152 related articles for article (PubMed ID: 21446547)
1. Memory effects of nonvolatile memory devices with a floating gate fabricated utilizing Ag nanoparticles embedded into a polymethylmethacrylate layer.
Kim WT; Yun DY; Jung JH; Kim TW
J Nanosci Nanotechnol; 2011 Jan; 11(1):791-5. PubMed ID: 21446547
[TBL] [Abstract][Full Text] [Related]
2. Carrier transport mechanisms of the writing and the erasing processes for Al/ZnO nanoparticles embedded in a polymethyl methacrylate layer/C60/p-Si diodes.
Li F; Cho SW; Park KH; Son DI; Kim TW
J Nanosci Nanotechnol; 2010 Jul; 10(7):4721-4. PubMed ID: 21128486
[TBL] [Abstract][Full Text] [Related]
3. Variations in the memory capability of nonvolatile memory devices fabricated using hybrid composites of InP nanoparticles and a polystyrene layer due to the scale-down.
Lee SH; Yun DY; Jung JH; You JH; Kim TW; Ryu E; Kim SW
J Nanosci Nanotechnol; 2011 Jan; 11(1):449-52. PubMed ID: 21446474
[TBL] [Abstract][Full Text] [Related]
4. Switching Mechanisms of Nonvolatile Memory Devices Fabricated with a Polydopamine Layer.
Yang HY; Yun DY; Kim YN; Hong JM; Kim TW
J Nanosci Nanotechnol; 2016 Feb; 16(2):1685-8. PubMed ID: 27433647
[TBL] [Abstract][Full Text] [Related]
5. Writing and erasing mechanisms of stable nonvolatile memory devices based on SnO2 nanoparticle/polystyrene nanocomposites.
Yun DY; Park HM; Kim TW
J Nanosci Nanotechnol; 2014 Dec; 14(12):9619-22. PubMed ID: 25971108
[TBL] [Abstract][Full Text] [Related]
6. Enhancement of the memory effects for nonvolatile memory devices fabricated utilizing ZnO nanoparticles embedded in a Si3N4 layer.
Oh DH; Cho WJ; Son DI; Kim TW
J Nanosci Nanotechnol; 2010 May; 10(5):3508-11. PubMed ID: 20358988
[TBL] [Abstract][Full Text] [Related]
7. Charge storage variations of organic memory devices fabricated by using C60 molecules embedded in an insulating polymer layer with Au and Al electrodes.
Cho SH; Jung JH; Ham JH; Lee DU; Kim TW
J Nanosci Nanotechnol; 2010 Jul; 10(7):4797-800. PubMed ID: 21128502
[TBL] [Abstract][Full Text] [Related]
8. Electrical bistabilities and memory mechanisms of organic bistable devices fabricated utilizing SnO2 nanoparticles embedded in a poly(methyl methacrylate) layer.
Kwak JK; Yun DY; Son DI; Jung JH; Lee DU; Kim TW
J Nanosci Nanotechnol; 2010 Nov; 10(11):7735-8. PubMed ID: 21138021
[TBL] [Abstract][Full Text] [Related]
9. Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer.
Son DI; Kim JH; Park DH; Choi WK; Li F; Ham JH; Kim TW
Nanotechnology; 2008 Feb; 19(5):055204. PubMed ID: 21817602
[TBL] [Abstract][Full Text] [Related]
10. Organic memory capacitor device fabricated with Ag nanoparticles.
Kim YH; Jung SM; Hu Q; Kim YS; Yoon TS; Lee HH
J Nanosci Nanotechnol; 2011 Jul; 11(7):6044-8. PubMed ID: 22121655
[TBL] [Abstract][Full Text] [Related]
11. Electrical characteristics of floating-gate memory devices with titanium nanoparticles embedded in gate oxides.
Park B; Cho K; Yun J; Koo YS; Lee JH; Kim S
J Nanosci Nanotechnol; 2009 Mar; 9(3):1904-8. PubMed ID: 19435057
[TBL] [Abstract][Full Text] [Related]
12. Operating mechanisms of organic bistable devices containing ZnO nanoparticles embedded in a poly-4-vinyl-phenol layer.
Park KH; Li F; Jung JH; Son DI; Cho SW; Kim TW
J Nanosci Nanotechnol; 2010 Jul; 10(7):4801-4. PubMed ID: 21128503
[TBL] [Abstract][Full Text] [Related]
13. Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer.
Son DI; Park DH; Choi WK; Cho SH; Kim WT; Kim TW
Nanotechnology; 2009 May; 20(19):195203. PubMed ID: 19420634
[TBL] [Abstract][Full Text] [Related]
14. Polymer-ultrathin graphite sheet-polymer composite structured flexible nonvolatile bistable organic memory devices.
Son DI; Shim JH; Park DH; Jung JH; Lee JM; Park WI; Kim TW; Choi WK
Nanotechnology; 2011 Jul; 22(29):295203. PubMed ID: 21685558
[TBL] [Abstract][Full Text] [Related]
15. Memory characteristics of doubly stacked nano-floating gate memory devices with channels of single ZnO nanowires.
Kim S; Cho K; Kwak K; Kim S
J Nanosci Nanotechnol; 2013 Sep; 13(9):6196-8. PubMed ID: 24205627
[TBL] [Abstract][Full Text] [Related]
16. Characteristics of AgInSbTe-SiO2 nanocomposite thin film applied to nonvolatile floating gate memory devices.
Chiang KC; Hsieh TE
Nanotechnology; 2010 Oct; 21(42):425204. PubMed ID: 20858935
[TBL] [Abstract][Full Text] [Related]
17. Single-Walled Carbon-Nanotubes-Based Organic Memory Structures.
Fakher S; Nejm R; Ayesh A; Al-Ghaferi A; Zeze D; Mabrook M
Molecules; 2016 Sep; 21(9):. PubMed ID: 27598112
[TBL] [Abstract][Full Text] [Related]
18. Effect of needle-like silicon nanosurface on the charge storage characteristics of silicon nanocrystals embedded within silicon nitride matrix.
Jung S; Son H; Kim J; Park DH; Sohn BH; Kim K; Yi J
J Nanosci Nanotechnol; 2008 Oct; 8(10):5004-8. PubMed ID: 19198379
[TBL] [Abstract][Full Text] [Related]
19. Covalent assembly of gold nanoparticles for nonvolatile memory applications.
Gupta RK; Kusuma DY; Lee PS; Srinivasan MP
ACS Appl Mater Interfaces; 2011 Dec; 3(12):4619-25. PubMed ID: 22023018
[TBL] [Abstract][Full Text] [Related]
20. Improved Memory Effect of ZnO Nanorods Embedded in an Insulating Polymethylmethacrylate Layer.
Valanarasu S; Kathaiingam A; Rhee JK; Chandramohan R; Vijayan TA; Karunakaran M
J Nanosci Nanotechnol; 2015 Feb; 15(2):1416-20. PubMed ID: 26353665
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]