These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

120 related articles for article (PubMed ID: 21034095)

  • 21. Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization.
    Greco G; Giannazzo F; Frazzetto A; Raineri V; Roccaforte F
    Nanoscale Res Lett; 2011 Feb; 6(1):132. PubMed ID: 21711655
    [TBL] [Abstract][Full Text] [Related]  

  • 22. High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage.
    Zhang Y; Li Y; Wang J; Shen Y; Du L; Li Y; Wang Z; Xu S; Zhang J; Hao Y
    Nanoscale Res Lett; 2020 May; 15(1):114. PubMed ID: 32436019
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy.
    Tanaka S; Aoyama K; Ichihashi M; Arai S; Honda Y; Sawaki N
    J Electron Microsc (Tokyo); 2007 Aug; 56(4):141-4. PubMed ID: 17962377
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Formation of quantum dots in GaN/AlGaN FETs.
    Otsuka T; Abe T; Kitada T; Ito N; Tanaka T; Nakahara K
    Sci Rep; 2020 Sep; 10(1):15421. PubMed ID: 32963267
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction.
    Sun T; Luo X; Wei J; Yang C; Zhang B
    Nanoscale Res Lett; 2020 Jul; 15(1):149. PubMed ID: 32676687
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Quantum capacitance of coupled two-dimensional electron gases.
    Balasubramanian K
    J Phys Condens Matter; 2021 Jun; 33(28):. PubMed ID: 33588395
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Nanoscale control of an interfacial metal-insulator transition at room temperature.
    Cen C; Thiel S; Hammerl G; Schneider CW; Andersen KE; Hellberg CS; Mannhart J; Levy J
    Nat Mater; 2008 Apr; 7(4):298-302. PubMed ID: 18311143
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Electric-field-induced shift in the threshold voltage in LaAlO3/SrTiO3 heterostructures.
    Kim SK; Kim SI; Lim H; Jeong DS; Kwon B; Baek SH; Kim JS
    Sci Rep; 2015 Jan; 5():8023. PubMed ID: 25620684
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Nanoporous GaN on
    Lee KJ; Nakazato Y; Chun J; Wen X; Meng C; Soman R; Noshin M; Chowdhury S
    Nanotechnology; 2022 Oct; 33(50):. PubMed ID: 36103775
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Exploring the electronic and mechanical properties of protein using conducting atomic force microscopy.
    Zhao J; Davis JJ; Sansom MS; Hung A
    J Am Chem Soc; 2004 May; 126(17):5601-9. PubMed ID: 15113232
    [TBL] [Abstract][Full Text] [Related]  

  • 31. AlGaN/GaN heterostructures for non-invasive cell electrophysiological measurements.
    Yu J; Jha SK; Xiao L; Liu Q; Wang P; Surya C; Yang M
    Biosens Bioelectron; 2007 Nov; 23(4):513-9. PubMed ID: 17766103
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Site-specific fabrication of nanoscale heterostructures: local chemical modification of GaN nanowires using electrochemical dip-pen nanolithography.
    Maynor BW; Li J; Lu C; Liu J
    J Am Chem Soc; 2004 May; 126(20):6409-13. PubMed ID: 15149238
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice.
    Bennett SE; Ulfig RM; Clifton PH; Kappers MJ; Barnard JS; Humphreys CJ; Oliver RA
    Ultramicroscopy; 2011 Feb; 111(3):207-11. PubMed ID: 21333858
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts.
    Mamor M
    J Phys Condens Matter; 2009 Aug; 21(33):335802. PubMed ID: 21828610
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Nanoscale electrical characterization of semiconducting polymer blends by conductive atomic force microscopy (C-AFM).
    Alexeev A; Loos J; Koetse MM
    Ultramicroscopy; 2006 Feb; 106(3):191-9. PubMed ID: 16125322
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.
    Chang TH; Xiong K; Park SH; Yuan G; Ma Z; Han J
    Sci Rep; 2017 Jul; 7(1):6360. PubMed ID: 28743988
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN.
    Zhou J; Do HB; De Souza MM
    ACS Appl Electron Mater; 2023 Jun; 5(6):3309-3315. PubMed ID: 37396055
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Direct evidence of barrier inhomogeneities at metal/AlGaN/GaN interfaces using nanoscopic electrical characterizations.
    Kumar A; Kapoor R; Garg M; Kumar V; Singh R
    Nanotechnology; 2017 Jun; 28(26):26LT02. PubMed ID: 28498825
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Si-C linked organic monolayers on crystalline silicon surfaces as alternative gate insulators.
    Faber EJ; de Smet LC; Olthuis W; Zuilhof H; Sudhölter EJ; Bergveld P; van den Berg A
    Chemphyschem; 2005 Oct; 6(10):2153-66. PubMed ID: 16208740
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Direct probing of solvent-induced charge degradation in polypropylene electret fibres via electrostatic force microscopy.
    Kim J; Jasper W; Hinestroza J
    J Microsc; 2007 Jan; 225(Pt 1):72-9. PubMed ID: 17286696
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 6.