600 related articles for article (PubMed ID: 21699197)
1. Oxide-confined formation of germanium nanowire heterostructures for high-performance transistors.
Tang J; Wang CY; Xiu F; Lang M; Chu LW; Tsai CJ; Chueh YL; Chen LJ; Wang KL
ACS Nano; 2011 Jul; 5(7):6008-15. PubMed ID: 21699197
[TBL] [Abstract][Full Text] [Related]
2. Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors.
Tang J; Wang CY; Xiu F; Hong AJ; Chen S; Wang M; Zeng C; Yang HJ; Tuan HY; Tsai CJ; Chen LJ; Wang KL
Nanotechnology; 2010 Dec; 21(50):505704. PubMed ID: 21098938
[TBL] [Abstract][Full Text] [Related]
3. Ferromagnetic germanide in Ge nanowire transistors for spintronics application.
Tang J; Wang CY; Hung MH; Jiang X; Chang LT; He L; Liu PH; Yang HJ; Tuan HY; Chen LJ; Wang KL
ACS Nano; 2012 Jun; 6(6):5710-7. PubMed ID: 22658951
[TBL] [Abstract][Full Text] [Related]
4. Ge/Si nanowire heterostructures as high-performance field-effect transistors.
Xiang J; Lu W; Hu Y; Wu Y; Yan H; Lieber CM
Nature; 2006 May; 441(7092):489-93. PubMed ID: 16724062
[TBL] [Abstract][Full Text] [Related]
5. Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.
Xu H; Zhang Z; Xu H; Wang Z; Wang S; Peng LM
ACS Nano; 2011 Jun; 5(6):5031-7. PubMed ID: 21528892
[TBL] [Abstract][Full Text] [Related]
6. Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures.
Kral S; Zeiner C; Stöger-Pollach M; Bertagnolli E; den Hertog MI; Lopez-Haro M; Robin E; El Hajraoui K; Lugstein A
Nano Lett; 2015 Jul; 15(7):4783-7. PubMed ID: 26052733
[TBL] [Abstract][Full Text] [Related]
7. Flexible, low-voltage, and low-hysteresis PbSe nanowire field-effect transistors.
Kim DK; Lai Y; Vemulkar TR; Kagan CR
ACS Nano; 2011 Dec; 5(12):10074-83. PubMed ID: 22084980
[TBL] [Abstract][Full Text] [Related]
8. Electrical transport of bottom-up grown single-crystal Si(1-x)Ge(x) nanowire.
Yang WF; Lee SJ; Liang GC; Whang SJ; Kwong DL
Nanotechnology; 2008 Jun; 19(22):225203. PubMed ID: 21825755
[TBL] [Abstract][Full Text] [Related]
9. Fabrication and device characterization of omega-shaped-gate ZnO nanowire field-effect transistors.
Keem K; Jeong DY; Kim S; Lee MS; Yeo IS; Chung UI; Moon JT
Nano Lett; 2006 Jul; 6(7):1454-8. PubMed ID: 16834428
[TBL] [Abstract][Full Text] [Related]
10. ZnO nanowire transistors.
Goldberger J; Sirbuly DJ; Law M; Yang P
J Phys Chem B; 2005 Jan; 109(1):9-14. PubMed ID: 16850973
[TBL] [Abstract][Full Text] [Related]
11. High performance horizontal gate-all-around silicon nanowire field-effect transistors.
Shirak O; Shtempluck O; Kotchtakov V; Bahir G; Yaish YE
Nanotechnology; 2012 Oct; 23(39):395202. PubMed ID: 22971804
[TBL] [Abstract][Full Text] [Related]
12. Direct-write fabrication of a nanoscale digital logic element on a single nanowire.
Roy S; Gao Z
Nanotechnology; 2010 Jun; 21(24):245306. PubMed ID: 20498519
[TBL] [Abstract][Full Text] [Related]
13. A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications.
Lin CY; Chen CF; Chang YM; Yang SH; Lee KC; Wu WW; Jian WB; Lin YF
Small; 2019 Aug; 15(33):e1900865. PubMed ID: 31264786
[TBL] [Abstract][Full Text] [Related]
14. NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers.
Yeom D; Keem K; Kang J; Jeong DY; Yoon C; Kim D; Kim S
Nanotechnology; 2008 Jul; 19(26):265202. PubMed ID: 21828674
[TBL] [Abstract][Full Text] [Related]
15. Epitaxial core-shell and core-multishell nanowire heterostructures.
Lauhon LJ; Gudiksen MS; Wang D; Lieber CM
Nature; 2002 Nov; 420(6911):57-61. PubMed ID: 12422212
[TBL] [Abstract][Full Text] [Related]
16. Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance.
Min SW; Lee HS; Choi HJ; Park MK; Nam T; Kim H; Ryu S; Im S
Nanoscale; 2013 Jan; 5(2):548-51. PubMed ID: 23233087
[TBL] [Abstract][Full Text] [Related]
17. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
Yoon A; Hong WK; Lee T
J Nanosci Nanotechnol; 2007 Nov; 7(11):4101-5. PubMed ID: 18047128
[TBL] [Abstract][Full Text] [Related]
18. High-performance ZnO nanowire transistors with aluminum top-gate electrodes and naturally formed hybrid self-assembled monolayer/AlO(x) gate dielectric.
Kälblein D; Ryu H; Ante F; Fenk B; Hahn K; Kern K; Klauk H
ACS Nano; 2014 Jul; 8(7):6840-8. PubMed ID: 24940627
[TBL] [Abstract][Full Text] [Related]
19. Solution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric.
Opoku C; Hoettges KF; Hughes MP; Stolojan V; Silva SR; Shkunov M
Nanotechnology; 2013 Oct; 24(40):405203. PubMed ID: 24029562
[TBL] [Abstract][Full Text] [Related]
20. Metal/nanowire contacts, quantum confinement, and their roles in the generation of new, gigantic actions in nanowire transistors.
Mohammad SN
Nanotechnology; 2013 Nov; 24(45):455201. PubMed ID: 24129340
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
