These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

230 related articles for article (PubMed ID: 21137871)

  • 21. Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments.
    Chen KH; Tsai TM; Cheng CM; Huang SJ; Chang KC; Liang SP; Young TF
    Materials (Basel); 2017 Dec; 11(1):. PubMed ID: 29283368
    [TBL] [Abstract][Full Text] [Related]  

  • 22. A flexible nonvolatile resistive switching memory device based on ZnO film fabricated on a foldable PET substrate.
    Sun B; Zhang X; Zhou G; Yu T; Mao S; Zhu S; Zhao Y; Xia Y
    J Colloid Interface Sci; 2018 Jun; 520():19-24. PubMed ID: 29525500
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.
    Hu W; Zou L; Chen X; Qin N; Li S; Bao D
    ACS Appl Mater Interfaces; 2014 Apr; 6(7):5012-7. PubMed ID: 24635893
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits.
    R RK; Kalaboukhov A; Weng YC; Rathod KN; Johansson T; Lindblad A; Kamalakar MV; Sarkar T
    ACS Appl Mater Interfaces; 2024 Apr; 16(15):19225-19234. PubMed ID: 38579143
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Influence of homo buffer layer thickness on the quality of ZnO epilayers.
    Eid EA; Fouda AN
    Spectrochim Acta A Mol Biomol Spectrosc; 2015 Oct; 149():127-31. PubMed ID: 25950638
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures.
    Tominov RV; Vakulov ZE; Polupanov NV; Saenko AV; Avilov VI; Ageev OA; Smirnov VA
    Nanomaterials (Basel); 2022 Jan; 12(3):. PubMed ID: 35159799
    [TBL] [Abstract][Full Text] [Related]  

  • 27. A novel fabrication method for titania resistive switching device.
    Sun H; Chi Y; Zhu X; Zhong H; Peng G; Fang L
    J Nanosci Nanotechnol; 2010 Nov; 10(11):7142-4. PubMed ID: 21137883
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application.
    Chao CH; Wei DH
    J Vis Exp; 2015 Oct; (104):. PubMed ID: 26484561
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Low-Operating-Voltage Resistive Memory Based on Bi
    Li Z; Yang Z; Wu J; Zhou B; Bao Q; Zhang K; Zhao J; Wei J
    J Nanosci Nanotechnol; 2019 Jan; 19(1):231-234. PubMed ID: 30327028
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Ti-Doped GaO
    Park JH; Jeon DS; Kim TG
    ACS Appl Mater Interfaces; 2017 Dec; 9(49):43336-43342. PubMed ID: 29139293
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.
    Li Y; Long S; Lv H; Liu Q; Wang Y; Zhang S; Lian W; Wang M; Zhang K; Xie H; Liu S; Liu M
    Nanotechnology; 2011 Jun; 22(25):254028. PubMed ID: 21572216
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering.
    Singh S; Chakrabarti P
    J Nanosci Nanotechnol; 2012 Mar; 12(3):1880-5. PubMed ID: 22754993
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films.
    Chiu FC; Li PW; Chang WY
    Nanoscale Res Lett; 2012 Mar; 7(1):178. PubMed ID: 22401297
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing.
    Xu H; Wu C; Xiahou Z; Jung R; Li Y; Liu C
    Nanoscale Res Lett; 2017 Dec; 12(1):176. PubMed ID: 28282975
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Thin film deposition of metal oxides in resistance switching devices: electrode material dependence of resistance switching in manganite films.
    Nakamura T; Homma K; Tachibana K
    Nanoscale Res Lett; 2013 Feb; 8(1):76. PubMed ID: 23414549
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid.
    Oh SI; Rani JR; Hong SM; Jang JH
    Nanoscale; 2017 Oct; 9(40):15314-15322. PubMed ID: 28820212
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films.
    Ahn Y; Shin HW; Lee TH; Kim WH; Son JY
    Nanoscale; 2018 Jul; 10(28):13443-13448. PubMed ID: 29972166
    [TBL] [Abstract][Full Text] [Related]  

  • 38. [Photoluminescence of Silicon Nitride-Based ZnO Thin Film Developed with RF Magnetron Sputtering].
    Chen JH; Yao WQ; Zhu YF
    Guang Pu Xue Yu Guang Pu Fen Xi; 2017 Feb; 37(2):391-3. PubMed ID: 30264967
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Novel AlN/Pt/ZnO Electrode for High Temperature SAW Sensors.
    Liu X; Peng B; Zhang W; Zhu J; Liu X; Wei M
    Materials (Basel); 2017 Jan; 10(1):. PubMed ID: 28772429
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application.
    Gao S; Zeng F; Li F; Wang M; Mao H; Wang G; Song C; Pan F
    Nanoscale; 2015 Apr; 7(14):6031-8. PubMed ID: 25765948
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 12.