276 related articles for article (PubMed ID: 20721034)
1. High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm.
Joo J; Kim S; Kim IG; Jang KS; Kim G
Opt Express; 2010 Aug; 18(16):16474-9. PubMed ID: 20721034
[TBL] [Abstract][Full Text] [Related]
2. Multi-channel silicon photonic receiver based on ring-resonators.
Fang Q; Phang YT; Tan CW; Liow TY; Yu MB; Lo GQ; Kwong DL
Opt Express; 2010 Jun; 18(13):13510-5. PubMed ID: 20588481
[TBL] [Abstract][Full Text] [Related]
3. 30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide.
Feng NN; Feng D; Liao S; Wang X; Dong P; Liang H; Kung CC; Qian W; Fong J; Shafiiha R; Luo Y; Cunningham J; Krishnamoorthy AV; Asghari M
Opt Express; 2011 Apr; 19(8):7062-7. PubMed ID: 21503018
[TBL] [Abstract][Full Text] [Related]
4. Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.
Vivien L; Polzer A; Marris-Morini D; Osmond J; Hartmann JM; Crozat P; Cassan E; Kopp C; Zimmermann H; Fédéli JM
Opt Express; 2012 Jan; 20(2):1096-101. PubMed ID: 22274455
[TBL] [Abstract][Full Text] [Related]
5. High-performance photoreceivers based on vertical-illumination type Ge-on-Si photodetectors operating up to 43 Gb/s at λ~1550nm.
Kim IG; Jang KS; Joo J; Kim S; Kim S; Choi KS; Oh JH; Kim SA; Kim G
Opt Express; 2013 Dec; 21(25):30718-25. PubMed ID: 24514647
[TBL] [Abstract][Full Text] [Related]
6. Strained germanium thin film membrane on silicon substrate for optoelectronics.
Nam D; Sukhdeo D; Roy A; Balram K; Cheng SL; Huang KC; Yuan Z; Brongersma M; Nishi Y; Miller D; Saraswat K
Opt Express; 2011 Dec; 19(27):25866-72. PubMed ID: 22274174
[TBL] [Abstract][Full Text] [Related]
7. Room-temperature electroluminescence from Si microdisks with Ge quantum dots.
Xia J; Takeda Y; Usami N; Maruizumi T; Shiraki Y
Opt Express; 2010 Jun; 18(13):13945-50. PubMed ID: 20588527
[TBL] [Abstract][Full Text] [Related]
8. Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides.
Feng NN; Dong P; Zheng D; Liao S; Liang H; Shafiiha R; Feng D; Li G; Cunningham JE; Krishnamoorthy AV; Asghari M
Opt Express; 2010 Jan; 18(1):96-101. PubMed ID: 20173827
[TBL] [Abstract][Full Text] [Related]
9. WDM multi-channel silicon photonic receiver with 320 Gbps data transmission capability.
Fang Q; Liow TY; Song JF; Ang KW; Yu MB; Lo GQ; Kwong DL
Opt Express; 2010 Mar; 18(5):5106-13. PubMed ID: 20389523
[TBL] [Abstract][Full Text] [Related]
10. Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 microm light detection.
Kang Y; Zadka M; Litski S; Sarid G; Morse M; Paniccia MJ; Kuo YH; Bowers J; Beling A; Liu HD; McIntosh DC; Campbell J; Pauchard A
Opt Express; 2008 Jun; 16(13):9365-71. PubMed ID: 18575500
[TBL] [Abstract][Full Text] [Related]
11. 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator.
Chaisakul P; Marris-Morini D; Rouifed MS; Isella G; Chrastina D; Frigerio J; Le Roux X; Edmond S; Coudevylle JR; Vivien L
Opt Express; 2012 Jan; 20(3):3219-24. PubMed ID: 22330559
[TBL] [Abstract][Full Text] [Related]
12. An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.
Youn JS; Lee MJ; Park KY; Rücker H; Choi WY
Opt Express; 2012 Dec; 20(27):28153-62. PubMed ID: 23263050
[TBL] [Abstract][Full Text] [Related]
13. High efficiency thin-film crystalline Si/Ge tandem solar cell.
Sun G; Chang F; Soref RA
Opt Express; 2010 Feb; 18(4):3746-53. PubMed ID: 20389384
[TBL] [Abstract][Full Text] [Related]
14. GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz.
Oehme M; Kostecki K; Ye K; Bechler S; Ulbricht K; Schmid M; Kaschel M; Gollhofer M; Körner R; Zhang W; Kasper E; Schulze J
Opt Express; 2014 Jan; 22(1):839-46. PubMed ID: 24515043
[TBL] [Abstract][Full Text] [Related]
15. High efficiency germanium-assisted grating coupler.
Yang S; Zhang Y; Baehr-Jones T; Hochberg M
Opt Express; 2014 Dec; 22(25):30607-12. PubMed ID: 25607008
[TBL] [Abstract][Full Text] [Related]
16. Si/Ge uni-traveling carrier photodetector.
Piels M; Bowers JE
Opt Express; 2012 Mar; 20(7):7488-95. PubMed ID: 22453428
[TBL] [Abstract][Full Text] [Related]
17. Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product.
Zaoui WS; Chen HW; Bowers JE; Kang Y; Morse M; Paniccia MJ; Pauchard A; Campbell JC
Opt Express; 2009 Jul; 17(15):12641-9. PubMed ID: 19654668
[TBL] [Abstract][Full Text] [Related]
18. 36 GHz submicron silicon waveguide germanium photodetector.
Liao S; Feng NN; Feng D; Dong P; Shafiiha R; Kung CC; Liang H; Qian W; Liu Y; Fong J; Cunningham JE; Luo Y; Asghari M
Opt Express; 2011 May; 19(11):10967-72. PubMed ID: 21643357
[TBL] [Abstract][Full Text] [Related]
19. A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor.
Hu Y; Churchill HO; Reilly DJ; Xiang J; Lieber CM; Marcus CM
Nat Nanotechnol; 2007 Oct; 2(10):622-5. PubMed ID: 18654386
[TBL] [Abstract][Full Text] [Related]
20. 42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide.
Vivien L; Osmond J; Fédéli JM; Marris-Morini D; Crozat P; Damlencourt JF; Cassan E; Lecunff Y; Laval S
Opt Express; 2009 Apr; 17(8):6252-7. PubMed ID: 19365450
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]