207 related articles for article (PubMed ID: 21151167)
1. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process.
Banger KK; Yamashita Y; Mori K; Peterson RL; Leedham T; Rickard J; Sirringhaus H
Nat Mater; 2011 Jan; 10(1):45-50. PubMed ID: 21151167
[TBL] [Abstract][Full Text] [Related]
2. Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films.
Kim YH; Heo JS; Kim TH; Park S; Yoon MH; Kim J; Oh MS; Yi GR; Noh YY; Park SK
Nature; 2012 Sep; 489(7414):128-32. PubMed ID: 22955624
[TBL] [Abstract][Full Text] [Related]
3. Spray-combustion synthesis: efficient solution route to high-performance oxide transistors.
Yu X; Smith J; Zhou N; Zeng L; Guo P; Xia Y; Alvarez A; Aghion S; Lin H; Yu J; Chang RP; Bedzyk MJ; Ferragut R; Marks TJ; Facchetti A
Proc Natl Acad Sci U S A; 2015 Mar; 112(11):3217-22. PubMed ID: 25733848
[TBL] [Abstract][Full Text] [Related]
4. High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors.
Banger KK; Peterson RL; Mori K; Yamashita Y; Leedham T; Sirringhaus H
Chem Mater; 2014 Jan; 26(2):1195-1203. PubMed ID: 24511184
[TBL] [Abstract][Full Text] [Related]
5. Solution-Processed Gallium-Tin-Based Oxide Semiconductors for Thin-Film Transistors.
Zhang X; Lee H; Kim J; Kim EJ; Park J
Materials (Basel); 2017 Dec; 11(1):. PubMed ID: 29283408
[TBL] [Abstract][Full Text] [Related]
6. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.
Nomura K; Ohta H; Takagi A; Kamiya T; Hirano M; Hosono H
Nature; 2004 Nov; 432(7016):488-92. PubMed ID: 15565150
[TBL] [Abstract][Full Text] [Related]
7. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices.
Lin YH; Faber H; Labram JG; Stratakis E; Sygellou L; Kymakis E; Hastas NA; Li R; Zhao K; Amassian A; Treat ND; McLachlan M; Anthopoulos TD
Adv Sci (Weinh); 2015 Jul; 2(7):1500058. PubMed ID: 27660741
[TBL] [Abstract][Full Text] [Related]
8. Aqueous Solution Processing of Combustible Precursor Compounds into Amorphous Indium Gallium Zinc Oxide (IGZO) Semiconductors for Thin Film Transistor Applications.
Sanctis S; Hoffmann RC; Koslowski N; Foro S; Bruns M; Schneider JJ
Chem Asian J; 2018 Dec; 13(24):3912-3919. PubMed ID: 30426698
[TBL] [Abstract][Full Text] [Related]
9. Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications.
Socratous J; Banger KK; Vaynzof Y; Sadhanala A; Brown AD; Sepe A; Steiner U; Sirringhaus H
Adv Funct Mater; 2015 Mar; 25(12):1873-1885. PubMed ID: 26190964
[TBL] [Abstract][Full Text] [Related]
10. Catalytic Metal-Accelerated Crystallization of High-Performance Solution-Processed Earth-Abundant Metal Oxide Semiconductors.
Shin JC; Kwon SM; Kang J; Jeon SP; Heo JS; Kim YH; Cho SW; Park SK
ACS Appl Mater Interfaces; 2020 Jun; 12(22):25000-25010. PubMed ID: 32394695
[TBL] [Abstract][Full Text] [Related]
11. Solution-Grown Homojunction Oxide Thin-Film Transistors.
Lee J; Lee J; Park J; Lee SE; Lee EG; Im C; Lim KH; Kim YS
ACS Appl Mater Interfaces; 2019 Jan; 11(4):4103-4110. PubMed ID: 30607933
[TBL] [Abstract][Full Text] [Related]
12. Rare-metal-free high-performance Ga-Sn-O thin film transistor.
Matsuda T; Umeda K; Kato Y; Nishimoto D; Furuta M; Kimura M
Sci Rep; 2017 Mar; 7():44326. PubMed ID: 28290547
[TBL] [Abstract][Full Text] [Related]
13. Enhanced Interfacial Integrity of Amorphous Oxide Thin-Film Transistors by Elemental Diffusion of Ternary Oxide Semiconductors.
Jeon SP; Heo JS; Kim I; Kim YH; Park SK
ACS Appl Mater Interfaces; 2020 Dec; 12(52):57996-58004. PubMed ID: 33332113
[TBL] [Abstract][Full Text] [Related]
14. Accelerated formation of metal oxide thin film at 200 °C using oxygen supplied by a nitric acid additive and residual organic suction vacuum annealing for thin-film transistor applications.
Jeong WH; Kim DL; Kim HJ
ACS Appl Mater Interfaces; 2013 Sep; 5(18):9051-6. PubMed ID: 23962037
[TBL] [Abstract][Full Text] [Related]
15. Solution-processable LaZrOx/SiO2 gate dielectric at low temperature of 180 °C for high-performance metal oxide field-effect transistors.
Je SY; Son BG; Kim HG; Park MY; Do LM; Choi R; Jeong JK
ACS Appl Mater Interfaces; 2014 Nov; 6(21):18693-703. PubMed ID: 25285585
[TBL] [Abstract][Full Text] [Related]
16. Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors.
Xu W; Wang H; Xie F; Chen J; Cao H; Xu JB
ACS Appl Mater Interfaces; 2015 Mar; 7(10):5803-10. PubMed ID: 25679286
[TBL] [Abstract][Full Text] [Related]
17. Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors.
Weidling AM; Turkani VS; Luo B; Schroder KA; Swisher SL
ACS Omega; 2021 Jul; 6(27):17323-17334. PubMed ID: 34278118
[TBL] [Abstract][Full Text] [Related]
18. n-Channel semiconductor materials design for organic complementary circuits.
Usta H; Facchetti A; Marks TJ
Acc Chem Res; 2011 Jul; 44(7):501-10. PubMed ID: 21615105
[TBL] [Abstract][Full Text] [Related]
19. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing.
Kim MG; Kanatzidis MG; Facchetti A; Marks TJ
Nat Mater; 2011 May; 10(5):382-8. PubMed ID: 21499311
[TBL] [Abstract][Full Text] [Related]
20. Effects of solution temperature on solution-processed high-performance metal oxide thin-film transistors.
Lee KH; Park JH; Yoo YB; Jang WS; Oh JY; Chae SS; Moon KJ; Myoung JM; Baik HK
ACS Appl Mater Interfaces; 2013 Apr; 5(7):2585-92. PubMed ID: 23461268
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]