These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
241 related articles for article (PubMed ID: 21475197)
41. A graphene based frequency quadrupler. Cheng C; Huang B; Mao X; Zhang Z; Zhang Z; Geng Z; Xue P; Chen H Sci Rep; 2017 Apr; 7():46605. PubMed ID: 28418013 [TBL] [Abstract][Full Text] [Related]
42. Radio frequency and linearity performance of transistors using high-purity semiconducting carbon nanotubes. Wang C; Badmaev A; Jooyaie A; Bao M; Wang KL; Galatsis K; Zhou C ACS Nano; 2011 May; 5(5):4169-76. PubMed ID: 21517104 [TBL] [Abstract][Full Text] [Related]
43. Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms. Rumyantsev S; Liu G; Stillman W; Shur M; Balandin AA J Phys Condens Matter; 2010 Oct; 22(39):395302. PubMed ID: 21403224 [TBL] [Abstract][Full Text] [Related]
44. Ultrashort Channel Length Black Phosphorus Field-Effect Transistors. Miao J; Zhang S; Cai L; Scherr M; Wang C ACS Nano; 2015 Sep; 9(9):9236-43. PubMed ID: 26277886 [TBL] [Abstract][Full Text] [Related]
45. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. Xia F; Farmer DB; Lin YM; Avouris P Nano Lett; 2010 Feb; 10(2):715-8. PubMed ID: 20092332 [TBL] [Abstract][Full Text] [Related]
47. High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors. Liao L; Bai J; Qu Y; Lin YC; Li Y; Huang Y; Duan X Proc Natl Acad Sci U S A; 2010 Apr; 107(15):6711-5. PubMed ID: 20308584 [TBL] [Abstract][Full Text] [Related]
49. Room-temperature negative differential resistance in graphene field effect transistors: experiments and theory. Sharma P; Bernard LS; Bazigos A; Magrez A; Ionescu AM ACS Nano; 2015 Jan; 9(1):620-5. PubMed ID: 25551735 [TBL] [Abstract][Full Text] [Related]
50. Chemical Vapour Deposition of Graphene-Synthesis, Characterisation, and Applications: A Review. Saeed M; Alshammari Y; Majeed SA; Al-Nasrallah E Molecules; 2020 Aug; 25(17):. PubMed ID: 32854226 [TBL] [Abstract][Full Text] [Related]
51. Atomic-Layer-Deposition Growth of an Ultrathin HfO Xiao M; Qiu C; Zhang Z; Peng LM ACS Appl Mater Interfaces; 2017 Oct; 9(39):34050-34056. PubMed ID: 28901123 [TBL] [Abstract][Full Text] [Related]
52. Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS Chee SS; Seo D; Kim H; Jang H; Lee S; Moon SP; Lee KH; Kim SW; Choi H; Ham MH Adv Mater; 2019 Jan; 31(2):e1804422. PubMed ID: 30411825 [TBL] [Abstract][Full Text] [Related]
53. Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz. Zhong D; Shi H; Ding L; Zhao C; Liu J; Zhou J; Zhang Z; Peng LM ACS Appl Mater Interfaces; 2019 Nov; 11(45):42496-42503. PubMed ID: 31618003 [TBL] [Abstract][Full Text] [Related]
54. Low-Voltage and High-Performance Multilayer MoS Singh AK; Hwang C; Eom J ACS Appl Mater Interfaces; 2016 Dec; 8(50):34699-34705. PubMed ID: 27998114 [TBL] [Abstract][Full Text] [Related]
55. Channel length scaling in graphene field-effect transistors studied with pulsed current-voltage measurements. Meric I; Dean CR; Young AF; Baklitskaya N; Tremblay NJ; Nuckolls C; Kim P; Shepard KL Nano Lett; 2011 Mar; 11(3):1093-7. PubMed ID: 21271736 [TBL] [Abstract][Full Text] [Related]
56. Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage. Xu H; Zhang Z; Xu H; Wang Z; Wang S; Peng LM ACS Nano; 2011 Jun; 5(6):5031-7. PubMed ID: 21528892 [TBL] [Abstract][Full Text] [Related]
57. Vertically Stacked CVD-Grown 2D Heterostructure for Wafer-Scale Electronics. Kim S; Kim YC; Choi YJ; Woo HJ; Song YJ; Kang MS; Lee C; Cho JH ACS Appl Mater Interfaces; 2019 Sep; 11(38):35444-35450. PubMed ID: 31456390 [TBL] [Abstract][Full Text] [Related]
58. Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm. Vieira NC; Borme J; Machado G; Cerqueira F; Freitas PP; Zucolotto V; Peres NM; Alpuim P J Phys Condens Matter; 2016 Mar; 28(8):085302. PubMed ID: 26830656 [TBL] [Abstract][Full Text] [Related]
59. Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices. Bresnehan MS; Hollander MJ; Wetherington M; LaBella M; Trumbull KA; Cavalero R; Snyder DW; Robinson JA ACS Nano; 2012 Jun; 6(6):5234-41. PubMed ID: 22545808 [TBL] [Abstract][Full Text] [Related]
60. Improved Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors. Song SM; Bong JH; Hwang WS; Cho BJ Sci Rep; 2016 May; 6():25392. PubMed ID: 27142861 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]