520 related articles for article (PubMed ID: 21240394)
1. Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors.
Yu C; Liu H; Ni W; Gao N; Zhao J; Zhang H
Phys Chem Chem Phys; 2011 Feb; 13(8):3461-7. PubMed ID: 21240394
[TBL] [Abstract][Full Text] [Related]
2. Finite size effects on the gate leakage current in graphene nanoribbon field-effect transistors.
Mao LF
Nanotechnology; 2009 Jul; 20(27):275203. PubMed ID: 19528675
[TBL] [Abstract][Full Text] [Related]
3. Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.
Xu H; Zhang Z; Xu H; Wang Z; Wang S; Peng LM
ACS Nano; 2011 Jun; 5(6):5031-7. PubMed ID: 21528892
[TBL] [Abstract][Full Text] [Related]
4. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory.
Han SJ; Reddy D; Carpenter GD; Franklin AD; Jenkins KA
ACS Nano; 2012 Jun; 6(6):5220-6. PubMed ID: 22582702
[TBL] [Abstract][Full Text] [Related]
5. Polymer electrolyte-gated organic field-effect transistors: low-voltage, high-current switches for organic electronics and testbeds for probing electrical transport at high charge carrier density.
Panzer MJ; Frisbie CD
J Am Chem Soc; 2007 May; 129(20):6599-607. PubMed ID: 17472381
[TBL] [Abstract][Full Text] [Related]
6. Self-aligned fabrication of graphene RF transistors with T-shaped gate.
Badmaev A; Che Y; Li Z; Wang C; Zhou C
ACS Nano; 2012 Apr; 6(4):3371-6. PubMed ID: 22404336
[TBL] [Abstract][Full Text] [Related]
7. Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering.
Ding L; Wang Z; Pei T; Zhang Z; Wang S; Xu H; Peng F; Li Y; Peng LM
ACS Nano; 2011 Apr; 5(4):2512-9. PubMed ID: 21370813
[TBL] [Abstract][Full Text] [Related]
8. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
Yoon A; Hong WK; Lee T
J Nanosci Nanotechnol; 2007 Nov; 7(11):4101-5. PubMed ID: 18047128
[TBL] [Abstract][Full Text] [Related]
9. Chemical and biological sensing applications based on graphene field-effect transistors.
Ohno Y; Maehashi K; Matsumoto K
Biosens Bioelectron; 2010 Dec; 26(4):1727-30. PubMed ID: 20800470
[TBL] [Abstract][Full Text] [Related]
10. Scanning gate microscopy on graphene: charge inhomogeneity and extrinsic doping.
Jalilian R; Jauregui LA; Lopez G; Tian J; Roecker C; Yazdanpanah MM; Cohn RW; Jovanovic I; Chen YP
Nanotechnology; 2011 Jul; 22(29):295705. PubMed ID: 21677372
[TBL] [Abstract][Full Text] [Related]
11. Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms.
Rumyantsev S; Liu G; Stillman W; Shur M; Balandin AA
J Phys Condens Matter; 2010 Oct; 22(39):395302. PubMed ID: 21403224
[TBL] [Abstract][Full Text] [Related]
12. Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors.
Liu W; Jackson BL; Zhu J; Miao CQ; Chung CH; Park YJ; Sun K; Woo J; Xie YH
ACS Nano; 2010 Jul; 4(7):3927-32. PubMed ID: 20536162
[TBL] [Abstract][Full Text] [Related]
13. Electro-oxidized epitaxial graphene channel field-effect transistors with single-walled carbon nanotube thin film gate electrode.
Ramesh P; Itkis ME; Bekyarova E; Wang F; Niyogi S; Chi X; Berger C; de Heer W; Haddon RC
J Am Chem Soc; 2010 Oct; 132(41):14429-36. PubMed ID: 20873843
[TBL] [Abstract][Full Text] [Related]
14. Hysteresis of electronic transport in graphene transistors.
Wang H; Wu Y; Cong C; Shang J; Yu T
ACS Nano; 2010 Dec; 4(12):7221-8. PubMed ID: 21047068
[TBL] [Abstract][Full Text] [Related]
15. Ballistic transport of graphene pnp junctions with embedded local gates.
Nam SG; Ki DK; Park JW; Kim Y; Kim JS; Lee HJ
Nanotechnology; 2011 Oct; 22(41):415203. PubMed ID: 21914932
[TBL] [Abstract][Full Text] [Related]
16. Graphene-like metal-on-silicon field-effect transistor.
Dragoman M; Konstantinidis G; Tsagaraki K; Kostopoulos T; Dragoman D; Neculoiu D
Nanotechnology; 2012 Aug; 23(30):305201. PubMed ID: 22750795
[TBL] [Abstract][Full Text] [Related]
17. DC modeling and the source of flicker noise in passivated carbon nanotube transistors.
Kim S; Kim S; Janes DB; Mohammadi S; Back J; Shim M
Nanotechnology; 2010 Sep; 21(38):385203. PubMed ID: 20798468
[TBL] [Abstract][Full Text] [Related]
18. n-Type reduced graphene oxide field-effect transistors (FETs) from photoactive metal oxides.
Yoo H; Kim Y; Lee J; Lee H; Yoon Y; Kim G; Lee H
Chemistry; 2012 Apr; 18(16):4923-9. PubMed ID: 22422712
[TBL] [Abstract][Full Text] [Related]
19. The formation of a p-n junction in a polymer electrolyte top-gated bilayer graphene transistor.
Chakraborty B; Das A; Sood AK
Nanotechnology; 2009 Sep; 20(36):365203. PubMed ID: 19687535
[TBL] [Abstract][Full Text] [Related]
20. Electron transport properties of atomic carbon nanowires between graphene electrodes.
Shen L; Zeng M; Yang SW; Zhang C; Wang X; Feng Y
J Am Chem Soc; 2010 Aug; 132(33):11481-6. PubMed ID: 20677763
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
