These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

72 related articles for article (PubMed ID: 21690766)

  • 1. Nanoferroelectrics: statics and dynamics.
    Scott JF
    J Phys Condens Matter; 2006 May; 18(17):R361-86. PubMed ID: 21690766
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Organic non-volatile memories from ferroelectric phase-separated blends.
    Asadi K; de Leeuw DM; de Boer B; Blom PW
    Nat Mater; 2008 Jul; 7(7):547-50. PubMed ID: 18552851
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Applications of modern ferroelectrics.
    Scott JF
    Science; 2007 Feb; 315(5814):954-9. PubMed ID: 17303745
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Key integration technologies for nanoscale FRAMs.
    Jung DJ; Kim HH; Kim K
    IEEE Trans Ultrason Ferroelectr Freq Control; 2007 Dec; 54(12):2535-40. PubMed ID: 18276551
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Progress in ferroelectric memory technology.
    Geideman WA
    IEEE Trans Ultrason Ferroelectr Freq Control; 1991; 38(6):704-11. PubMed ID: 18267637
    [TBL] [Abstract][Full Text] [Related]  

  • 6. A simple device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory.
    Lee MJ; Ahn SE; Lee CB; Kim CJ; Jeon S; Chung UI; Yoo IK; Park GS; Han S; Hwang IR; Park BH
    ACS Appl Mater Interfaces; 2011 Nov; 3(11):4475-9. PubMed ID: 21988144
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Anomalous properties in ferroelectrics induced by atomic ordering.
    George AM; Iñiguez J; Bellaiche L
    Nature; 2001 Sep; 413(6851):54-7. PubMed ID: 11544522
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Real-time studies of ferroelectric domain switching: a review.
    Li L; Xie L; Pan X
    Rep Prog Phys; 2019 Dec; 82(12):126502. PubMed ID: 31185460
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Ferroelectric memories.
    Scott JF; Paz de Araujo CA
    Science; 1989 Dec; 246(4936):1400-5. PubMed ID: 17755995
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide.
    Lee TJ; Chang CW; Hahm SG; Kim K; Park S; Kim DM; Kim J; Kwon WS; Liou GS; Ree M
    Nanotechnology; 2009 Apr; 20(13):135204. PubMed ID: 19420490
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Unusual phase transitions in ferroelectric nanodisks and nanorods.
    Naumov II; Bellaiche L; Fu H
    Nature; 2004 Dec; 432(7018):737-40. PubMed ID: 15592408
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Spintronics.
    Johnson M
    J Phys Chem B; 2005 Aug; 109(30):14278-91. PubMed ID: 16852795
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Electrical and reliability properties of PZT thin films for ULSI DRAM applications.
    Carrano J; Sudhama C; Chikarmane V; Lee J; Tasch A; Shepherd W; Abt N
    IEEE Trans Ultrason Ferroelectr Freq Control; 1991; 38(6):690-703. PubMed ID: 18267636
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Nucleation and growth mechanism of ferroelectric domain-wall motion.
    Shin YH; Grinberg I; Chen IW; Rappe AM
    Nature; 2007 Oct; 449(7164):881-4. PubMed ID: 17922002
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Polarization dynamics and non-equilibrium switching processes in ferroelectrics.
    Vopsaroiu M; Weaver PM; Cain MG; Reece M; Chong KB
    IEEE Trans Ultrason Ferroelectr Freq Control; 2011 Sep; 58(9):1867-73. PubMed ID: 21937319
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Novel room temperature multiferroics for random access memory elements.
    Kumar A; Katiyar RS; Scott JF
    IEEE Trans Ultrason Ferroelectr Freq Control; 2010 Oct; 57(10):2237-42. PubMed ID: 20889411
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Design for an optical random access memory.
    Murdocca MJ; Sugla B
    Appl Opt; 1989 Jan; 28(1):182-8. PubMed ID: 20548447
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes.
    Fu WY; Xu Z; Liu L; Bai XD; Wang EG
    Nanotechnology; 2009 Nov; 20(47):475305. PubMed ID: 19875879
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications.
    Hoffman J; Hong X; Ahn CH
    Nanotechnology; 2011 Jun; 22(25):254014. PubMed ID: 21572192
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Nonvolatile memory devices based on few-layer graphene films.
    Doh YJ; Yi GC
    Nanotechnology; 2010 Mar; 21(10):105204. PubMed ID: 20160337
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 4.