These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
145 related articles for article (PubMed ID: 21271736)
1. Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements. Meric I; Dean CR; Young AF; Baklitskaya N; Tremblay NJ; Nuckolls C; Kim P; Shepard KL Nano Lett; 2011 Mar; 11(3):1093-7. PubMed ID: 21271736 [TBL] [Abstract][Full Text] [Related]
2. Top-gated chemical vapor deposition grown graphene transistors with current saturation. Bai J; Liao L; Zhou H; Cheng R; Liu L; Huang Y; Duan X Nano Lett; 2011 Jun; 11(6):2555-9. PubMed ID: 21548551 [TBL] [Abstract][Full Text] [Related]
3. Current saturation and voltage gain in bilayer graphene field effect transistors. Szafranek BN; Fiori G; Schall D; Neumaier D; Kurz H Nano Lett; 2012 Mar; 12(3):1324-8. PubMed ID: 22339809 [TBL] [Abstract][Full Text] [Related]
4. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory. Han SJ; Reddy D; Carpenter GD; Franklin AD; Jenkins KA ACS Nano; 2012 Jun; 6(6):5220-6. PubMed ID: 22582702 [TBL] [Abstract][Full Text] [Related]
5. High-frequency graphene voltage amplifier. Han SJ; Jenkins KA; Valdes Garcia A; Franklin AD; Bol AA; Haensch W Nano Lett; 2011 Sep; 11(9):3690-3. PubMed ID: 21805988 [TBL] [Abstract][Full Text] [Related]
6. High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide. Guerriero E; Pedrinazzi P; Mansouri A; Habibpour O; Winters M; Rorsman N; Behnam A; Carrion EA; Pesquera A; Centeno A; Zurutuza A; Pop E; Zirath H; Sordan R Sci Rep; 2017 May; 7(1):2419. PubMed ID: 28546634 [TBL] [Abstract][Full Text] [Related]
16. Improved performance of graphene transistors by strain engineering. Nguyen VH; Nguyen HV; Dollfus P Nanotechnology; 2014 Apr; 25(16):165201. PubMed ID: 24670679 [TBL] [Abstract][Full Text] [Related]
17. Nonlinear current-voltage characteristics and enhanced negative differential conductance in graphene field effect transistors. Wang L; Chen X; Hu Y; Yu A; Lu W Nanoscale; 2014 Nov; 6(21):12769-79. PubMed ID: 25224726 [TBL] [Abstract][Full Text] [Related]
18. Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors. Yu C; Liu H; Ni W; Gao N; Zhao J; Zhang H Phys Chem Chem Phys; 2011 Feb; 13(8):3461-7. PubMed ID: 21240394 [TBL] [Abstract][Full Text] [Related]
19. New analytical drain current model for the sub-linear region of output characteristics of graphene field-effect transistors in the low carrier density limit. Lee D; Lee K; Kim K; Kim O J Nanosci Nanotechnol; 2014 Dec; 14(12):9082-7. PubMed ID: 25971014 [TBL] [Abstract][Full Text] [Related]
20. Optimal architecture for ultralow noise graphene transistors at room temperature. Kakkar S; Karnatak P; Ali Aamir M; Watanabe K; Taniguchi T; Ghosh A Nanoscale; 2020 Sep; 12(34):17762-17768. PubMed ID: 32820764 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]