These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

399 related articles for article (PubMed ID: 20940887)

  • 1. Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode.
    Sun G; Soref RA; Cheng HH
    Opt Express; 2010 Sep; 18(19):19957-65. PubMed ID: 20940887
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics.
    Fang YY; Xie J; Tolle J; Roucka R; D'Costa VR; Chizmeshya AV; Menendez J; Kouvetakis J
    J Am Chem Soc; 2008 Nov; 130(47):16095-102. PubMed ID: 19032100
    [TBL] [Abstract][Full Text] [Related]  

  • 3. GeSn/Ge heterostructure short-wave infrared photodetectors on silicon.
    Gassenq A; Gencarelli F; Van Campenhout J; Shimura Y; Loo R; Narcy G; Vincent B; Roelkens G
    Opt Express; 2012 Dec; 20(25):27297-303. PubMed ID: 23262679
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Quantum cascade laser gain enhancement by front facet illumination.
    Chen G; Bethea CG; Martini R
    Opt Express; 2009 Dec; 17(26):24282-7. PubMed ID: 20052139
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells.
    Claussen SA; Tasyurek E; Roth JE; Miller DA
    Opt Express; 2010 Dec; 18(25):25596-607. PubMed ID: 21164905
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Quantum-confined direct band transitions in tensile strained Ge/SiGe quantum wells on silicon substrates.
    Chen Y; Li C; Lai H; Chen S
    Nanotechnology; 2010 Mar; 21(11):115207. PubMed ID: 20179329
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells.
    Pizzi G; Virgilio M; Grosso G
    Nanotechnology; 2010 Feb; 21(5):055202. PubMed ID: 20023310
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.
    Al-Saigh R; Baira M; Salem B; Ilahi B
    Nanoscale Res Lett; 2018 Jun; 13(1):172. PubMed ID: 29882031
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Activation energy study of electron transport in high performance short wavelengths quantum cascade lasers.
    Pflügl C; Diehl L; Lyakh A; Wang QJ; Maulini R; Tsekoun A; Patel CK; Wang X; Capasso F
    Opt Express; 2010 Jan; 18(2):746-53. PubMed ID: 20173895
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Room-temperature electroluminescence from Si microdisks with Ge quantum dots.
    Xia J; Takeda Y; Usami N; Maruizumi T; Shiraki Y
    Opt Express; 2010 Jun; 18(13):13945-50. PubMed ID: 20588527
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Electroluminescence of GeSn/Ge MQW LEDs on Si substrate.
    Schwartz B; Oehme M; Kostecki K; Widmann D; Gollhofer M; Koerner R; Bechler S; Fischer IA; Wendav T; Kasper E; Schulze J; Kittler M
    Opt Lett; 2015 Jul; 40(13):3209-12. PubMed ID: 26125404
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.
    Conley BR; Mosleh A; Ghetmiri SA; Du W; Soref RA; Sun G; Margetis J; Tolle J; Naseem HA; Yu SQ
    Opt Express; 2014 Jun; 22(13):15639-52. PubMed ID: 24977823
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
    Lee A; Jiang Q; Tang M; Seeds A; Liu H
    Opt Express; 2012 Sep; 20(20):22181-7. PubMed ID: 23037366
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Composition-dependent band gaps and indirect-direct band gap transitions of group-IV semiconductor alloys.
    Zhu Z; Xiao J; Sun H; Hu Y; Cao R; Wang Y; Zhao L; Zhuang J
    Phys Chem Chem Phys; 2015 Sep; 17(33):21605-10. PubMed ID: 26222374
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform.
    Mączko HS; Kudrawiec R; Gladysiewicz M
    Sci Rep; 2016 Sep; 6():34082. PubMed ID: 27686056
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Ge-on-Si laser operating at room temperature.
    Liu J; Sun X; Camacho-Aguilera R; Kimerling LC; Michel J
    Opt Lett; 2010 Mar; 35(5):679-81. PubMed ID: 20195317
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing.
    Jain SR; Sysak MN; Kurczveil G; Bowers JE
    Opt Express; 2011 Jul; 19(14):13692-9. PubMed ID: 21747525
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Extended defect states of Ge/Si quantum dots using optical isothermal capacitance transient spectroscopy.
    Kwak DW; Park CJ; Lee YH; Kim WS; Cho HY
    Nanotechnology; 2009 Feb; 20(5):055201. PubMed ID: 19417338
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Ultrashort pulse generation from 1.56 µm mode-locked VECSEL at room temperature.
    Khadour A; Bouchoule S; Aubin G; Harmand JC; Decobert J; Oudar JL
    Opt Express; 2010 Sep; 18(19):19902-13. PubMed ID: 20940881
    [TBL] [Abstract][Full Text] [Related]  

  • 20. GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz.
    Oehme M; Kostecki K; Ye K; Bechler S; Ulbricht K; Schmid M; Kaschel M; Gollhofer M; Körner R; Zhang W; Kasper E; Schulze J
    Opt Express; 2014 Jan; 22(1):839-46. PubMed ID: 24515043
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 20.