These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

153 related articles for article (PubMed ID: 20588958)

  • 41. Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.
    Lee YJ; Yang ZP; Chen PG; Hsieh YA; Yao YC; Liao MH; Lee MH; Wang MT; Hwang JM
    Opt Express; 2014 Oct; 22 Suppl 6():A1589-95. PubMed ID: 25607316
    [TBL] [Abstract][Full Text] [Related]  

  • 42. Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes.
    Zhao Y; Yan Q; Feezell D; Fujito K; Van de Walle CG; Speck JS; DenBaars SP; Nakamura S
    Opt Express; 2013 Jan; 21 Suppl 1():A53-9. PubMed ID: 23389275
    [TBL] [Abstract][Full Text] [Related]  

  • 43. High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).
    Koester R; Sager D; Quitsch WA; Pfingsten O; Poloczek A; Blumenthal S; Keller G; Prost W; Bacher G; Tegude FJ
    Nano Lett; 2015 Apr; 15(4):2318-23. PubMed ID: 25758029
    [TBL] [Abstract][Full Text] [Related]  

  • 44. Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer.
    Zhang L; Li Q; Shang L; Wang F; Qu C; Zhao F
    Opt Express; 2013 Jul; 21(14):16578-83. PubMed ID: 23938509
    [TBL] [Abstract][Full Text] [Related]  

  • 45. UV light emission from GZO/ZnO/GaN heterojunction diodes with carrier confinement layers.
    Ke MY; Lu TC; Yang SC; Chen CP; Cheng YW; Chen LY; Chen CY; He JH; Huang J
    Opt Express; 2009 Dec; 17(25):22912-7. PubMed ID: 20052218
    [TBL] [Abstract][Full Text] [Related]  

  • 46. Surface-plasmon-enhanced light emitters based on InGaN quantum wells.
    Okamoto K; Niki I; Shvartser A; Narukawa Y; Mukai T; Scherer A
    Nat Mater; 2004 Sep; 3(9):601-5. PubMed ID: 15322535
    [TBL] [Abstract][Full Text] [Related]  

  • 47. Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.
    Jia C; Yu T; Lu H; Zhong C; Sun Y; Tong Y; Zhang G
    Opt Express; 2013 Apr; 21(7):8444-9. PubMed ID: 23571934
    [TBL] [Abstract][Full Text] [Related]  

  • 48. Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs.
    Römer F; Witzigmann B
    Opt Express; 2014 Oct; 22 Suppl 6():A1440-52. PubMed ID: 25607301
    [TBL] [Abstract][Full Text] [Related]  

  • 49. Size dependence of silica nanospheres embedded in 385 nm ultraviolet light-emitting diodes on a far-field emission pattern.
    Park YJ; Han N; Ryu BD; Han M; Ko KB; Cuong TV; Cho J; Suh EK; Hong CH
    Opt Express; 2014 Oct; 22 Suppl 6():A1553-8. PubMed ID: 25607312
    [TBL] [Abstract][Full Text] [Related]  

  • 50. Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN.
    Cho CY; Kwon MK; Lee SJ; Han SH; Kang JW; Kang SE; Lee DY; Park SJ
    Nanotechnology; 2010 May; 21(20):205201. PubMed ID: 20413842
    [TBL] [Abstract][Full Text] [Related]  

  • 51. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells.
    Park H; Baik KH; Kim J; Ren F; Pearton SJ
    Opt Express; 2013 May; 21(10):12908-13. PubMed ID: 23736510
    [TBL] [Abstract][Full Text] [Related]  

  • 52. Room temperature polariton light emitting diode with integrated tunnel junction.
    Brodbeck S; Jahn JP; Rahimi-Iman A; Fischer J; Amthor M; Reitzenstein S; Kamp M; Schneider C; Höfling S
    Opt Express; 2013 Dec; 21(25):31098-104. PubMed ID: 24514684
    [TBL] [Abstract][Full Text] [Related]  

  • 53. Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures.
    Ee YK; Kumnorkaew P; Arif RA; Tong H; Gilchrist JF; Tansu N
    Opt Express; 2009 Aug; 17(16):13747-57. PubMed ID: 19654782
    [TBL] [Abstract][Full Text] [Related]  

  • 54. Highly efficient inverted top-emitting organic light-emitting diodes using a lead monoxide electron injection layer.
    Wang Q; Deng Z; Ma D
    Opt Express; 2009 Sep; 17(20):17269-78. PubMed ID: 19907513
    [TBL] [Abstract][Full Text] [Related]  

  • 55. Light extraction enhancement for InGaN/GaN LED by three dimensional auto-cloned photonics crystal.
    Huang CY; Ku HM; Chao S
    Opt Express; 2009 Dec; 17(26):23702-11. PubMed ID: 20052081
    [TBL] [Abstract][Full Text] [Related]  

  • 56. 2D SiNx photonic crystal coated Y3Al5O12:Ce3+ ceramic plate phosphor for high-power white light-emitting diodes.
    Park HK; Oh JR; Do YR
    Opt Express; 2011 Dec; 19(25):25593-601. PubMed ID: 22273952
    [TBL] [Abstract][Full Text] [Related]  

  • 57. Solution-processed single-emitting-layer white organic light-emitting diodes based on small molecules with efficiency/CRI/color-stability trade-off.
    Fu Q; Chen J; Zhang H; Shi C; Ma D
    Opt Express; 2013 May; 21(9):11078-85. PubMed ID: 23669963
    [TBL] [Abstract][Full Text] [Related]  

  • 58. Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes.
    Zhang Y; Xie H; Zheng H; Wei T; Yang H; Li J; Yi X; Song X; Wang G; Li J
    Opt Express; 2012 Mar; 20(6):6808-15. PubMed ID: 22418563
    [TBL] [Abstract][Full Text] [Related]  

  • 59. Spectral conversion with fluorescent microspheres for light emitting diodes.
    Hui KN; Lai PT; Choi HW
    Opt Express; 2008 Jan; 16(1):13-8. PubMed ID: 18521128
    [TBL] [Abstract][Full Text] [Related]  

  • 60. Innovational radiation sensor by integrating AL2O3:C optically stimulated luminescent dosemeter and GaN detectors.
    Chen TC; Poochinda K; Stoebe TG
    Radiat Prot Dosimetry; 2006; 119(1-4):380-5. PubMed ID: 16731691
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 8.