These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

125 related articles for article (PubMed ID: 20564252)

  • 1. Electricity generation based on one-dimensional group-III nitride nanomaterials.
    Wang X; Song J; Zhang F; He C; Hu Z; Wang Z
    Adv Mater; 2010 May; 22(19):2155-8. PubMed ID: 20564252
    [No Abstract]   [Full Text] [Related]  

  • 2. Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.
    Lin BC; Chen KJ; Wang CH; Chiu CH; Lan YP; Lin CC; Lee PT; Shih MH; Kuo YK; Kuo HC
    Opt Express; 2014 Jan; 22(1):463-9. PubMed ID: 24515006
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Current development and patents on high-brightness white LED for illumination.
    Pang WY; Lo I; Hsieh CH; Hsu YC; Chou MC; Shih CH
    Recent Pat Nanotechnol; 2010 Jan; 4(1):32-40. PubMed ID: 20214653
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Electronic Biosensors Based on III-Nitride Semiconductors.
    Kirste R; Rohrbaugh N; Bryan I; Bryan Z; Collazo R; Ivanisevic A
    Annu Rev Anal Chem (Palo Alto Calif); 2015; 8():149-69. PubMed ID: 26048553
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Epitaxial growth of InGaN nanowire arrays for light emitting diodes.
    Hahn C; Zhang Z; Fu A; Wu CH; Hwang YJ; Gargas DJ; Yang P
    ACS Nano; 2011 May; 5(5):3970-6. PubMed ID: 21495684
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Integrated semiconductor nanocrystal and epitaxical nanostructure systems: structural and optical behavior.
    Madhukar A; Lu S; Konkar A; Zhang Y; Ho M; Hughes SM; Alivisatos AP
    Nano Lett; 2005 Mar; 5(3):479-82. PubMed ID: 15755098
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.
    Konkar A; Lu S; Madhukar A; Hughes SM; Alivisatos AP
    Nano Lett; 2005 May; 5(5):969-73. PubMed ID: 15884904
    [TBL] [Abstract][Full Text] [Related]  

  • 8. A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode.
    Chen LC; Wang CK; Huang JB; Hong LS
    Nanotechnology; 2009 Feb; 20(8):085303. PubMed ID: 19417447
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Self-directed growth of AlGaAs core-shell nanowires for visible light applications.
    Chen C; Shehata S; Fradin C; LaPierre R; Couteau C; Weihs G
    Nano Lett; 2007 Sep; 7(9):2584-9. PubMed ID: 17696557
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Synthesis and patterning of gold nanostructures on InP and GaAs via galvanic displacement.
    Hormozi Nezhad MR; Aizawa M; Porter LA; Ribbe AE; Buriak JM
    Small; 2005 Nov; 1(11):1076-81. PubMed ID: 17193399
    [No Abstract]   [Full Text] [Related]  

  • 11. Atomic mobility in nanostructured liquid Ga-In alloy.
    Charnaya EV; Tien C; Lee MK; Kumzerov YA
    J Phys Condens Matter; 2010 May; 22(19):195108. PubMed ID: 21386452
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Fabrication and characterization of three-dimensional InGaAs/GaAs nanosprings.
    Bell DJ; Dong L; Nelson BJ; Golling M; Zhang L; Grützmacher D
    Nano Lett; 2006 Apr; 6(4):725-9. PubMed ID: 16608272
    [TBL] [Abstract][Full Text] [Related]  

  • 13. The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes.
    Jang HW; Ryu SW; Yu HK; Lee S; Lee JL
    Nanotechnology; 2010 Jan; 21(2):025203. PubMed ID: 19955615
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber.
    Tsukamoto S; Honma T; Bell GR; Ishii A; Arakawa Y
    Small; 2006 Mar; 2(3):386-9. PubMed ID: 17193056
    [No Abstract]   [Full Text] [Related]  

  • 15. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.
    Wei T; Kong Q; Wang J; Li J; Zeng Y; Wang G; Li J; Liao Y; Yi F
    Opt Express; 2011 Jan; 19(2):1065-71. PubMed ID: 21263645
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Built-in electric field minimization in (In, Ga)N nanoheterostructures.
    Liang Z; Wildeson IH; Colby R; Ewoldt DA; Zhang T; Sands TD; Stach EA; Benes B; García RE
    Nano Lett; 2011 Nov; 11(11):4515-9. PubMed ID: 21942457
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Hole subbands in freestanding nanowires: six-band versus eight-band k·p modelling.
    Ravi Kishore VV; Čukarić N; Partoens B; Tadić M; Peeters FM
    J Phys Condens Matter; 2012 Apr; 24(13):135302. PubMed ID: 22392836
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Carbohydrate-bearing 3-hydroxy-4-pyridinonato complexes of gallium(III) and indium(III).
    Green DE; Ferreira CL; Stick RV; Patrick BO; Adam MJ; Orvig C
    Bioconjug Chem; 2005; 16(6):1597-609. PubMed ID: 16287260
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effective mobility enhancement by using nanometer dot doping in amorphous IGZO thin-film transistors.
    Zan HW; Tsai WW; Chen CH; Tsai CC
    Adv Mater; 2011 Oct; 23(37):4237-42. PubMed ID: 21833994
    [No Abstract]   [Full Text] [Related]  

  • 20. Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires.
    Belloeil M; Gayral B; Daudin B
    Nano Lett; 2016 Feb; 16(2):960-6. PubMed ID: 26785291
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.