232 related articles for article (PubMed ID: 21776718)
1. Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.
Panchal AK; Rai DK; Solanki CS
J Nanosci Nanotechnol; 2011 Apr; 11(4):3414-7. PubMed ID: 21776718
[TBL] [Abstract][Full Text] [Related]
2. Study of nanocrystalline silicon films synthesized Below 100 degrees C by catalytic chemical vapor deposition.
Song TH; Keum KS; Hong WS
J Nanosci Nanotechnol; 2013 Nov; 13(11):7519-23. PubMed ID: 24245284
[TBL] [Abstract][Full Text] [Related]
3. Highly conducting phosphorous doped Nc-Si:H thin films deposited at high deposition rate by hot-wire chemical vapor deposition method.
Waman VS; Kamble MM; Ghosh SS; Mayabadi A; Sathe VG; Amalnekar DP; Pathan HM; Jadkar SR
J Nanosci Nanotechnol; 2012 Nov; 12(11):8459-66. PubMed ID: 23421231
[TBL] [Abstract][Full Text] [Related]
4. Optical and structural properties of nanocrystalline silicon potential well structure fabricated by cat-chemical vapor deposition at 200 degrees C.
Kang SY; Keum KS; Song TH; Hong WS
J Nanosci Nanotechnol; 2013 Nov; 13(11):7568-71. PubMed ID: 24245293
[TBL] [Abstract][Full Text] [Related]
5. Suppression of electrical breakdown in silicon nitride films deposited by catalytic chemical vapor deposition at temperatures below 200 degrees C.
Lee KM; Hong WS
J Nanosci Nanotechnol; 2011 Jan; 11(1):815-9. PubMed ID: 21446552
[TBL] [Abstract][Full Text] [Related]
6. Characterization of intrinsic a-Si:H films prepared by inductively coupled plasma chemical vapor deposition for solar cell applications.
Jeong C; Boo S; Jeon M; Kamisako K
J Nanosci Nanotechnol; 2007 Nov; 7(11):4169-73. PubMed ID: 18047144
[TBL] [Abstract][Full Text] [Related]
7. Properties of silicon nanoparticles embedded in SiNx deposited by microwave-PECVD.
Delachat F; Carrada M; Ferblantier G; Grob JJ; Slaoui A
Nanotechnology; 2009 Oct; 20(41):415608. PubMed ID: 19762938
[TBL] [Abstract][Full Text] [Related]
8. Crystallization of amorphous Si nanoclusters in SiO(x) films using femtosecond laser pulse annealings.
Korchagina TT; Gutakovsky AK; Fedina LI; Neklyudova MA; Volodin VA
J Nanosci Nanotechnol; 2012 Nov; 12(11):8694-9. PubMed ID: 23421268
[TBL] [Abstract][Full Text] [Related]
9. Structural evolution of nanocrystalline silicon thin films synthesized in high-density, low-temperature reactive plasmas.
Cheng Q; Xu S; Ostrikov KK
Nanotechnology; 2009 May; 20(21):215606. PubMed ID: 19423937
[TBL] [Abstract][Full Text] [Related]
10. Thin film solar cells with Si nanocrystallites embedded in amorphous intrinsic layers by hot-wire chemical vapor deposition.
Park S; Parida B; Kim K
J Nanosci Nanotechnol; 2013 May; 13(5):3397-402. PubMed ID: 23858866
[TBL] [Abstract][Full Text] [Related]
11. Vertical charge-carrier transport in Si nanocrystal/SiO2 multilayer structures.
Osinniy V; Lysgaard S; Kolkovsky V; Pankratov V; Nylandsted Larsen A
Nanotechnology; 2009 May; 20(19):195201. PubMed ID: 19420632
[TBL] [Abstract][Full Text] [Related]
12. Polymorphous silicon thin films obtained by plasma-enhanced chemical vapor deposition using dichlorosilane as silicon precursor.
Remolina A; Monroy BM; García-Sánchez MF; Ponce A; Bizarro M; Alonso JC; Ortiz A; Santana G
Nanotechnology; 2009 Jun; 20(24):245604. PubMed ID: 19471076
[TBL] [Abstract][Full Text] [Related]
13. [Spectral Characteristics of Si Quantum Dots Embedded in SiN(x) Thin Films Prepared by Magnetron Co-Sputtering].
Chen XB; Yang W; Duan LF; Zhang LY; Yang PZ; Song ZN
Guang Pu Xue Yu Guang Pu Fen Xi; 2015 Jul; 35(7):1770-3. PubMed ID: 26717722
[TBL] [Abstract][Full Text] [Related]
14. Low-rate sputter-deposited Fe3Si thin films on Si substrates: structural and ferromagnetic properties.
Liew SL; Seng DH; Tan HR; Chi DZ
J Nanosci Nanotechnol; 2011 Mar; 11(3):2687-90. PubMed ID: 21449455
[TBL] [Abstract][Full Text] [Related]
15. Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films.
Sahu BS; Delachat F; Slaoui A; Carrada M; Ferblantier G; Muller D
Nanoscale Res Lett; 2011 Feb; 6(1):178. PubMed ID: 21711712
[TBL] [Abstract][Full Text] [Related]
16. Coulomb blockade effects in silicon nanoparticles embedded in thin silicon-rich oxide films.
Morales-Sánchez A; Barreto J; Domínguez C; Aceves M; Yu Z; Luna-López JA
Nanotechnology; 2008 Apr; 19(16):165401. PubMed ID: 21825642
[TBL] [Abstract][Full Text] [Related]
17. Effect of annealing treatment on electroluminescence from GaN/Si nanoheterostructure array.
Han CB; He C; Meng XB; Wan YR; Tian YT; Zhang YJ; Li XJ
Opt Express; 2012 Feb; 20(5):5636-43. PubMed ID: 22418371
[TBL] [Abstract][Full Text] [Related]
18. Synthesis of silicon nitride nanowires by the pyrolysis of perhydropolysilazane.
Qi GJ; Zhang CR; Hu HF
J Nanosci Nanotechnol; 2006 May; 6(5):1486-8. PubMed ID: 16792386
[TBL] [Abstract][Full Text] [Related]
19. Site-specific and patterned growth of TiO2 nanotube arrays from e-beam evaporated thin titanium film on Si wafer.
Chappanda KN; Smith YR; Misra M; Mohanty SK
Nanotechnology; 2012 Sep; 23(38):385601. PubMed ID: 22948670
[TBL] [Abstract][Full Text] [Related]
20. Characteristics of nanocomposite ZrO2/Al2O3 films deposited by plasma-enhanced atomic layer deposition.
Yun SJ; Lim JW; Kim HT
J Nanosci Nanotechnol; 2007 Nov; 7(11):4180-4. PubMed ID: 18047146
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]