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23. A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode. Chen LC; Wang CK; Huang JB; Hong LS Nanotechnology; 2009 Feb; 20(8):085303. PubMed ID: 19417447 [TBL] [Abstract][Full Text] [Related]
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