; 79(2 Pt 2):02B301. PubMed ID: 18315167
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Extraction simulations and emittance measurements of a Holifield Radioactive Ion Beam Facility electron beam plasma source for radioactive ion beams.
    Mendez AJ; Liu Y
    Rev Sci Instrum; 2010 Feb; 81(2):02B712. PubMed ID: 20192452
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Current capabilities and future needs for semiconductor ion implantation (invited).
    Renau A
    Rev Sci Instrum; 2010 Feb; 81(2):02B907. PubMed ID: 20192473
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.