These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

118 related articles for article (PubMed ID: 21456183)

  • 1. Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon devices with a separated double-gate saddle-type structure.
    Park SS; You JH; Kwack KD; Kim TW
    J Nanosci Nanotechnol; 2011 Feb; 11(2):1337-41. PubMed ID: 21456183
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon memory device with different tunneling oxide thicknesses.
    Kim HJ; You JH; Kim SH; Kwack KD; Kim TW
    J Nanosci Nanotechnol; 2011 Jul; 11(7):6109-13. PubMed ID: 22121667
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Electrical characteristics of nanoscale NAND silicon-oxide-nitride-oxide-silicon flash memory devices fabricated on SOI substrates.
    Ryu JT; You JH; Yoo KH; Kim TW
    J Nanosci Nanotechnol; 2011 Aug; 11(8):7512-5. PubMed ID: 22103232
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Enhancement of the Electrical Characteristics for 3D NAND Flash Memory Devices Due to a Modified Cell Structure in the Gate Region.
    Lee YG; Jung HS; Kim TW
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6148-6151. PubMed ID: 31026926
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Reduce cell to cell charge interference by virtual ground inclusion in 3-dimensional vertical gate NAND flash memory.
    Choi S; Lee J; Oh S; Lee SB
    J Nanosci Nanotechnol; 2011 Jul; 11(7):5865-9. PubMed ID: 22121622
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory.
    Jeong JK; Sung JY; Ko WS; Nam KR; Lee HD; Lee GW
    Micromachines (Basel); 2021 Nov; 12(11):. PubMed ID: 34832812
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages.
    Lee D; Shin C
    Micromachines (Basel); 2022 Jul; 13(7):. PubMed ID: 35888955
    [TBL] [Abstract][Full Text] [Related]  

  • 8. High-performance bottom-gate poly-Si polysilicon-oxide-nitride-oxide-silicon thin film transistors crystallized by excimer laser irradiation for two-bit nonvolatile memory applications.
    Lee IC; Kuo HH; Tsai CC; Wang CL; Yang PY; Wang JL; Cheng HC
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5318-24. PubMed ID: 22966564
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Future prospects of NAND flash memory technology--the evolution from floating gate to charge trapping to 3D stacking.
    Lu CY
    J Nanosci Nanotechnol; 2012 Oct; 12(10):7604-18. PubMed ID: 23421122
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Dependence of Grain Size on the Performance of a Polysilicon Channel TFT for 3D NAND Flash Memory.
    Kim SY; Park JK; Hwang WS; Lee SJ; Lee KH; Pyi SH; Cho BJ
    J Nanosci Nanotechnol; 2016 May; 16(5):5044-8. PubMed ID: 27483868
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash.
    Yang T; Zhang B; Wang Q; Jin L; Xia Z
    Micromachines (Basel); 2023 Mar; 14(3):. PubMed ID: 36985093
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Degradation mechanisms of the program characteristics of 10 nm NAND flash memories due to cell-to-cell interference.
    Ryu JT; Kim TW
    J Nanosci Nanotechnol; 2013 Sep; 13(9):6420-3. PubMed ID: 24205674
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps.
    Park C; Yoon JS; Nam K; Jang H; Park M; Baek RH
    Nanomaterials (Basel); 2023 Apr; 13(9):. PubMed ID: 37176997
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Artificial Neural Network Assisted Error Correction for MLC NAND Flash Memory.
    He R; Hu H; Xiong C; Han G
    Micromachines (Basel); 2021 Jul; 12(8):. PubMed ID: 34442501
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Effects of the Grain Boundary and Interface Traps on the Electrical Characteristics of 3D NAND Flash Memory Devices.
    Lee JG; Kim TW
    J Nanosci Nanotechnol; 2018 Mar; 18(3):1944-1947. PubMed ID: 29448689
    [TBL] [Abstract][Full Text] [Related]  

  • 16. A Silicon Single-Electron Transistor Memory Operating at Room Temperature.
    Guo L; Leobandung E; Chou SY
    Science; 1997 Jan; 275(5300):649-51. PubMed ID: 9005847
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Effect of adjacent bit-line cell interference on low frequency noise in NAND flash memory cell strings.
    Jo BS; Joe SM; Jeong MK; Han KR; Park SK; Lee JH
    J Nanosci Nanotechnol; 2013 Sep; 13(9):6405-8. PubMed ID: 24205670
    [TBL] [Abstract][Full Text] [Related]  

  • 18. A novel polysilicon field-enhanced nanowire thin-film transistor with the TiN-hafnia-nitride-vacuum-silicon (THNVAS) structure for nonvolatile memory applications.
    Wu CY; Liao TC; Liu YT; Yu MH; Cheng HC
    J Nanosci Nanotechnol; 2012 Jul; 12(7):5276-82. PubMed ID: 22966557
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Improving Memory Characteristics of Hydrogenated Nanocrystalline Silicon Germanium Nonvolatile Memory Devices by Controlling Germanium Contents.
    Kim J; Jang K; Phu NT; Trinh TT; Raja J; Kim T; Cho J; Kim S; Park J; Jung J; Lee YJ; Yi J
    J Nanosci Nanotechnol; 2016 May; 16(5):4984-8. PubMed ID: 27483856
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Temperature Dependence According to Grain Boundary Potential Barrier Variation in Vertical NAND Flash Cell with Polycrystalline-Silicon Channel.
    Yang HJ; Oh YT; Kim KB; Kweon JY; Lee GH; Choi ES; Park SK; Song YH
    J Nanosci Nanotechnol; 2017 Apr; 17(4):2628-632. PubMed ID: 29664250
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.