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11. Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering. Ding L; Wang Z; Pei T; Zhang Z; Wang S; Xu H; Peng F; Li Y; Peng LM ACS Nano; 2011 Apr; 5(4):2512-9. PubMed ID: 21370813 [TBL] [Abstract][Full Text] [Related]
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