302 related articles for article (PubMed ID: 21680961)
21. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.
Su XB; Ding Y; Ma B; Zhang KL; Chen ZS; Li JL; Cui XR; Xu YQ; Ni HQ; Niu ZC
Nanoscale Res Lett; 2018 Feb; 13(1):59. PubMed ID: 29468483
[TBL] [Abstract][Full Text] [Related]
22. Role of re-growth interface preparation process for spectral line-width reduction of single InAs site-controlled quantum dots.
Herranz J; Wewior L; Alén B; Fuster D; González L; González Y
Nanotechnology; 2015 May; 26(19):195301. PubMed ID: 25895541
[TBL] [Abstract][Full Text] [Related]
23. Direct integration of III-V compound semiconductor nanostructures on silicon by selective epitaxy.
Zhao Z; Yadavalli K; Hao Z; Wang KL
Nanotechnology; 2009 Jan; 20(3):035304. PubMed ID: 19417293
[TBL] [Abstract][Full Text] [Related]
24. Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm.
Liu WS; Tseng HL; Kuo PC
Opt Express; 2014 Aug; 22(16):18860-9. PubMed ID: 25320972
[TBL] [Abstract][Full Text] [Related]
25. Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.
Du Y; Wei W; Xu B; Wang G; Li B; Miao Y; Zhao X; Kong Z; Lin H; Yu J; Su J; Dong Y; Wang W; Ye T; Zhang J; Radamson HH
Micromachines (Basel); 2022 Sep; 13(10):. PubMed ID: 36295932
[TBL] [Abstract][Full Text] [Related]
26. 1.1-μm InAs/GaAs quantum-dot light-emitting transistors grown by molecular beam epitaxy.
Wu CH; Chen HA; Lin SY; Wu CH
Opt Lett; 2015 Aug; 40(16):3747-9. PubMed ID: 26274650
[TBL] [Abstract][Full Text] [Related]
27. All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).
Kwoen J; Jang B; Lee J; Kageyama T; Watanabe K; Arakawa Y
Opt Express; 2018 Apr; 26(9):11568-11576. PubMed ID: 29716075
[TBL] [Abstract][Full Text] [Related]
28. The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy.
Balzarotti A
Nanotechnology; 2008 Dec; 19(50):505701. PubMed ID: 19942778
[TBL] [Abstract][Full Text] [Related]
29. Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires.
Haas F; Sladek K; Winden A; von der Ahe M; Weirich TE; Rieger T; Lüth H; Grützmacher D; Schäpers T; Hardtdegen H
Nanotechnology; 2013 Mar; 24(8):085603. PubMed ID: 23385879
[TBL] [Abstract][Full Text] [Related]
30. 1.3 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces.
Tanabe K; Watanabe K; Arakawa Y
Opt Express; 2012 Dec; 20(26):B315-21. PubMed ID: 23262867
[TBL] [Abstract][Full Text] [Related]
31. Mechanisms of molecular beam epitaxy growth in InAs/InP nanowire heterostructures.
Haapamaki CM; Lapierre RR
Nanotechnology; 2011 Aug; 22(33):335602. PubMed ID: 21788682
[TBL] [Abstract][Full Text] [Related]
32. Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy.
Koblmüller G; Hertenberger S; Vizbaras K; Bichler M; Bao F; Zhang JP; Abstreiter G
Nanotechnology; 2010 Sep; 21(36):365602. PubMed ID: 20702932
[TBL] [Abstract][Full Text] [Related]
33. Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition.
Pashchenko AS; Lunin LS; Danilina EM; Chebotarev SN
Beilstein J Nanotechnol; 2018; 9():2794-2801. PubMed ID: 30498652
[TBL] [Abstract][Full Text] [Related]
34. Stacked GaAs quantum dots fabricated by refilling of self-organized nanoholes: optical properties and post-growth annealing.
Polojärvi V; Schramm A; Guina M; Stemmann A; Heyn C
Nanotechnology; 2011 Mar; 22(10):105603. PubMed ID: 21289401
[TBL] [Abstract][Full Text] [Related]
35. Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices.
Golovynskyi S; Seravalli L; Datsenko O; Kozak O; Kondratenko SV; Trevisi G; Frigeri P; Gombia E; Lavoryk SR; Golovynska I; Ohulchanskyy TY; Qu J
Nanoscale Res Lett; 2017 Oct; 12(1):559. PubMed ID: 28983869
[TBL] [Abstract][Full Text] [Related]
36. Molecular beam epitaxy growth methods of wavelength control for InAs/(In)GaAsN/GaAs heterostructures.
Mamutin VV; Egorov AY; Kryzhanovskaya NV
Nanotechnology; 2008 Nov; 19(44):445715. PubMed ID: 21832756
[TBL] [Abstract][Full Text] [Related]
37. Enhanced Photoluminescence of 1.3 μm InAs Quantum Dots Grown on Ultrathin GaAs Buffer/Si Templates by Suppressing Interfacial Defect Emission.
Kim Y; Chu RJ; Ryu G; Woo S; Lung QND; Ahn DH; Han JH; Choi WJ; Jung D
ACS Appl Mater Interfaces; 2022 Oct; 14(39):45051-45058. PubMed ID: 36162121
[TBL] [Abstract][Full Text] [Related]
38. High quality InAs quantum dots grown on patterned Si with a GaAs buffer layer.
Wang Y; Zou J; Zhao ZM; Hao Z; Wang KL
Nanotechnology; 2009 Jul; 20(30):305301. PubMed ID: 19581699
[TBL] [Abstract][Full Text] [Related]
39. Site-controlled growth of InP/GaInP quantum dots on GaAs substrates.
Baumann V; Stumpf F; Steinl T; Forchel A; Schneider C; Höfling S; Kamp M
Nanotechnology; 2012 Sep; 23(37):375301. PubMed ID: 22922443
[TBL] [Abstract][Full Text] [Related]
40. Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE.
Halder N; Suseendran J; Chakrabarti S; Herrera M; Bonds M; Browning ND
J Nanosci Nanotechnol; 2010 Aug; 10(8):5202-6. PubMed ID: 21125871
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
