These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

140 related articles for article (PubMed ID: 20852638)

  • 1. Direct observation of single-charge-detection capability of nanowire field-effect transistors.
    Salfi J; Savelyev IG; Blumin M; Nair SV; Ruda HE
    Nat Nanotechnol; 2010 Oct; 5(10):737-41. PubMed ID: 20852638
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Nonlinear Chemical Sensitivity Enhancement of Nanowires in the Ultralow Concentration Regime.
    Lynall D; Tseng AC; Nair SV; Savelyev IG; Blumin M; Wang S; Wang ZM; Ruda HE
    ACS Nano; 2020 Jan; 14(1):964-973. PubMed ID: 31904218
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Carrier transport in high mobility InAs nanowire junctionless transistors.
    Konar A; Mathew J; Nayak K; Bajaj M; Pandey RK; Dhara S; Murali KV; Deshmukh MM
    Nano Lett; 2015 Mar; 15(3):1684-90. PubMed ID: 25658044
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors.
    Tseng AC; Lynall D; Savelyev I; Blumin M; Wang S; Ruda HE
    Sensors (Basel); 2017 Jul; 17(7):. PubMed ID: 28714903
    [TBL] [Abstract][Full Text] [Related]  

  • 5. An air gap moderates the performance of nanowire array transistors.
    Yang T; Mehta JS; Mativetsky JM
    Nanotechnology; 2017 Mar; 28(12):125204. PubMed ID: 28170350
    [TBL] [Abstract][Full Text] [Related]  

  • 6. A radio frequency single-electron transistor based on an InAs/InP heterostructure nanowire.
    Nilsson HA; Duty T; Abay S; Wilson C; Wagner JB; Thelander C; Delsing P; Samuelson L
    Nano Lett; 2008 Mar; 8(3):872-5. PubMed ID: 18302328
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors.
    Lan C; Yip S; Kang X; Meng Y; Bu X; Ho JC
    ACS Appl Mater Interfaces; 2020 Dec; 12(50):56330-56337. PubMed ID: 33287538
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.
    Dey AW; Svensson J; Ek M; Lind E; Thelander C; Wernersson LE
    Nano Lett; 2013; 13(12):5919-24. PubMed ID: 24224956
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor.
    Takase K; Ashikawa Y; Zhang G; Tateno K; Sasaki S
    Sci Rep; 2017 Apr; 7(1):930. PubMed ID: 28424473
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Donor deactivation in silicon nanostructures.
    Björk MT; Schmid H; Knoch J; Riel H; Riess W
    Nat Nanotechnol; 2009 Feb; 4(2):103-7. PubMed ID: 19197312
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Gate coupling and charge distribution in nanowire field effect transistors.
    Khanal DR; Wu J
    Nano Lett; 2007 Sep; 7(9):2778-83. PubMed ID: 17718588
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Nanowire Transistors with Bound-Charge Engineering.
    Prentki RJ; Harb M; Liu L; Guo H
    Phys Rev Lett; 2020 Dec; 125(24):247704. PubMed ID: 33412033
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Enabling Multifunctional Organic Transistors with Fine-Tuned Charge Transport.
    Di CA; Shen H; Zhang F; Zhu D
    Acc Chem Res; 2019 Apr; 52(4):1113-1124. PubMed ID: 30908012
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Surface State Dynamics Dictating Transport in InAs Nanowires.
    Lynall D; Nair SV; Gutstein D; Shik A; Savelyev IG; Blumin M; Ruda HE
    Nano Lett; 2018 Feb; 18(2):1387-1395. PubMed ID: 29345949
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Tracking Cation Exchange in Individual Nanowires
    Lengle D; Schwarz M; Patjens S; Stuckelberger ME; Ruhmlieb C; Mews A; Dorn A
    ACS Nano; 2024 Jul; 18(27):18036-18045. PubMed ID: 38916252
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires.
    Gutstein D; Lynall D; Nair SV; Savelyev I; Blumin M; Ercolani D; Ruda HE
    Nano Lett; 2018 Jan; 18(1):124-129. PubMed ID: 29216432
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Surface Properties from Transconductance in Nanoscale Systems.
    Lynall D; Byrne K; Shik A; Nair SV; Ruda HE
    Nano Lett; 2016 Oct; 16(10):6028-6035. PubMed ID: 27579852
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Impact of electrostatic doping on carrier concentration and mobility in InAs nanowires.
    Prete D; Demontis V; Zannier V; Rodriguez-Douton MJ; Guazzelli L; Beltram F; Sorba L; Rossella F
    Nanotechnology; 2021 Apr; 32(14):145204. PubMed ID: 33361570
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Temperature-dependent electron mobility in InAs nanowires.
    Gupta N; Song Y; Holloway GW; Sinha U; Haapamaki CM; Lapierre RR; Baugh J
    Nanotechnology; 2013 Jun; 24(22):225202. PubMed ID: 23633474
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Giant thermovoltage in single InAs nanowire field-effect transistors.
    Roddaro S; Ercolani D; Safeen MA; Suomalainen S; Rossella F; Giazotto F; Sorba L; Beltram F
    Nano Lett; 2013 Aug; 13(8):3638-42. PubMed ID: 23869467
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.