151 related articles for article (PubMed ID: 21727589)
1. Self-assembled Al(x)Ga(1-x)N nanorods grown on Si(001) substrates by using plasma-assisted molecular beam epitaxy.
Park YS; Hwang BR; Lee JC; Im H; Cho HY; Kang TW; Na JH; Park CM
Nanotechnology; 2006 Sep; 17(18):4640-3. PubMed ID: 21727589
[TBL] [Abstract][Full Text] [Related]
2. Optical properties of GaN nanorods grown by molecular-beam epitaxy; dependence on growth time.
Park CM; Park YS; Im H; Kang TW
Nanotechnology; 2006 Feb; 17(4):952-5. PubMed ID: 21727365
[TBL] [Abstract][Full Text] [Related]
3. Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.
Park YS; Kang TW; Taylor RA
Nanotechnology; 2008 Nov; 19(47):475402. PubMed ID: 21836271
[TBL] [Abstract][Full Text] [Related]
4. InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy.
Vajpeyi AP; Ajagunna AO; Tsagaraki K; Androulidaki M; Georgakilas A
Nanotechnology; 2009 Aug; 20(32):325605. PubMed ID: 19620761
[TBL] [Abstract][Full Text] [Related]
5. Structural and optical properties of self-assembled AlN nanowires grown on SiO
Gačević Ž; Grandal J; Guo Q; Kirste R; Varela M; Sitar Z; Sánchez García MA
Nanotechnology; 2021 May; 32(19):195601. PubMed ID: 33535196
[TBL] [Abstract][Full Text] [Related]
6. Structural and compositional evolutions of InxAl1-xN core-shell nanorods grown on Si(111) substrates by reactive magnetron sputter epitaxy.
Serban EA; Åke Persson PO; Poenaru I; Junaid M; Hultman L; Birch J; Hsiao CL
Nanotechnology; 2015 May; 26(21):215602. PubMed ID: 25944838
[TBL] [Abstract][Full Text] [Related]
7. A structural investigation of highly ordered catalyst- and mask-free GaN nanorods.
Figge S; Aschenbrenner T; Kruse C; Kunert G; Schowalter M; Rosenauer A; Hommel D
Nanotechnology; 2011 Jan; 22(2):025603. PubMed ID: 21139192
[TBL] [Abstract][Full Text] [Related]
8. Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate.
Borysiuk J; Zytkiewicz ZR; Sobanska M; Wierzbicka A; Klosek K; Korona KP; Perkowska PS; Reszka A
Nanotechnology; 2014 Apr; 25(13):135610. PubMed ID: 24598248
[TBL] [Abstract][Full Text] [Related]
9. Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.
Albert S; Bengoechea-Encabo A; Sánchez-García MA; Kong X; Trampert A; Calleja E
Nanotechnology; 2013 May; 24(17):175303. PubMed ID: 23558410
[TBL] [Abstract][Full Text] [Related]
10. Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous Al
Sobanska M; Zytkiewicz ZR; Calabrese G; Geelhaar L; Fernández-Garrido S
Nanotechnology; 2019 Apr; 30(15):154002. PubMed ID: 30641512
[TBL] [Abstract][Full Text] [Related]
11. Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates.
Gas K; Sadowski J; Kasama T; Siusys A; Zaleszczyk W; Wojciechowski T; Morhange JF; Altintaş A; Xu HQ; Szuszkiewicz W
Nanoscale; 2013 Aug; 5(16):7410-8. PubMed ID: 23832244
[TBL] [Abstract][Full Text] [Related]
12. Molecular structures of chloro(phthalocyaninato)-aluminum(III) and -gallium(III) as determined by gas electron diffraction and quantum chemical calculations: quantum chemical calculations on fluoro(phthalocyaninato)-aluminum(III) and -gallium(III), chloro(tetrakis(1,2,5-thiadiazole)porphyrazinato)-aluminum(III) and -gallium(III) and comparison with their X-ray structures.
Strenalyuk T; Samdal S; Volden HV
J Phys Chem A; 2008 Sep; 112(38):9075-82. PubMed ID: 18754601
[TBL] [Abstract][Full Text] [Related]
13. AlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy.
Zhang D; Tao T; Sun H; Li S; Jia H; Yu H; Shao P; Li Z; Wu Y; Xie Z; Wang K; Long S; Liu B; Zhang R; Zheng Y
Nanomaterials (Basel); 2022 Jul; 12(14):. PubMed ID: 35889730
[TBL] [Abstract][Full Text] [Related]
14. Compositional variations in In(0.5)Ga(0.5)N nanorods grown by molecular beam epitaxy.
Cherns D; Webster RF; Novikov SV; Foxon CT; Fischer AM; Ponce FA; Haigh SJ
Nanotechnology; 2014 May; 25(21):215705. PubMed ID: 24785272
[TBL] [Abstract][Full Text] [Related]
15. InAs(1-x)P(x) nanowires grown by catalyst-free molecular-beam epitaxy.
Isakov I; Panfilova M; Sourribes MJ; Tileli V; Porter AE; Warburton PA
Nanotechnology; 2013 Mar; 24(8):085707. PubMed ID: 23386103
[TBL] [Abstract][Full Text] [Related]
16. Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy.
Bauer B; Rudolph A; Soda M; Fontcuberta i Morral A; Zweck J; Schuh D; Reiger E
Nanotechnology; 2010 Oct; 21(43):435601. PubMed ID: 20876983
[TBL] [Abstract][Full Text] [Related]
17. Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studies.
Liliental-Weber Z; Zakharov DN; Yu KM; Ager JW; Walukiewicz W; Haller EE; Lu H; Schaff WJ
J Electron Microsc (Tokyo); 2005 Jun; 54(3):243-50. PubMed ID: 16123056
[TBL] [Abstract][Full Text] [Related]
18. Growth and characterization of ternary AlGaN alloy nanocones across the entire composition range.
He C; Wu Q; Wang X; Zhang Y; Yang L; Liu N; Zhao Y; Lu Y; Hu Z
ACS Nano; 2011 Feb; 5(2):1291-6. PubMed ID: 21284401
[TBL] [Abstract][Full Text] [Related]
19. Zinc blende GaAsSb nanowires grown by molecular beam epitaxy.
Dheeraj DL; Patriarche G; Largeau L; Zhou HL; van Helvoort AT; Glas F; Harmand JC; Fimland BO; Weman H
Nanotechnology; 2008 Jul; 19(27):275605. PubMed ID: 21828712
[TBL] [Abstract][Full Text] [Related]
20. Structural and chemical evolution of the spontaneous core-shell structures of AlxGa1-xN/GaN nanowires.
Fath Allah R; Ben T; González D
Microsc Microanal; 2014 Aug; 20(4):1254-61. PubMed ID: 24698205
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
