These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
231 related articles for article (PubMed ID: 21368353)
21. Strained Si Xie L; Zhu H; Zhang Y; Ai X; Wang G; Li J; Du A; Kong Z; Yin X; Li C; Zhao L; Li Y; Jia K; Li B; Radamson HH Nanomaterials (Basel); 2020 Aug; 10(9):. PubMed ID: 32872556 [TBL] [Abstract][Full Text] [Related]
23. An atomic seesaw switch formed by tilted asymmetric Sn-Ge dimers on a Ge (001) surface. Tomatsu K; Nakatsuji K; Iimori T; Takagi Y; Kusuhara H; Ishii A; Komori F Science; 2007 Mar; 315(5819):1696-8. PubMed ID: 17379803 [TBL] [Abstract][Full Text] [Related]
24. Double dative bond configuration: pyrimidine on Ge(100). Lee JY; Jung SJ; Hong S; Kim S J Phys Chem B; 2005 Jan; 109(1):348-51. PubMed ID: 16851021 [TBL] [Abstract][Full Text] [Related]
25. Phosphine dissociation and diffusion on Si(001) observed at the atomic scale. Schofield SR; Curson NJ; Warschkow O; Marks NA; Wilson HF; Simmons MY; Smith PV; Radny MW; McKenzie DR; Clark RG J Phys Chem B; 2006 Feb; 110(7):3173-9. PubMed ID: 16494325 [TBL] [Abstract][Full Text] [Related]
27. Fabrication of fracture-free nanoglassified substrates by layer-by-layer deposition with a paint gun technique for real-time monitoring of protein-lipid interactions. Linman MJ; Culver SP; Cheng Q Langmuir; 2009 Mar; 25(5):3075-82. PubMed ID: 19437774 [TBL] [Abstract][Full Text] [Related]
28. A cryogenic Quadraprobe scanning tunneling microscope system with fabrication capability for nanotransport research. Kim TH; Wang Z; Wendelken JF; Weitering HH; Li W; Li AP Rev Sci Instrum; 2007 Dec; 78(12):123701. PubMed ID: 18163731 [TBL] [Abstract][Full Text] [Related]
29. Mediation of chain reactions by propagating radicals during halogenation of H-masked Si(100): implications for atomic-scale lithography and processing. Ferng SS; Wu ST; Lin DS; Chiang TC J Chem Phys; 2009 Apr; 130(16):164706. PubMed ID: 19405615 [TBL] [Abstract][Full Text] [Related]
30. Atomistics of Ge deposition on Si(100) by atomic layer epitaxy. Lin DS; Wu JL; Pan SY; Chiang TC Phys Rev Lett; 2003 Jan; 90(4):046102. PubMed ID: 12570436 [TBL] [Abstract][Full Text] [Related]
31. Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition. Bollani M; Chrastina D; Fedorov A; Sordan R; Picco A; Bonera E Nanotechnology; 2010 Nov; 21(47):475302. PubMed ID: 21030775 [TBL] [Abstract][Full Text] [Related]
32. Phosphorus atomic layer doping of germanium by the stacking of multiple δ layers. Scappucci G; Capellini G; Klesse WM; Simmons MY Nanotechnology; 2011 Sep; 22(37):375203. PubMed ID: 21857100 [TBL] [Abstract][Full Text] [Related]
33. Addition of Mn to Ge quantum dot surfaces--interaction with the Ge QD {105} facet and the Ge(001) wetting layer. Nolph CA; Kassim JK; Floro JA; Reinke P J Phys Condens Matter; 2013 Aug; 25(31):315801. PubMed ID: 23835541 [TBL] [Abstract][Full Text] [Related]
34. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility. Yuryev VA; Arapkina LV Nanoscale Res Lett; 2011 Sep; 6(1):522. PubMed ID: 21892938 [TBL] [Abstract][Full Text] [Related]
35. Atomic-scale visualization of initial growth of homoepitaxial SrTiO₃ thin film on an atomically ordered substrate. Shimizu R; Iwaya K; Ohsawa T; Shiraki S; Hasegawa T; Hashizume T; Hitosugi T ACS Nano; 2011 Oct; 5(10):7967-71. PubMed ID: 21905666 [TBL] [Abstract][Full Text] [Related]
36. Evolution of Ge nanoislands on Si(110)-'16 x 2' surface under thermal annealing studied using STM. Gangopadhyay S; Yoshimura M; Ueda K Nanotechnology; 2009 Nov; 20(47):475401. PubMed ID: 19875880 [TBL] [Abstract][Full Text] [Related]
37. In situ ATR FTIR monitoring of the formation of functionalized mono- and multilayers on germanium substrate: from 7-octenyltrichlorosilane to 7-carboxylsilane. Matijasević J; Hassler N; Reiter G; Fringeli UP Langmuir; 2008 Mar; 24(6):2588-96. PubMed ID: 18237212 [TBL] [Abstract][Full Text] [Related]
38. Mechanism of atomic-scale passivation and flattening of semiconductor surfaces by wet-chemical preparations. Arima K; Endo K; Yamauchi K; Hirose K; Ono T; Sano Y J Phys Condens Matter; 2011 Oct; 23(39):394202. PubMed ID: 21921316 [TBL] [Abstract][Full Text] [Related]