381 related articles for article (PubMed ID: 21403298)
1. Defect structure in heteroepitaxial semipolar (1122) (Ga, Al)N.
Arroyo Rojas Dasilva Y; Chauvat MP; Ruterana P; Lahourcade L; Monroy E; Nataf G
J Phys Condens Matter; 2010 Sep; 22(35):355802. PubMed ID: 21403298
[TBL] [Abstract][Full Text] [Related]
2. Structure investigations of nonpolar GaN layers.
Neumann W; Mogilatenko A; Wernicke T; Richter E; Weyers M; Kneissl M
J Microsc; 2010 Mar; 237(3):308-13. PubMed ID: 20500386
[TBL] [Abstract][Full Text] [Related]
3. Spiral growth and formation of stacking faults and vacancy islands during molecular beam epitaxy of InN on GaN(0001).
Liu Y; Li L
Nanotechnology; 2011 Oct; 22(42):425707. PubMed ID: 21941037
[TBL] [Abstract][Full Text] [Related]
4. Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE.
Shih CH; Huang TH; Schuber R; Chen YL; Chang L; Lo I; Chou MM; Schaadt DM
Nanoscale Res Lett; 2011 Jun; 6(1):425. PubMed ID: 21711945
[TBL] [Abstract][Full Text] [Related]
5. A GaN bulk crystal with improved structural quality grown by the ammonothermal method.
Hashimoto T; Wu F; Speck JS; Nakamura S
Nat Mater; 2007 Aug; 6(8):568-71. PubMed ID: 17603489
[TBL] [Abstract][Full Text] [Related]
6. Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers.
Zhao G; Wang L; Yang S; Li H; Wei H; Han D; Wang Z
Sci Rep; 2016 Feb; 6():20787. PubMed ID: 26861595
[TBL] [Abstract][Full Text] [Related]
7. Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).
Jang J; Woo S; Min D; Nam O
J Nanosci Nanotechnol; 2015 Mar; 15(3):1895-906. PubMed ID: 26413605
[TBL] [Abstract][Full Text] [Related]
8. Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers.
Zhu T; Ding T; Tang F; Han Y; Ali M; Badcock T; Kappers MJ; Shields AJ; Smoukov SK; Oliver RA
Cryst Growth Des; 2016 Feb; 16(2):1010-1016. PubMed ID: 27065755
[TBL] [Abstract][Full Text] [Related]
9. Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studies.
Liliental-Weber Z; Zakharov DN; Yu KM; Ager JW; Walukiewicz W; Haller EE; Lu H; Schaff WJ
J Electron Microsc (Tokyo); 2005 Jun; 54(3):243-50. PubMed ID: 16123056
[TBL] [Abstract][Full Text] [Related]
10. Unintentional doping in GaN.
Zhu T; Oliver RA
Phys Chem Chem Phys; 2012 Jul; 14(27):9558-73. PubMed ID: 22684337
[TBL] [Abstract][Full Text] [Related]
11. Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.
Hayashi H; Konno Y; Kishino K
Nanotechnology; 2016 Feb; 27(5):055302. PubMed ID: 26674458
[TBL] [Abstract][Full Text] [Related]
12. Elimination of Stacking Faults in Semipolar GaN and Light-Emitting Diodes Grown on Sapphire.
Song J; Choi J; Zhang C; Deng Z; Xie Y; Han J
ACS Appl Mater Interfaces; 2019 Sep; 11(36):33140-33146. PubMed ID: 31454216
[TBL] [Abstract][Full Text] [Related]
13. Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.
Krishna S; Aggarwal N; Mishra M; Maurya KK; Singh S; Dilawar N; Nagarajan S; Gupta G
Phys Chem Chem Phys; 2016 Mar; 18(11):8005-14. PubMed ID: 26916430
[TBL] [Abstract][Full Text] [Related]
14. Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells.
Bergbauer W; Strassburg M; Kölper Ch; Linder N; Roder C; Lähnemann J; Trampert A; Fündling S; Li SF; Wehmann HH; Waag A
Nanotechnology; 2010 Jul; 21(30):305201. PubMed ID: 20603534
[TBL] [Abstract][Full Text] [Related]
15. Defects in semipolar (1122) ZnO grown on (112) LaAlO3/(La,Sr)(Al,Ta)O3 substrate by pulsed laser deposition.
Tian JS; Wu YH; Peng CY; Chiu KA; Shih YS; Do H; Lin PY; Ho YT; Chu YH; Chang L
J Phys Condens Matter; 2013 Mar; 25(12):125801. PubMed ID: 23449009
[TBL] [Abstract][Full Text] [Related]
16. Intentional polarity conversion of AlN epitaxial layers by oxygen.
Stolyarchuk N; Markurt T; Courville A; March K; Zúñiga-Pérez J; Vennéguès P; Albrecht M
Sci Rep; 2018 Sep; 8(1):14111. PubMed ID: 30237522
[TBL] [Abstract][Full Text] [Related]
17. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.
He C; Zhao W; Zhang K; He L; Wu H; Liu N; Zhang S; Liu X; Chen Z
ACS Appl Mater Interfaces; 2017 Dec; 9(49):43386-43392. PubMed ID: 29164860
[TBL] [Abstract][Full Text] [Related]
18. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods.
Figge S; Aschenbrenner T; Kruse C; Kunert G; Schowalter M; Rosenauer A; Hommel D
Nanotechnology; 2011 Jan; 22(2):025603. PubMed ID: 21139192
[TBL] [Abstract][Full Text] [Related]
19. High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks.
Chiu CH; Lin CC; Han HV; Liu CY; Chen YH; Lan YP; Yu P; Kuo HC; Lu TC; Wang SC; Chang CY
Nanotechnology; 2012 Feb; 23(4):045303. PubMed ID: 22222308
[TBL] [Abstract][Full Text] [Related]
20. Highly ordered catalyst-free and mask-free GaN nanorods on r-plane sapphire.
Aschenbrenner T; Kruse C; Kunert G; Figge S; Sebald K; Kalden J; Voss T; Gutowski J; Hommel D
Nanotechnology; 2009 Feb; 20(7):075604. PubMed ID: 19417425
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]