These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

181 related articles for article (PubMed ID: 21366223)

  • 1. Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics.
    Guo W; Zhang M; Bhattacharya P; Heo J
    Nano Lett; 2011 Apr; 11(4):1434-8. PubMed ID: 21366223
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.
    Nguyen HP; Cui K; Zhang S; Djavid M; Korinek A; Botton GA; Mi Z
    Nano Lett; 2012 Mar; 12(3):1317-23. PubMed ID: 22283508
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Epitaxial growth of InGaN nanowire arrays for light emitting diodes.
    Hahn C; Zhang Z; Fu A; Wu CH; Hwang YJ; Gargas DJ; Yang P
    ACS Nano; 2011 May; 5(5):3970-6. PubMed ID: 21495684
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics.
    Zhao C; Ng TK; ElAfandy RT; Prabaswara A; Consiglio GB; Ajia IA; Roqan IS; Janjua B; Shen C; Eid J; Alyamani AY; El-Desouki MM; Ooi BS
    Nano Lett; 2016 Jul; 16(7):4616-23. PubMed ID: 27352143
    [TBL] [Abstract][Full Text] [Related]  

  • 5. High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).
    Koester R; Sager D; Quitsch WA; Pfingsten O; Poloczek A; Blumenthal S; Keller G; Prost W; Bacher G; Tegude FJ
    Nano Lett; 2015 Apr; 15(4):2318-23. PubMed ID: 25758029
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy.
    Guo W; Zhang M; Banerjee A; Bhattacharya P
    Nano Lett; 2010 Sep; 10(9):3355-9. PubMed ID: 20701296
    [TBL] [Abstract][Full Text] [Related]  

  • 7. GaN nanostructure-based light emitting diodes and semiconductor lasers.
    Viswanath AK
    J Nanosci Nanotechnol; 2014 Feb; 14(2):1947-82. PubMed ID: 24749467
    [TBL] [Abstract][Full Text] [Related]  

  • 8. GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.
    Tomioka K; Motohisa J; Hara S; Hiruma K; Fukui T
    Nano Lett; 2010 May; 10(5):1639-44. PubMed ID: 20377199
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs.
    Römer F; Witzigmann B
    Opt Express; 2014 Oct; 22 Suppl 6():A1440-52. PubMed ID: 25607301
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Structural and optical properties of disc-in-wire InGaN/GaN LEDs.
    Yan L; Jahangir S; Wight SA; Nikoobakht B; Bhattacharya P; Millunchick JM
    Nano Lett; 2015 Mar; 15(3):1535-9. PubMed ID: 25658444
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Gallium nitride nanowire based nanogenerators and light-emitting diodes.
    Chen CY; Zhu G; Hu Y; Yu JW; Song J; Cheng KY; Peng LH; Chou LJ; Wang ZL
    ACS Nano; 2012 Jun; 6(6):5687-92. PubMed ID: 22607154
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Enhancement of light extraction efficiency of GaN-based light-emitting diodes by ZnO nanorods with different sizes.
    Oh S; Shin KS; Kim SW; Lee S; Yu H; Cho S; Kim KK
    J Nanosci Nanotechnol; 2013 May; 13(5):3696-9. PubMed ID: 23858930
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays.
    Chern W; Hsu K; Chun IS; Azeredo BP; Ahmed N; Kim KH; Zuo JM; Fang N; Ferreira P; Li X
    Nano Lett; 2010 May; 10(5):1582-8. PubMed ID: 20423044
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Flexible inorganic nanowire light-emitting diode.
    Nadarajah A; Word RC; Meiss J; Könenkamp R
    Nano Lett; 2008 Feb; 8(2):534-7. PubMed ID: 18220439
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands.
    Wei T; Kong Q; Wang J; Li J; Zeng Y; Wang G; Li J; Liao Y; Yi F
    Opt Express; 2011 Jan; 19(2):1065-71. PubMed ID: 21263645
    [TBL] [Abstract][Full Text] [Related]  

  • 16. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.
    Chuang LC; Sedgwick FG; Chen R; Ko WS; Moewe M; Ng KW; Tran TT; Chang-Hasnain C
    Nano Lett; 2011 Feb; 11(2):385-90. PubMed ID: 21174451
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Synthesis and luminescence properties of NaSrPO4:Eu2+, Tb3+, Mn2+ for WLED.
    Huang S; Chen Y; Wei X; Yin M
    J Nanosci Nanotechnol; 2014 Jun; 14(6):4574-8. PubMed ID: 24738431
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2).
    Cho CY; Lee JB; Lee SJ; Han SH; Park TY; Kim JW; Kim YC; Park SJ
    Opt Express; 2010 Jan; 18(2):1462-8. PubMed ID: 20173974
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer.
    Lin BC; Chen KJ; Wang CH; Chiu CH; Lan YP; Lin CC; Lee PT; Shih MH; Kuo YK; Kuo HC
    Opt Express; 2014 Jan; 22(1):463-9. PubMed ID: 24515006
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Photoluminescence Probing of Complex H
    Maier K; Helwig A; Müller G; Hille P; Teubert J; Eickhoff M
    Nano Lett; 2017 Feb; 17(2):615-621. PubMed ID: 28094995
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.