399 related articles for article (PubMed ID: 20498519)
1. Direct-write fabrication of a nanoscale digital logic element on a single nanowire.
Roy S; Gao Z
Nanotechnology; 2010 Jun; 21(24):245306. PubMed ID: 20498519
[TBL] [Abstract][Full Text] [Related]
2. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
Yoon A; Hong WK; Lee T
J Nanosci Nanotechnol; 2007 Nov; 7(11):4101-5. PubMed ID: 18047128
[TBL] [Abstract][Full Text] [Related]
3. NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers.
Yeom D; Keem K; Kang J; Jeong DY; Yoon C; Kim D; Kim S
Nanotechnology; 2008 Jul; 19(26):265202. PubMed ID: 21828674
[TBL] [Abstract][Full Text] [Related]
4. Complementary symmetry nanowire logic circuits: experimental demonstrations and in silico optimizations.
Sheriff BA; Wang D; Heath JR; Kurtin JN
ACS Nano; 2008 Sep; 2(9):1789-98. PubMed ID: 19206417
[TBL] [Abstract][Full Text] [Related]
5. Long single ZnO nanowire for logic and memory circuits: NOT, NAND, NOR gate, and SRAM.
Lee YT; Ali Raza SR; Jeon PJ; Ha R; Choi HJ; Im S
Nanoscale; 2013 May; 5(10):4181-5. PubMed ID: 23584636
[TBL] [Abstract][Full Text] [Related]
6. Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.
Hong WK; Jo G; Sohn JI; Park W; Choe M; Wang G; Kahng YH; Welland ME; Lee T
ACS Nano; 2010 Feb; 4(2):811-8. PubMed ID: 20112950
[TBL] [Abstract][Full Text] [Related]
7. Tuning of operation mode of ZnO nanowire field effect transistors by solvent-driven surface treatment.
Park W; Hong WK; Jo G; Wang G; Choe M; Maeng J; Kahng YH; Lee T
Nanotechnology; 2009 Nov; 20(47):475702. PubMed ID: 19858553
[TBL] [Abstract][Full Text] [Related]
8. Logic gates and computation from assembled nanowire building blocks.
Huang Y; Duan X; Cui Y; Lauhon LJ; Kim KH; Lieber CM
Science; 2001 Nov; 294(5545):1313-7. PubMed ID: 11701922
[TBL] [Abstract][Full Text] [Related]
9. Oxide-confined formation of germanium nanowire heterostructures for high-performance transistors.
Tang J; Wang CY; Xiu F; Lang M; Chu LW; Tsai CJ; Chueh YL; Chen LJ; Wang KL
ACS Nano; 2011 Jul; 5(7):6008-15. PubMed ID: 21699197
[TBL] [Abstract][Full Text] [Related]
10. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
Chang YK; Hong FC
Nanotechnology; 2009 May; 20(19):195302. PubMed ID: 19420638
[TBL] [Abstract][Full Text] [Related]
11. Molybdenum disulfide nanoflake-zinc oxide nanowire hybrid photoinverter.
Hosseini Shokouh SH; Pezeshki A; Ali Raza SR; Choi K; Min SW; Jeon PJ; Lee HS; Im S
ACS Nano; 2014 May; 8(5):5174-81. PubMed ID: 24717126
[TBL] [Abstract][Full Text] [Related]
12. The fabrication of ZnO nanowire field-effect transistors combining dielectrophoresis and hot-pressing.
Chang YK; Hong FC
Nanotechnology; 2009 Jun; 20(23):235202. PubMed ID: 19448287
[TBL] [Abstract][Full Text] [Related]
13. ZnO nanowire transistors.
Goldberger J; Sirbuly DJ; Law M; Yang P
J Phys Chem B; 2005 Jan; 109(1):9-14. PubMed ID: 16850973
[TBL] [Abstract][Full Text] [Related]
14. Top-gated silicon nanowire transistors in a single fabrication step.
Colli A; Tahraoui A; Fasoli A; Kivioja JM; Milne WI; Ferrari AC
ACS Nano; 2009 Jun; 3(6):1587-93. PubMed ID: 19425540
[TBL] [Abstract][Full Text] [Related]
15. Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons.
Yoon J; Hong WK; Jo M; Jo G; Choe M; Park W; Sohn JI; Nedic S; Hwang H; Welland ME; Lee T
ACS Nano; 2011 Jan; 5(1):558-64. PubMed ID: 21155534
[TBL] [Abstract][Full Text] [Related]
16. DC modeling and the source of flicker noise in passivated carbon nanotube transistors.
Kim S; Kim S; Janes DB; Mohammadi S; Back J; Shim M
Nanotechnology; 2010 Sep; 21(38):385203. PubMed ID: 20798468
[TBL] [Abstract][Full Text] [Related]
17. Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors.
Keem K; Jeong DY; Kim S; Lee MS; Yeo IS; Chung UI; Moon JT
Nano Lett; 2006 Jul; 6(7):1454-8. PubMed ID: 16834428
[TBL] [Abstract][Full Text] [Related]
18. Ferroelectric transistors with nanowire channel: toward nonvolatile memory applications.
Liao L; Fan HJ; Yan B; Zhang Z; Chen LL; Li BS; Xing GZ; Shen ZX; Wu T; Sun XW; Wang J; Yu T
ACS Nano; 2009 Mar; 3(3):700-6. PubMed ID: 19249845
[TBL] [Abstract][Full Text] [Related]
19. Top-gate ZnO nanowire transistors and integrated circuits with ultrathin self-assembled monolayer gate dielectric.
Kälblein D; Weitz RT; Böttcher HJ; Ante F; Zschieschang U; Kern K; Klauk H
Nano Lett; 2011 Dec; 11(12):5309-15. PubMed ID: 22029286
[TBL] [Abstract][Full Text] [Related]
20. High-performance ZnO nanowire transistors with aluminum top-gate electrodes and naturally formed hybrid self-assembled monolayer/AlO(x) gate dielectric.
Kälblein D; Ryu H; Ante F; Fenk B; Hahn K; Kern K; Klauk H
ACS Nano; 2014 Jul; 8(7):6840-8. PubMed ID: 24940627
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
