These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

176 related articles for article (PubMed ID: 20203350)

  • 1. Low density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths.
    Richter D; Hafenbrak R; Jöns KD; Schulz WM; Eichfelder M; Heldmaier M; Rossbach R; Jetter M; Michler P
    Nanotechnology; 2010 Mar; 21(12):125606. PubMed ID: 20203350
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy.
    Mano T; Abbarchi M; Kuroda T; Mastrandrea CA; Vinattieri A; Sanguinetti S; Sakoda K; Gurioli M
    Nanotechnology; 2009 Sep; 20(39):395601. PubMed ID: 19724114
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.
    Skiba-Szymanska J; Jamil A; Farrer I; Ward MB; Nicoll CA; Ellis DJ; Griffiths JP; Anderson D; Jones GA; Ritchie DA; Shields AJ
    Nanotechnology; 2011 Feb; 22(6):065302. PubMed ID: 21212488
    [TBL] [Abstract][Full Text] [Related]  

  • 4. InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm.
    Strauss M; Höfling S; Forchel A
    Nanotechnology; 2009 Dec; 20(50):505601. PubMed ID: 19907066
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.
    Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y
    Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334
    [TBL] [Abstract][Full Text] [Related]  

  • 6. GaSb/GaAs type-II quantum dots grown by droplet epitaxy.
    Liang B; Lin A; Pavarelli N; Reyner C; Tatebayashi J; Nunna K; He J; Ochalski TJ; Huyet G; Huffaker DL
    Nanotechnology; 2009 Nov; 20(45):455604. PubMed ID: 19834245
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Dense arrays of ordered pyramidal quantum dots with narrow linewidth photoluminescence spectra.
    Surrente A; Gallo P; Felici M; Dwir B; Rudra A; Kapon E
    Nanotechnology; 2009 Oct; 20(41):415205. PubMed ID: 19762950
    [TBL] [Abstract][Full Text] [Related]  

  • 8. First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth.
    Yin Z; Tang X; Zhang J; Deny S; Teng J; Du A; Chin MK
    Nanotechnology; 2008 Feb; 19(8):085603. PubMed ID: 21730727
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy.
    Schramm A; Tommila J; Strelow C; Hakkarainen TV; Tukiainen A; Dumitrescu M; Mews A; Kipp T; Guina M
    Nanotechnology; 2012 May; 23(17):175701. PubMed ID: 22481170
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Single site-controlled In(Ga)As/GaAs quantum dots: growth, properties and device integration.
    Schneider C; Huggenberger A; Sünner T; Heindel T; Strauss M; Göpfert S; Weinmann P; Reitzenstein S; Worschech L; Kamp M; Höfling S; Forchel A
    Nanotechnology; 2009 Oct; 20(43):434012. PubMed ID: 19801767
    [TBL] [Abstract][Full Text] [Related]  

  • 11. High extractive single-photon emissions from InGaAs quantum dots on a GaAs pyramid-like multifaceted structure.
    Chang HS; Hsu CM; Chen WY; Hsieh TP; Chyi JI; Hsu TM
    Nanotechnology; 2008 Jan; 19(4):045714. PubMed ID: 21817531
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy.
    Rödel R; Bauer A; Kremling S; Reitzenstein S; Höfling S; Kamp M; Worschech L; Forchel A
    Nanotechnology; 2012 Jan; 23(1):015605. PubMed ID: 22156168
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Microphotoluminescence spectroscopy of single CdTe/ZnTe quantum dots grown on Si001 substrates.
    Lee HS; Rastelli A; Benyoucef M; Ding F; Kim TW; Park HL; Schmidt OG
    Nanotechnology; 2009 Feb; 20(7):075705. PubMed ID: 19417433
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems.
    Shen J; Song Y; Lee ML; Cha JJ
    Nanotechnology; 2014 Nov; 25(46):465702. PubMed ID: 25354930
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Morphology and optical properties of single- and multi-layer InAs quantum dots.
    Hsu CC; Hsu RQ; Wu YH
    J Electron Microsc (Tokyo); 2010 Aug; 59 Suppl 1():S149-54. PubMed ID: 20576720
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer.
    Sala EM; Godsland M; Na YI; Trapalis A; Heffernan J
    Nanotechnology; 2021 Nov; 33(6):. PubMed ID: 34731846
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Stacked GaAs quantum dots fabricated by refilling of self-organized nanoholes: optical properties and post-growth annealing.
    Polojärvi V; Schramm A; Guina M; Stemmann A; Heyn C
    Nanotechnology; 2011 Mar; 22(10):105603. PubMed ID: 21289401
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure.
    Mazur YI; Dorogan VG; Schmidbauer M; Tarasov GG; Johnson SR; Lu X; Yu SQ; Wang ZhM; Tiedje T; Salamo GJ
    Nanotechnology; 2011 Sep; 22(37):375703. PubMed ID: 21852736
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Triggered high-purity telecom-wavelength single-photon generation from p-shell-driven InGaAs/GaAs quantum dot.
    Dusanowski Ł; Holewa P; Maryński A; Musiał A; Heuser T; Srocka N; Quandt D; Strittmatter A; Rodt S; Misiewicz J; Reitzenstein S; Sęk G
    Opt Express; 2017 Dec; 25(25):31122-31129. PubMed ID: 29245789
    [TBL] [Abstract][Full Text] [Related]  

  • 20. The structural and optical characterization of high areal density Ga(x)In(1-x)P quantum dots on GaP.
    Gerhard S; Baumann V; Höfling S; Forchel A
    Nanotechnology; 2009 Oct; 20(43):434016. PubMed ID: 19801768
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.