These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

144 related articles for article (PubMed ID: 21801408)

  • 1. Atom devices based on single dopants in silicon nanostructures.
    Moraru D; Udhiarto A; Anwar M; Nowak R; Jablonski R; Hamid E; Tarido JC; Mizuno T; Tabe M
    Nanoscale Res Lett; 2011 Jul; 6(1):479. PubMed ID: 21801408
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices.
    Moraru D; Samanta A; Tyszka K; Anh le T; Muruganathan M; Mizuno T; Jablonski R; Mizuta H; Tabe M
    Nanoscale Res Lett; 2015 Dec; 10(1):372. PubMed ID: 26403925
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Single-electron tunneling through an individual arsenic dopant in silicon.
    Shorokhov VV; Presnov DE; Amitonov SV; Pashkin YA; Krupenin VA
    Nanoscale; 2017 Jan; 9(2):613-620. PubMed ID: 27942691
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Single-Charge Tunneling in Codoped Silicon Nanodevices.
    Moraru D; Kaneko T; Tamura Y; Jupalli TT; Singh RS; Pandy C; Popa L; Iacomi F
    Nanomaterials (Basel); 2023 Jun; 13(13):. PubMed ID: 37446427
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors.
    Samanta A; Moraru D; Mizuno T; Tabe M
    Sci Rep; 2015 Nov; 5():17377. PubMed ID: 26616434
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor.
    Prati E; Hori M; Guagliardo F; Ferrari G; Shinada T
    Nat Nanotechnol; 2012 Jul; 7(7):443-7. PubMed ID: 22751223
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Single-electron transport through single dopants in a dopant-rich environment.
    Tabe M; Moraru D; Ligowski M; Anwar M; Jablonski R; Ono Y; Mizuno T
    Phys Rev Lett; 2010 Jul; 105(1):016803. PubMed ID: 20867471
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Directed Atom-by-Atom Assembly of Dopants in Silicon.
    Hudak BM; Song J; Sims H; Troparevsky MC; Humble TS; Pantelides ST; Snijders PC; Lupini AR
    ACS Nano; 2018 Jun; 12(6):5873-5879. PubMed ID: 29750507
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Transport spectroscopy of coupled donors in silicon nano-transistors.
    Moraru D; Samanta A; Anh le T; Mizuno T; Mizuta H; Tabe M
    Sci Rep; 2014 Aug; 4():6219. PubMed ID: 25164032
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Single-donor ionization energies in a nanoscale CMOS channel.
    Pierre M; Wacquez R; Jehl X; Sanquer M; Vinet M; Cueto O
    Nat Nanotechnol; 2010 Feb; 5(2):133-7. PubMed ID: 19966793
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si.
    Voyles PM; Muller DA; Grazul JL; Citrin PH; Gossmann HJ
    Nature; 2002 Apr; 416(6883):826-9. PubMed ID: 11976677
    [TBL] [Abstract][Full Text] [Related]  

  • 12. A single-atom transistor.
    Fuechsle M; Miwa JA; Mahapatra S; Ryu H; Lee S; Warschkow O; Hollenberg LC; Klimeck G; Simmons MY
    Nat Nanotechnol; 2012 Feb; 7(4):242-6. PubMed ID: 22343383
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon.
    Fuhrer A; Füchsle M; Reusch TC; Weber B; Simmons MY
    Nano Lett; 2009 Feb; 9(2):707-10. PubMed ID: 19119868
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Depth-dependent imaging of individual dopant atoms in silicon.
    Voyles PM; Muller DA; Kirkland EJ
    Microsc Microanal; 2004 Apr; 10(2):291-300. PubMed ID: 15306055
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Single-electron capacitance spectroscopy of individual dopants in silicon.
    Gasseller M; DeNinno M; Loo R; Harrison JF; Caymax M; Rogge S; Tessmer SH
    Nano Lett; 2011 Dec; 11(12):5208-12. PubMed ID: 22022859
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Analyzing the channel dopant profile in next-generation FinFETs via atom probe tomography.
    Martin AJ; Wei Y; Scholze A
    Ultramicroscopy; 2018 Mar; 186():104-111. PubMed ID: 29287250
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Influence of Number Fluctuation and Position Variation of Channel Dopants and Gate Metal Grains on Tunneling Field-Effect Transistors (TFETs).
    Choi KM; Kim SK; Choi WY
    J Nanosci Nanotechnol; 2016 May; 16(5):5255-8. PubMed ID: 27483910
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Nondestructive imaging of atomically thin nanostructures buried in silicon.
    Gramse G; Kölker A; Lim T; Stock TJZ; Solanki H; Schofield SR; Brinciotti E; Aeppli G; Kienberger F; Curson NJ
    Sci Adv; 2017 Jun; 3(6):e1602586. PubMed ID: 28782006
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Enhancing semiconductor device performance using ordered dopant arrays.
    Shinada T; Okamoto S; Kobayashi T; Ohdomari I
    Nature; 2005 Oct; 437(7062):1128-31. PubMed ID: 16237438
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.
    Lee W; Su P
    Nanotechnology; 2009 Feb; 20(6):065202. PubMed ID: 19417374
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.