These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
270 related articles for article (PubMed ID: 21747565)
1. High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask. Cho CY; Kwon MK; Park IK; Hong SH; Kim JJ; Park SE; Kim ST; Park SJ Opt Express; 2011 Jul; 19 Suppl 4():A943-8. PubMed ID: 21747565 [TBL] [Abstract][Full Text] [Related]
2. High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks. Chiu CH; Lin CC; Han HV; Liu CY; Chen YH; Lan YP; Yu P; Kuo HC; Lu TC; Wang SC; Chang CY Nanotechnology; 2012 Feb; 23(4):045303. PubMed ID: 22222308 [TBL] [Abstract][Full Text] [Related]
3. InGaN-based light-emitting diodes with an embedded conical air-voids structure. Huang YC; Lin CF; Chen SH; Dai JJ; Wang GM; Huang KP; Chen KT; Hsu YH Opt Express; 2011 Jan; 19 Suppl 1():A57-63. PubMed ID: 21263713 [TBL] [Abstract][Full Text] [Related]
4. Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO(2). Cho CY; Lee JB; Lee SJ; Han SH; Park TY; Kim JW; Kim YC; Park SJ Opt Express; 2010 Jan; 18(2):1462-8. PubMed ID: 20173974 [TBL] [Abstract][Full Text] [Related]
5. Enhanced air-cavity effect of periodically oriented embedded air protrusions for high-efficiency InGaN/GaN light-emitting diodes. Kim HG; Kim HK; Kim HY; Jeong H; Chandramohan S; Uthirakumar P; Jeong MS; Lee JS; Suh EK; Hong CH Opt Lett; 2010 Sep; 35(18):3012-4. PubMed ID: 20847762 [TBL] [Abstract][Full Text] [Related]
6. InGaN light emitting diodes with a laser-treated tapered GaN structure. Huang WC; Lin CF; Hsieh TH; Chen SH; Lin MS; Chen KT; Lin CM; Chen SH; Han P Opt Express; 2011 Sep; 19 Suppl 5():A1126-34. PubMed ID: 21935255 [TBL] [Abstract][Full Text] [Related]
7. Enhanced optical output performance in InGaN/GaN light-emitting diode embedded with SiO₂nanoparticles. Jeon DW; Jang LW; Cho HS; Kwon KS; Dong MJ; Polyakov AY; Ju JW; Chung TH; Baek JH; Lee IH Opt Express; 2014 Sep; 22(18):21454-9. PubMed ID: 25321523 [TBL] [Abstract][Full Text] [Related]
8. Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays. Kang JH; Kim HG; Chandramohan S; Kim HK; Kim HY; Ryu JH; Park YJ; Beak YS; Lee JS; Park JS; Lysak VV; Hong CH Opt Lett; 2012 Jan; 37(1):88-90. PubMed ID: 22212800 [TBL] [Abstract][Full Text] [Related]
9. Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes. Wei T; Ji X; Wu K; Zheng H; Du C; Chen Y; Yan Q; Zhao L; Zhou Z; Wang J; Li J Opt Lett; 2014 Jan; 39(2):379-82. PubMed ID: 24562151 [TBL] [Abstract][Full Text] [Related]
10. Improved light output from InGaN LEDs by laser-induced dumbbell-like air-voids. Zhang Y; Xie H; Zheng H; Dong P; Yang H; Yi X; Wang G Opt Express; 2013 Dec; 21(26):32582-8. PubMed ID: 24514851 [TBL] [Abstract][Full Text] [Related]
11. Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs. Soh CB; Wang B; Chua SJ; Lin VK; Tan RJ; Tripathy S Nanotechnology; 2008 Oct; 19(40):405303. PubMed ID: 21832613 [TBL] [Abstract][Full Text] [Related]
12. Effects of spin-polarized injection and photo-ionization of MnZnO film on GaN-based light-emitting diodes. Chen LC; Tien CH; Mu CS Opt Express; 2010 Feb; 18(3):2302-8. PubMed ID: 20174059 [TBL] [Abstract][Full Text] [Related]
13. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer. Lee KJ; Chun J; Kim SJ; Oh S; Ha CS; Park JW; Lee SJ; Song JC; Baek JH; Park SJ Opt Express; 2016 Mar; 24(5):4391-4398. PubMed ID: 29092267 [TBL] [Abstract][Full Text] [Related]
15. Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates. Horng RH; Wu BR; Tien CH; Ou SL; Yang MH; Kuo HC; Wuu DS Opt Express; 2014 Jan; 22 Suppl 1():A179-87. PubMed ID: 24921994 [TBL] [Abstract][Full Text] [Related]
16. Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers. Lee KJ; Kim SJ; Kim JJ; Hwang K; Kim ST; Park SJ Opt Express; 2014 Jun; 22 Suppl 4():A1164-73. PubMed ID: 24978079 [TBL] [Abstract][Full Text] [Related]
17. Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes. Lu T; Li S; Zhang K; Liu C; Yin Y; Wu L; Wang H; Yang X; Xiao G; Zhou Y Opt Express; 2011 Sep; 19(19):18319-23. PubMed ID: 21935200 [TBL] [Abstract][Full Text] [Related]
18. InGaN light-emitting diodes with oblique sidewall facets formed by selective growth on SiO₂ patterned GaN film. Sheu JK; Chang KH; Tu SJ; Lee ML; Yang CC; Hsu CK; Lai WC Opt Express; 2010 Nov; 18 Suppl 4():A562-7. PubMed ID: 21165089 [TBL] [Abstract][Full Text] [Related]
19. Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper. Lau KM; Wong KM; Zou X; Chen P Opt Express; 2011 Jul; 19 Suppl 4():A956-61. PubMed ID: 21747567 [TBL] [Abstract][Full Text] [Related]
20. Investigation of low-temperature electroluminescence of InGaN/GaN based nanorod light emitting arrays. Huang YY; Chen LY; Chang CH; Sun YH; Cheng YW; Ke MY; Lu YH; Kuo HC; Huang J Nanotechnology; 2011 Jan; 22(4):045202. PubMed ID: 21157011 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]