127 related articles for article (PubMed ID: 21170141)
1. In situ Control of Si/Ge Growth on Stripe-Patterned Substrates Using Reflection High-Energy Electron Diffraction and Scanning Tunneling Microscopy.
Sanduijav B; Matei DG; Springholz G
Nanoscale Res Lett; 2010 Oct; 5(12):1935-41. PubMed ID: 21170141
[TBL] [Abstract][Full Text] [Related]
2. Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM.
Gangopadhyay S; Yoshimura M; Ueda K
Nanotechnology; 2009 Nov; 20(47):475401. PubMed ID: 19875880
[TBL] [Abstract][Full Text] [Related]
3. A combined In situ grazing incidence small angle X-ray scattering and grazing incidence X-ray diffraction study of the growth of Ge Islands on pit-patterned Si(001) substrates.
Richard MI; Schülli TU; Renaud G; Zhong ZZ; Bauer G
J Nanosci Nanotechnol; 2011 Oct; 11(10):9123-8. PubMed ID: 22400312
[TBL] [Abstract][Full Text] [Related]
4. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.
Bollani M; Chrastina D; Fedorov A; Sordan R; Picco A; Bonera E
Nanotechnology; 2010 Nov; 21(47):475302. PubMed ID: 21030775
[TBL] [Abstract][Full Text] [Related]
5. Influence of the Si cap layer on the SiGe islands morphology.
Zak M; Laval JY; Dłuzewski PA; Kret S; Yam V; Bouchier D; Fossard F
Micron; 2009 Jan; 40(1):122-5. PubMed ID: 18395456
[TBL] [Abstract][Full Text] [Related]
6. Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates.
Grydlik M; Langer G; Fromherz T; Schäffler F; Brehm M
Nanotechnology; 2013 Mar; 24(10):105601. PubMed ID: 23416837
[TBL] [Abstract][Full Text] [Related]
7. Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED.
Arapkina LV; Yuryev VA; Chizh KV; Shevlyuga VM; Storojevyh MS; Krylova LA
Nanoscale Res Lett; 2011 Mar; 6(1):218. PubMed ID: 21711733
[TBL] [Abstract][Full Text] [Related]
8. Reversible shape evolution of Ge islands on Si(001).
Rastelli A; Kummer M; von Känel H
Phys Rev Lett; 2001 Dec; 87(25):256101. PubMed ID: 11736588
[TBL] [Abstract][Full Text] [Related]
9. Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface.
Vanacore GM; Zani M; Bollani M; Colombo D; Isella G; Osmond J; Sordan R; Tagliaferri A
Nanoscale Res Lett; 2010 Sep; 5(12):1921-1925. PubMed ID: 21170398
[TBL] [Abstract][Full Text] [Related]
10. Temperature dependent low energy electron microscopy study of Ge island growth on bare and Ga terminated Si(112).
Speckmann M; Schmidt T; Flege JI; Sadowski JT; Sutter P; Falta J
J Phys Condens Matter; 2009 Aug; 21(31):314020. PubMed ID: 21828581
[TBL] [Abstract][Full Text] [Related]
11. Homoepitaxial Growth of Metal Halide Crystals Investigated by Reflection High-Energy Electron Diffraction.
Chen P; Kuttipillai PS; Wang L; Lunt RR
Sci Rep; 2017 Jan; 7():40542. PubMed ID: 28071732
[TBL] [Abstract][Full Text] [Related]
12. Initial stage growth of GexSi1-x layers and Ge quantum dot formation on GexSi1-x surface by MBE.
Nikiforov AI; Timofeev VA; Teys SA; Gutakovsky AK; Pchelyakov OP
Nanoscale Res Lett; 2012 Oct; 7(1):561. PubMed ID: 23043796
[TBL] [Abstract][Full Text] [Related]
13. Microphotoluminescence and perfect ordering of SiGe islands on pit-patterned Si(001) substrates.
Hackl F; Grydlik M; Brehm M; Groiss H; Schäffler F; Fromherz T; Bauer G
Nanotechnology; 2011 Apr; 22(16):165302. PubMed ID: 21393825
[TBL] [Abstract][Full Text] [Related]
14. Nanopatterning of Si(001) for bottom-up fabrication of nanostructures.
Hu Y; Kalachahi HH; Das AK; Koch R
Nanotechnology; 2012 Apr; 23(16):165301. PubMed ID: 22460604
[TBL] [Abstract][Full Text] [Related]
15. Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source.
Vanacore GM; Zani M; Bollani M; Bonera E; Nicotra G; Osmond J; Capellini G; Isella G; Tagliaferri A
Nanotechnology; 2014 Apr; 25(13):135606. PubMed ID: 24594569
[TBL] [Abstract][Full Text] [Related]
16. Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity.
Yuryev VA; Arapkina LV; Storozhevykh MS; Chapnin VA; Chizh KV; Uvarov OV; Kalinushkin VP; Zhukova ES; Prokhorov AS; Spektor IE; Gorshunov BP
Nanoscale Res Lett; 2012 Jul; 7(1):414. PubMed ID: 22824144
[TBL] [Abstract][Full Text] [Related]
17. In situ reflection electron microscopy of Ge island nucleation on mesa structures.
Ross FM; Kammler M; Walsh ME; Reuter MC
Microsc Microanal; 2004 Feb; 10(1):105-11. PubMed ID: 15306072
[TBL] [Abstract][Full Text] [Related]
18. Si/Ge intermixing during Ge Stranski-Krastanov growth.
Portavoce A; Hoummada K; Ronda A; Mangelinck D; Berbezier I
Beilstein J Nanotechnol; 2014; 5():2374-82. PubMed ID: 25551065
[TBL] [Abstract][Full Text] [Related]
19. Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy.
Mashanov V; Ulyanov V; Timofeev V; Nikiforov A; Pchelyakov O; Yu IS; Cheng H
Nanoscale Res Lett; 2011 Jan; 6(1):85. PubMed ID: 21711584
[TBL] [Abstract][Full Text] [Related]
20. Thermally induced morphology evolution of pit-patterned Si substrate and its effect on nucleation properties of Ge dots.
Chen HM; Kuan CH; Suen YW; Luo GL; Lai YP; Wang FM; Chen ST
Nanotechnology; 2012 Jan; 23(1):015303. PubMed ID: 22155926
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
