These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

274 related articles for article (PubMed ID: 20925406)

  • 1. Origins of hole doping and relevant optoelectronic properties of wide gap p-type semiconductor, LaCuOSe.
    Hiramatsu H; Kamiya T; Tohei T; Ikenaga E; Mizoguchi T; Ikuhara Y; Kobayashi K; Hosono H
    J Am Chem Soc; 2010 Oct; 132(42):15060-7. PubMed ID: 20925406
    [TBL] [Abstract][Full Text] [Related]  

  • 2. CsSnI3: Semiconductor or metal? High electrical conductivity and strong near-infrared photoluminescence from a single material. High hole mobility and phase-transitions.
    Chung I; Song JH; Im J; Androulakis J; Malliakas CD; Li H; Freeman AJ; Kenney JT; Kanatzidis MG
    J Am Chem Soc; 2012 May; 134(20):8579-87. PubMed ID: 22578072
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures.
    Simon J; Protasenko V; Lian C; Xing H; Jena D
    Science; 2010 Jan; 327(5961):60-4. PubMed ID: 20044569
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Enhanced p-type conductivity and band gap narrowing in heavily Al doped NiO thin films deposited by RF magnetron sputtering.
    Nandy S; Maiti UN; Ghosh CK; Chattopadhyay KK
    J Phys Condens Matter; 2009 Mar; 21(11):115804. PubMed ID: 21693930
    [TBL] [Abstract][Full Text] [Related]  

  • 5. N doping of TiO2(110): photoemission and density-functional studies.
    Nambu A; Graciani J; Rodriguez JA; Wu Q; Fujita E; Sanz JF
    J Chem Phys; 2006 Sep; 125(9):094706. PubMed ID: 16965104
    [TBL] [Abstract][Full Text] [Related]  

  • 6. n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route.
    Ran FY; Xiao Z; Toda Y; Hiramatsu H; Hosono H; Kamiya T
    Sci Rep; 2015 May; 5():10428. PubMed ID: 26020855
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Strong charge-transfer doping of 1 to 10 layer graphene by NO₂.
    Crowther AC; Ghassaei A; Jung N; Brus LE
    ACS Nano; 2012 Feb; 6(2):1865-75. PubMed ID: 22276666
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films.
    Jayasinghe RC; Lao YF; Perera AG; Hammar M; Cao CF; Wu HZ
    J Phys Condens Matter; 2012 Oct; 24(43):435803. PubMed ID: 23034428
    [TBL] [Abstract][Full Text] [Related]  

  • 9. New aspects of carrier multiplication in semiconductor nanocrystals.
    McGuire JA; Joo J; Pietryga JM; Schaller RD; Klimov VI
    Acc Chem Res; 2008 Dec; 41(12):1810-9. PubMed ID: 19006342
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Electronic structure of ternary palladates and effect of hole doping: a valence band photoemission spectroscopic study.
    Reddy BH; Ali A; Singh RS
    J Phys Condens Matter; 2021 Apr; 33(18):. PubMed ID: 33752182
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Dopant ion size and electronic structure effects on transparent conducting oxides. Sc-doped CdO thin films grown by MOCVD.
    Jin S; Yang Y; Medvedeva JE; Ireland JR; Metz AW; Ni J; Kannewurf CR; Freeman AJ; Marks TJ
    J Am Chem Soc; 2004 Oct; 126(42):13787-93. PubMed ID: 15493938
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Fermi level engineering of single-walled carbon nanotubes by AuCl3 doping.
    Kim KK; Bae JJ; Park HK; Kim SM; Geng HZ; Park KA; Shin HJ; Yoon SM; Benayad A; Choi JY; Lee YH
    J Am Chem Soc; 2008 Sep; 130(38):12757-61. PubMed ID: 18729358
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Electronic structure of A- and B-site doped lanthanum manganites: a combined X-ray spectroscopic study.
    Kuepper K; Falub MC; Prince KC; Galakhov VR; Troyanchuk IO; Chiuzbaian SG; Matteucci M; Wett D; Szargan R; Ovechkina NA; Mukovskii YM; Neumann M
    J Phys Chem B; 2005 May; 109(19):9354-61. PubMed ID: 16852120
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Tunable band gaps and p-type transport properties of boron-doped graphenes by controllable ion doping using reactive microwave plasma.
    Tang YB; Yin LC; Yang Y; Bo XH; Cao YL; Wang HE; Zhang WJ; Bello I; Lee ST; Cheng HM; Lee CS
    ACS Nano; 2012 Mar; 6(3):1970-8. PubMed ID: 22352710
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Stable hole doping of graphene for low electrical resistance and high optical transparency.
    Tongay S; Berke K; Lemaitre M; Nasrollahi Z; Tanner DB; Hebard AF; Appleton BR
    Nanotechnology; 2011 Oct; 22(42):425701. PubMed ID: 21934196
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Heavily doped semiconductor nanocrystal quantum dots.
    Mocatta D; Cohen G; Schattner J; Millo O; Rabani E; Banin U
    Science; 2011 Apr; 332(6025):77-81. PubMed ID: 21454783
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Electronic structure and transport in thermoelectric compounds AZn2Sb2 (A = Sr, Ca, Yb, Eu).
    Toberer ES; May AF; Melot BC; Flage-Larsen E; Snyder GJ
    Dalton Trans; 2010 Jan; 39(4):1046-54. PubMed ID: 20066190
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Evidence for suppressed screening on the surface of high temperature La(2-x)SrxCuO4 and Nd2(2-x)CexCuO4 superconductors.
    Taguchi M; Chainani A; Horiba K; Takata Y; Yabashi M; Tamasaku K; Nishino Y; Miwa D; Ishikawa T; Takeuchi T; Yamamoto K; Matsunami M; Shin S; Yokoya T; Ikenaga E; Kobayashi K; Mochiku T; Hirata K; Hori J; Ishii K; Nakamura F; Suzuki T
    Phys Rev Lett; 2005 Oct; 95(17):177002. PubMed ID: 16383858
    [TBL] [Abstract][Full Text] [Related]  

  • 19. NaBa2Cu3S5: a doped p-type degenerate semiconductor.
    Sturza M; Han F; Shoemaker DP; Malliakas CD; Chung DY; Jin H; Freeman AJ; Kanatzidis MG
    Inorg Chem; 2013 Jun; 52(12):7210-7. PubMed ID: 23731247
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Hole mobility on isolated chains of poly(3-hexylthiophene) by microwave conductivity measurement.
    Liu CY; Chen SA
    J Chem Phys; 2009 May; 130(20):204906. PubMed ID: 19485480
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 14.