These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

136 related articles for article (PubMed ID: 21231625)

  • 1. Optical imaging of electrical carrier injection into individual InAs quantum dots.
    Baumgartner A; Stock E; Patanè A; Eaves L; Henini M; Bimberg D
    Phys Rev Lett; 2010 Dec; 105(25):257401. PubMed ID: 21231625
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Spin effects in InAs self-assembled quantum dots.
    Dos Santos EC; Gobato YG; Brasil MJ; Taylor DA; Henini M
    Nanoscale Res Lett; 2011 Feb; 6(1):115. PubMed ID: 21711647
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Electron emissions in InAs quantum dots containing a nitrogen incorporation induced defect state: the influence of thermal annealing.
    Chen JF; Yu CC; Yang CH
    Nanotechnology; 2008 Dec; 19(49):495201. PubMed ID: 21730663
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Capacitance transient analysis of different-sized InAs/GaAs quantum dot structures.
    Song H; Kim JS; Kim EK; Lee SJ; Noh SK
    J Nanosci Nanotechnol; 2011 Jul; 11(7):6504-9. PubMed ID: 22121745
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Effect of growth temperature and quantum structure on InAs/GaAs quantum dot solar cell.
    Park MH; Kim HS; Park SJ; Song JD; Kim SH; Lee YJ; Choi WJ; Park JH
    J Nanosci Nanotechnol; 2014 Apr; 14(4):2955-9. PubMed ID: 24734716
    [TBL] [Abstract][Full Text] [Related]  

  • 6. InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm.
    Strauss M; Höfling S; Forchel A
    Nanotechnology; 2009 Dec; 20(50):505601. PubMed ID: 19907066
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots.
    Shamirzaev TS; Abramkin DS; Nenashev AV; Zhuravlev KS; Trojánek F; Dzurnák B; Malý P
    Nanotechnology; 2010 Apr; 21(15):155703. PubMed ID: 20332562
    [TBL] [Abstract][Full Text] [Related]  

  • 8. InAs quantum dots on nanopatterned GaAs (001) surface: the growth, optical properties, and device implementation.
    Wong PS; Liang B; Huffaker DL
    J Nanosci Nanotechnol; 2010 Mar; 10(3):1537-50. PubMed ID: 20355542
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.
    Tatebayashi J; Liang BL; Laghumavarapu RB; Bussian DA; Htoon H; Klimov V; Balakrishnan G; Dawson LR; Huffaker DL
    Nanotechnology; 2008 Jul; 19(29):295704. PubMed ID: 21730609
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Output power of a double tunneling-injection quantum dot laser.
    Han DS; Asryan LV
    Nanotechnology; 2010 Jan; 21(1):015201. PubMed ID: 19946152
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Quantum dots for terahertz generation.
    Liu HC; Aslan B; Gupta JA; Wasilewski ZR; Aers GC; Springthorpe AJ; Buchanan M
    J Phys Condens Matter; 2008 Sep; 20(38):384211. PubMed ID: 21693819
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Temperature dependent empirical pseudopotential theory for self-assembled quantum dots.
    Wang J; Gong M; Guo GC; He L
    J Phys Condens Matter; 2012 Nov; 24(47):475302. PubMed ID: 23103408
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Morphology and optical properties of single- and multi-layer InAs quantum dots.
    Hsu CC; Hsu RQ; Wu YH
    J Electron Microsc (Tokyo); 2010 Aug; 59 Suppl 1():S149-54. PubMed ID: 20576720
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Valence band offset, strain and shape effects on confined states in self-assembled InAs/InP and InAs/GaAs quantum dots.
    Zieliński M
    J Phys Condens Matter; 2013 Nov; 25(46):465301. PubMed ID: 24129261
    [TBL] [Abstract][Full Text] [Related]  

  • 15. In-Well Ionization from Monolayer Quantum Dots for Non-Carrier-Injection Electroluminescence.
    Shen Y; Li W; Wang K; Chen R; Wu C; Zhou X; Zhang Y; Xiao Y; Zhao S; Guo T
    J Phys Chem Lett; 2022 Nov; 13(45):10649-10655. PubMed ID: 36354201
    [TBL] [Abstract][Full Text] [Related]  

  • 16. The Hanle effect and electron spin polarization in InAs/GaAs quantum dots up to room temperature.
    Beyer J; Buyanova IA; Suraprapapich S; Tu CW; Chen WM
    Nanotechnology; 2012 Apr; 23(13):135705. PubMed ID: 22421164
    [TBL] [Abstract][Full Text] [Related]  

  • 17. An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots.
    Qiu F; Qiu W; Li Y; Wang X; Zhang Y; Zhou X; Lv Y; Sun Y; Deng H; Hu S; Dai N; Wang C; Yang Y; Zhuang Q; Hayne M; Krier A
    Nanotechnology; 2016 Feb; 27(6):065602. PubMed ID: 26684716
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Site-controlled self-assembled InAs quantum dots grown on GaAs substrates.
    Lin SY; Tseng CC; Chung TH; Liao WH; Chen SH; Chyi JI
    Nanotechnology; 2010 Jul; 21(29):295304. PubMed ID: 20601753
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm.
    Liu WS; Tseng HL; Kuo PC
    Opt Express; 2014 Aug; 22(16):18860-9. PubMed ID: 25320972
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission.
    Sapienza L; Davanço M; Badolato A; Srinivasan K
    Nat Commun; 2015 Jul; 6():7833. PubMed ID: 26211442
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.