These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
311 related articles for article (PubMed ID: 20601753)
41. Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells. Hsu HP; Sitarek P; Huang YS; Liu PW; Lin JM; Lin HH; Tiong KK J Phys Condens Matter; 2006 Jul; 18(26):5927-35. PubMed ID: 21690808 [TBL] [Abstract][Full Text] [Related]
42. Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate. Bennour M; Saidi F; Bouzaïene L; Sfaxi L; Maaref H J Appl Phys; 2012 Jan; 111(2):24310-243107. PubMed ID: 22396623 [TBL] [Abstract][Full Text] [Related]
43. Effect of formation temperature and roughness on surface potential of octadecyltrichlorosilane self-assembled monolayer on silicon surfaces. Bush BG; DelRio FW; Opatkiewicz J; Maboudian R; Carraro C J Phys Chem A; 2007 Dec; 111(49):12339-43. PubMed ID: 17994712 [TBL] [Abstract][Full Text] [Related]
44. The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100). Hakkarainen TV; Polojärvi V; Schramm A; Tommila J; Guina M Nanotechnology; 2012 Mar; 23(11):115702. PubMed ID: 22369789 [TBL] [Abstract][Full Text] [Related]
45. Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy. Mano T; Abbarchi M; Kuroda T; Mastrandrea CA; Vinattieri A; Sanguinetti S; Sakoda K; Gurioli M Nanotechnology; 2009 Sep; 20(39):395601. PubMed ID: 19724114 [TBL] [Abstract][Full Text] [Related]
46. Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots. Reyes DF; González D; Ulloa JM; Sales DL; Dominguez L; Mayoral A; Hierro A Nanoscale Res Lett; 2012 Nov; 7(1):653. PubMed ID: 23181950 [TBL] [Abstract][Full Text] [Related]
47. Shape control of InGaAs nanostructures on nominal GaAs(001): dashes and dots. Kim DJ; Yang H Nanotechnology; 2008 Nov; 19(47):475601. PubMed ID: 21836276 [TBL] [Abstract][Full Text] [Related]
48. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers. Tang M; Chen S; Wu J; Jiang Q; Dorogan VG; Benamara M; Mazur YI; Salamo GJ; Seeds A; Liu H Opt Express; 2014 May; 22(10):11528-35. PubMed ID: 24921274 [TBL] [Abstract][Full Text] [Related]
49. Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer. Oh HJ; Park SJ; Lim JY; Cho NK; Song JD; Lee W; Lee YJ; Myoung JM; Choi WJ J Nanosci Nanotechnol; 2014 Apr; 14(4):2984-9. PubMed ID: 24734721 [TBL] [Abstract][Full Text] [Related]
50. Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics. Tasco V; Usman M; De Giorgi M; Passaseo A Nanotechnology; 2014 Feb; 25(5):055207. PubMed ID: 24407042 [TBL] [Abstract][Full Text] [Related]
51. Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer. Jo M; Mano T; Sakoda K Nanotechnology; 2011 Aug; 22(33):335201. PubMed ID: 21775803 [TBL] [Abstract][Full Text] [Related]
52. Single site-controlled In(Ga)As/GaAs quantum dots: growth, properties and device integration. Schneider C; Huggenberger A; Sünner T; Heindel T; Strauss M; Göpfert S; Weinmann P; Reitzenstein S; Worschech L; Kamp M; Höfling S; Forchel A Nanotechnology; 2009 Oct; 20(43):434012. PubMed ID: 19801767 [TBL] [Abstract][Full Text] [Related]
53. Self-assembled monolayers of alkanethiols on InAs. Petrovykh DY; Smith JC; Clark TD; Stine R; Baker LA; Whitman LJ Langmuir; 2009 Oct; 25(20):12185-94. PubMed ID: 19778053 [TBL] [Abstract][Full Text] [Related]
54. Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface. Liang BL; Wong PS; Pavarelli N; Tatebayashi J; Ochalski TJ; Huyet G; Huffaker DL Nanotechnology; 2011 Feb; 22(5):055706. PubMed ID: 21178233 [TBL] [Abstract][Full Text] [Related]
55. Effects of applied magnetic fields and hydrostatic pressure on the optical transitions in self-assembled InAs/GaAs quantum dots. Duque CA; Porras-Montenegro N; Barticevic Z; Pacheco M; Oliveira LE J Phys Condens Matter; 2006 Feb; 18(6):1877-84. PubMed ID: 21697562 [TBL] [Abstract][Full Text] [Related]
57. Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structure. Wong PS; Liang BL; Dorogan VG; Albrecht AR; Tatebayashi J; He X; Nuntawong N; Mazur YI; Salamo GJ; Brueck SR; Huffaker DL Nanotechnology; 2008 Oct; 19(43):435710. PubMed ID: 21832714 [TBL] [Abstract][Full Text] [Related]
58. An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots. Qiu F; Qiu W; Li Y; Wang X; Zhang Y; Zhou X; Lv Y; Sun Y; Deng H; Hu S; Dai N; Wang C; Yang Y; Zhuang Q; Hayne M; Krier A Nanotechnology; 2016 Feb; 27(6):065602. PubMed ID: 26684716 [TBL] [Abstract][Full Text] [Related]
59. Spin polarization of neutral excitons in quantum dots: the role of the carrier collection area. Moskalenko E; Larsson A; Holtz PO Nanotechnology; 2010 Aug; 21(34):345401. PubMed ID: 20671363 [TBL] [Abstract][Full Text] [Related]
60. Various Quantum- and Nano-Structures by III-V Droplet Epitaxy on GaAs Substrates. Lee J; Wang ZhM; Kim E; Kim N; Park Sh; Salamo G Nanoscale Res Lett; 2009 Nov; 5(2):308-14. PubMed ID: 20671787 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]