These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

189 related articles for article (PubMed ID: 21068839)

  • 1. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors.
    Ko H; Takei K; Kapadia R; Chuang S; Fang H; Leu PW; Ganapathi K; Plis E; Kim HS; Chen SY; Madsen M; Ford AC; Chueh YL; Krishna S; Salahuddin S; Javey A
    Nature; 2010 Nov; 468(7321):286-9. PubMed ID: 21068839
    [TBL] [Abstract][Full Text] [Related]  

  • 2. III-V complementary metal-oxide-semiconductor electronics on silicon substrates.
    Nah J; Fang H; Wang C; Takei K; Lee MH; Plis E; Krishna S; Javey A
    Nano Lett; 2012 Jul; 12(7):3592-5. PubMed ID: 22694195
    [TBL] [Abstract][Full Text] [Related]  

  • 3. A soft lithographic approach to fabricate InAs nanowire field-effect transistors.
    Lee SH; Shin SH; Madsen M; Takei K; Nah J; Lee MH
    Sci Rep; 2018 Feb; 8(1):3204. PubMed ID: 29453402
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.
    Takei K; Madsen M; Fang H; Kapadia R; Chuang S; Kim HS; Liu CH; Plis E; Nah J; Krishna S; Chueh YL; Guo J; Javey A
    Nano Lett; 2012 Apr; 12(4):2060-6. PubMed ID: 22409386
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.
    Tanaka A; Choi W; Chen R; Dayeh SA
    Adv Mater; 2017 Oct; 29(38):. PubMed ID: 28833605
    [TBL] [Abstract][Full Text] [Related]  

  • 6. 1310 nm InAs quantum-dot microdisk lasers on SOI by hybrid epitaxy.
    Zhang B; Wei WQ; Wang JH; Zhang JY; Cong H; Feng Q; Wang T; Zhang JJ
    Opt Express; 2019 Jul; 27(14):19348-19358. PubMed ID: 31503695
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications.
    Geum DM; Park MS; Lim JY; Yang HD; Song JD; Kim CZ; Yoon E; Kim S; Choi WJ
    Sci Rep; 2016 Feb; 6():20610. PubMed ID: 26864968
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.
    Kilpi OP; Svensson J; Wu J; Persson AR; Wallenberg R; Lind E; Wernersson LE
    Nano Lett; 2017 Oct; 17(10):6006-6010. PubMed ID: 28873310
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers.
    Hu Y; Bu L; Wang X; Zhou L; Lu G
    ACS Appl Mater Interfaces; 2018 Nov; 10(45):39091-39099. PubMed ID: 30350936
    [TBL] [Abstract][Full Text] [Related]  

  • 10. An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor.
    Moghadam RM; Xiao Z; Ahmadi-Majlan K; Grimley ED; Bowden M; Ong PV; Chambers SA; Lebeau JM; Hong X; Sushko PV; Ngai JH
    Nano Lett; 2017 Oct; 17(10):6248-6257. PubMed ID: 28876941
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Selective-Area Growth of InAs Nanowires on Ge and Vertical Transistor Application.
    Tomioka K; Izhizaka F; Fukui T
    Nano Lett; 2015 Nov; 15(11):7253-7. PubMed ID: 26468962
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Room-temperature quantum confinement effects in transport properties of ultrathin Si nanowire field-effect transistors.
    Yi KS; Trivedi K; Floresca HC; Yuk H; Hu W; Kim MJ
    Nano Lett; 2011 Dec; 11(12):5465-70. PubMed ID: 22112200
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.
    Liu Y; Niu J; Wang H; Han G; Zhang C; Feng Q; Zhang J; Hao Y
    Nanoscale Res Lett; 2017 Dec; 12(1):120. PubMed ID: 28228005
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Gate-controlled spin-orbit interaction in inas high-electron mobility transistor layers epitaxially transferred onto Si substrates.
    Kim KH; Um DS; Lee H; Lim S; Chang J; Koo HC; Oh MW; Ko H; Kim HJ
    ACS Nano; 2013 Oct; 7(10):9106-14. PubMed ID: 24016184
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.
    Lin YC; Lu KC; Wu WW; Bai J; Chen LJ; Tu KN; Huang Y
    Nano Lett; 2008 Mar; 8(3):913-8. PubMed ID: 18266331
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Atomically flat and uniform relaxed III-V epitaxial films on silicon substrate for heterogeneous and hybrid integration.
    Holland M; van Dal M; Duriez B; Oxland R; Vellianitis G; Doornbos G; Afzalian A; Chen TK; Hsieh CH; Ramvall P; Vasen T; Yeo YC; Passlack M
    Sci Rep; 2017 Nov; 7(1):14632. PubMed ID: 29116157
    [TBL] [Abstract][Full Text] [Related]  

  • 17. A Feasible Alternative to FDSOI and FinFET: Optimization of W/La
    Mah SK; Ker PJ; Ahmad I; Zainul Abidin NF; Ali Gamel MM
    Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34640118
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Effect of Microwave Annealing on the Interface Properties Between the Top Silicon and Buried Oxide Layers in Silicon-on-Insulator MOSFETs.
    Lee GY; Cho WJ
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6043-6049. PubMed ID: 31026905
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed.
    Hu Y; Xiang J; Liang G; Yan H; Lieber CM
    Nano Lett; 2008 Mar; 8(3):925-30. PubMed ID: 18251518
    [TBL] [Abstract][Full Text] [Related]  

  • 20. III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si.
    Svensson J; Dey AW; Jacobsson D; Wernersson LE
    Nano Lett; 2015 Dec; 15(12):7898-904. PubMed ID: 26595174
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.