144 related articles for article (PubMed ID: 21648419)
21. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics.
Cheng R; Jiang S; Chen Y; Liu Y; Weiss N; Cheng HC; Wu H; Huang Y; Duan X
Nat Commun; 2014 Oct; 5():5143. PubMed ID: 25295573
[TBL] [Abstract][Full Text] [Related]
22. Graphene-graphite oxide field-effect transistors.
Standley B; Mendez A; Schmidgall E; Bockrath M
Nano Lett; 2012 Mar; 12(3):1165-9. PubMed ID: 22380722
[TBL] [Abstract][Full Text] [Related]
23. A Robust Highly Aligned DNA Nanowire Array-Enabled Lithography for Graphene Nanoribbon Transistors.
Kang SH; Hwang WS; Lin Z; Kwon SH; Hong SW
Nano Lett; 2015 Dec; 15(12):7913-20. PubMed ID: 26569342
[TBL] [Abstract][Full Text] [Related]
24. Large-scale graphene transistors with enhanced performance and reliability based on interface engineering by phenylsilane self-assembled monolayers.
Liu Z; Bol AA; Haensch W
Nano Lett; 2011 Feb; 11(2):523-8. PubMed ID: 21171630
[TBL] [Abstract][Full Text] [Related]
25. Self-aligned T-gate high-purity semiconducting carbon nanotube RF transistors operated in quasi-ballistic transport and quantum capacitance regime.
Che Y; Badmaev A; Jooyaie A; Wu T; Zhang J; Wang C; Galatsis K; Enaya HA; Zhou C
ACS Nano; 2012 Aug; 6(8):6936-43. PubMed ID: 22768974
[TBL] [Abstract][Full Text] [Related]
26. Direct growth of doping-density-controlled hexagonal graphene on SiO2 substrate by rapid-heating plasma CVD.
Kato T; Hatakeyama R
ACS Nano; 2012 Oct; 6(10):8508-15. PubMed ID: 22971147
[TBL] [Abstract][Full Text] [Related]
27. Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.
Liao L; Bai J; Cheng R; Lin YC; Jiang S; Huang Y; Duan X
Nano Lett; 2010 May; 10(5):1917-21. PubMed ID: 20380441
[TBL] [Abstract][Full Text] [Related]
28. High-frequency graphene voltage amplifier.
Han SJ; Jenkins KA; Valdes Garcia A; Franklin AD; Bol AA; Haensch W
Nano Lett; 2011 Sep; 11(9):3690-3. PubMed ID: 21805988
[TBL] [Abstract][Full Text] [Related]
29. Radio Frequency Transistors and Circuits Based on CVD MoS2.
Sanne A; Ghosh R; Rai A; Yogeesh MN; Shin SH; Sharma A; Jarvis K; Mathew L; Rao R; Akinwande D; Banerjee S
Nano Lett; 2015 Aug; 15(8):5039-45. PubMed ID: 26134588
[TBL] [Abstract][Full Text] [Related]
30. Suspended graphene sensors with improved signal and reduced noise.
Cheng Z; Li Q; Li Z; Zhou Q; Fang Y
Nano Lett; 2010 May; 10(5):1864-8. PubMed ID: 20373779
[TBL] [Abstract][Full Text] [Related]
31. Benzocyclobutene (BCB) Polymer as Amphibious Buffer Layer for Graphene Field-Effect Transistor.
Wu Y; Zou J; Huo S; Lu H; Kong Y; Chen T; Wu W; Xu J
J Nanosci Nanotechnol; 2015 Aug; 15(8):5706-10. PubMed ID: 26369142
[TBL] [Abstract][Full Text] [Related]
32. Current saturation in submicrometer graphene transistors with thin gate dielectric: experiment, simulation, and theory.
Han SJ; Reddy D; Carpenter GD; Franklin AD; Jenkins KA
ACS Nano; 2012 Jun; 6(6):5220-6. PubMed ID: 22582702
[TBL] [Abstract][Full Text] [Related]
33. Quantum behavior of graphene transistors near the scaling limit.
Wu Y; Perebeinos V; Lin YM; Low T; Xia F; Avouris P
Nano Lett; 2012 Mar; 12(3):1417-23. PubMed ID: 22316333
[TBL] [Abstract][Full Text] [Related]
34. High-performance and high-sensitivity applications of graphene transistors with self-assembled monolayers.
Yeh CH; Kumar V; Moyano DR; Wen SH; Parashar V; Hsiao SH; Srivastava A; Saxena PS; Huang KP; Chang CC; Chiu PW
Biosens Bioelectron; 2016 Mar; 77():1008-15. PubMed ID: 26547427
[TBL] [Abstract][Full Text] [Related]
35. Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz.
Cao Y; Brady GJ; Gui H; Rutherglen C; Arnold MS; Zhou C
ACS Nano; 2016 Jul; 10(7):6782-90. PubMed ID: 27327074
[TBL] [Abstract][Full Text] [Related]
36. Stretchable graphene transistors with printed dielectrics and gate electrodes.
Lee SK; Kim BJ; Jang H; Yoon SC; Lee C; Hong BH; Rogers JA; Cho JH; Ahn JH
Nano Lett; 2011 Nov; 11(11):4642-6. PubMed ID: 21973013
[TBL] [Abstract][Full Text] [Related]
37. Breakdown of high-performance monolayer MoS2 transistors.
Lembke D; Kis A
ACS Nano; 2012 Nov; 6(11):10070-5. PubMed ID: 23039374
[TBL] [Abstract][Full Text] [Related]
38. Quantum capacitance limited vertical scaling of graphene field-effect transistor.
Xu H; Zhang Z; Wang Z; Wang S; Liang X; Peng LM
ACS Nano; 2011 Mar; 5(3):2340-7. PubMed ID: 21323320
[TBL] [Abstract][Full Text] [Related]
39. Integrated circuits based on bilayer MoSâ‚‚ transistors.
Wang H; Yu L; Lee YH; Shi Y; Hsu A; Chin ML; Li LJ; Dubey M; Kong J; Palacios T
Nano Lett; 2012 Sep; 12(9):4674-80. PubMed ID: 22862813
[TBL] [Abstract][Full Text] [Related]
40. Label-free detection of DNA hybridization using transistors based on CVD grown graphene.
Chen TY; Loan PT; Hsu CL; Lee YH; Tse-Wei Wang J; Wei KH; Lin CT; Li LJ
Biosens Bioelectron; 2013 Mar; 41():103-9. PubMed ID: 22944023
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
