These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

252 related articles for article (PubMed ID: 21369188)

  • 21. Enhancement of the light output efficiency and thermal stability of AlGaN-based deep-ultraviolet light-emitting diodes with Ag-nanodot-based p-contacts and an 8-nm p-GaN cap layer.
    Pan S; Chen K; Guo Y; Liu Z; Zhou Y; Zhang R; Zheng Y
    Opt Express; 2022 Dec; 30(25):44933-44942. PubMed ID: 36522906
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Light extraction efficiency enhancement of GaN-based blue LEDs based on ITO/ InxO ohmic contacts with microstructure formed by annealing in oxygen.
    Luo Y; Bai Y; Han Y; Li H; Wang L; Wang J; Sun C; Hao Z; Xiong B
    Opt Express; 2016 May; 24(10):A797-809. PubMed ID: 27409953
    [TBL] [Abstract][Full Text] [Related]  

  • 23. InGaN-based nano-pillar light emitting diodes fabricated by self-assembled ITO nano-dots.
    Park MJ; Kwak JS
    J Nanosci Nanotechnol; 2012 May; 12(5):4265-8. PubMed ID: 22852387
    [TBL] [Abstract][Full Text] [Related]  

  • 24. High performance of GaN-based flip-chip light-emitting diodes with hole-shape patterned ITO ohmic contact layer and AgIn reflector.
    Lee SH; Baek JH; Kim TH; Park LS
    J Nanosci Nanotechnol; 2011 Oct; 11(10):8695-9. PubMed ID: 22400245
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Improvement in Light Extraction Efficiency of InGaN/GaN Blue Light Emitting Diodes Using Sidewall Texturing.
    Kim JY; Park JR; Kwon MK
    J Nanosci Nanotechnol; 2019 Apr; 19(4):2346-2348. PubMed ID: 30486996
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO2 photonic crystals.
    Wei T; Huo Z; Zhang Y; Zheng H; Chen Y; Yang J; Hu Q; Duan R; Wang J; Zeng Y; Li J
    Opt Express; 2014 Jun; 22 Suppl 4():A1093-100. PubMed ID: 24978072
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Enhanced Light Extraction Efficiency by Self-Masking Technology with Carbonized Photoresist for Light-Emitting Diodes.
    Zhang X; Li S; Wang B; Chen B; Guo H; Yue R; Cai Y
    Micromachines (Basel); 2023 Feb; 14(3):. PubMed ID: 36984941
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes.
    Yu CT; Lai WC; Yen CH; Chang SJ
    Opt Express; 2014 May; 22 Suppl 3():A663-70. PubMed ID: 24922374
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Size-controlled InGaN/GaN nanorod LEDs with an ITO/graphene transparent layer.
    Shim JP; Seong WS; Min JH; Kong DJ; Seo DJ; Kim HJ; Lee DS
    Nanotechnology; 2016 Nov; 27(46):465202. PubMed ID: 27749268
    [TBL] [Abstract][Full Text] [Related]  

  • 30. High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks.
    Chiu CH; Lin CC; Han HV; Liu CY; Chen YH; Lan YP; Yu P; Kuo HC; Lu TC; Wang SC; Chang CY
    Nanotechnology; 2012 Feb; 23(4):045303. PubMed ID: 22222308
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching.
    Oh S; Su PC; Yoon YJ; Cho S; Oh JH; Seong TY; Kim KK
    Opt Express; 2013 Nov; 21 Suppl 6():A970-6. PubMed ID: 24514938
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.
    Lu T; Li S; Zhang K; Liu C; Yin Y; Wu L; Wang H; Yang X; Xiao G; Zhou Y
    Opt Express; 2011 Sep; 19(19):18319-23. PubMed ID: 21935200
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Pulsed laser deposition of ITO/AZO transparent contact layers for GaN LED applications.
    Ou SL; Wuu DS; Liu SP; Fu YC; Huang SC; Horng RH
    Opt Express; 2011 Aug; 19(17):16244-51. PubMed ID: 21934987
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Solution-processed Li-Al layered-double-hydroxide platelet structures for high efficiency InGaN light emitting diodes.
    Lin CF; Tsai PH; Lin ZY; Uan JY; Lin CM; Yang CC; Shieh BC
    Opt Express; 2012 Sep; 20 Suppl 5():A669-77. PubMed ID: 23037533
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Wafer-scale surface roughening for enhanced light extraction of high power AlGaInP-based light-emitting diodes.
    Park HH; Zhang X; Cho Y; Kim DW; Kim J; Lee KW; Choi J; Lee HK; Jung SH; Her EJ; Kim CH; Moon AY; Shin CS; Shin HB; Sung HK; Park KH; Park HH; Kim HJ; Kang HK
    Opt Express; 2014 May; 22 Suppl 3():A723-34. PubMed ID: 24922380
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes.
    Lei PH; Yang PC; Huang PC
    Materials (Basel); 2021 Apr; 14(9):. PubMed ID: 33922982
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Transparent conductive oxide films embedded with plasmonic nanostructure for light-emitting diode applications.
    Chuang SH; Tsung CS; Chen CH; Ou SL; Horng RH; Lin CY; Wuu DS
    ACS Appl Mater Interfaces; 2015 Feb; 7(4):2546-53. PubMed ID: 25562635
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.
    Lee KJ; Chun J; Kim SJ; Oh S; Ha CS; Park JW; Lee SJ; Song JC; Baek JH; Park SJ
    Opt Express; 2016 Mar; 24(5):4391-4398. PubMed ID: 29092267
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on
    Son KJ; Kim TK; Cha YJ; Oh SK; You SJ; Ryou JH; Kwak JS
    Adv Sci (Weinh); 2018 Feb; 5(2):1700637. PubMed ID: 29619312
    [TBL] [Abstract][Full Text] [Related]  

  • 40. InGaN light emitting solar cells with a roughened N-face GaN surface through a laser decomposition process.
    Chen KT; Huang WC; Hsieh TH; Hsieh CH; Lin CF
    Opt Express; 2010 Oct; 18(22):23406-12. PubMed ID: 21164682
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 13.