These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

113 related articles for article (PubMed ID: 21823613)

  • 1. Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates.
    Uccelli E; Arbiol J; Magen C; Krogstrup P; Russo-Averchi E; Heiss M; Mugny G; Morier-Genoud F; Nygård J; Morante JR; Fontcuberta I Morral A
    Nano Lett; 2011 Sep; 11(9):3827-32. PubMed ID: 21823613
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control.
    Fonseka HA; Caroff P; Wong-Leung J; Ameruddin AS; Tan HH; Jagadish C
    ACS Nano; 2014 Jul; 8(7):6945-54. PubMed ID: 24883914
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon.
    Matteini F; Dubrovskii VG; Rüffer D; Tütüncüoğlu G; Fontana Y; Morral AF
    Nanotechnology; 2015 Mar; 26(10):105603. PubMed ID: 25687793
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon.
    Russo-Averchi E; Heiss M; Michelet L; Krogstrup P; Nygard J; Magen C; Morante JR; Uccelli E; Arbiol J; Fontcuberta i Morral A
    Nanoscale; 2012 Mar; 4(5):1486-90. PubMed ID: 22314270
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Preferred growth direction of III-V nanowires on differently oriented Si substrates.
    Zeng H; Yu X; Fonseka HA; Boras G; Jurczak P; Wang T; Sanchez AM; Liu H
    Nanotechnology; 2020 Nov; 31(47):475708. PubMed ID: 32885789
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.
    Yao M; Cong S; Arab S; Huang N; Povinelli ML; Cronin SB; Dapkus PD; Zhou C
    Nano Lett; 2015 Nov; 15(11):7217-24. PubMed ID: 26502060
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Self-catalyzed VLS grown InAs nanowires with twinning superlattices.
    Grap T; Rieger T; Blömers Ch; Schäpers T; Grützmacher D; Lepsa MI
    Nanotechnology; 2013 Aug; 24(33):335601. PubMed ID: 23881182
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Light-Emitting GaAs Nanowires on a Flexible Substrate.
    Valente J; Godde T; Zhang Y; Mowbray DJ; Liu H
    Nano Lett; 2018 Jul; 18(7):4206-4213. PubMed ID: 29894627
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires.
    Koivusalo ES; Hakkarainen TV; Galeti HVA; Gobato YG; Dubrovskii VG; Guina MD
    Nano Lett; 2019 Jan; 19(1):82-89. PubMed ID: 30537843
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.
    Dubrovskii VG; Xu T; Álvarez AD; Plissard SR; Caroff P; Glas F; Grandidier B
    Nano Lett; 2015 Aug; 15(8):5580-4. PubMed ID: 26189571
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Formation Mechanism of Twinning Superlattices in Doped GaAs Nanowires.
    Isik Goktas N; Sokolovskii A; Dubrovskii VG; LaPierre RR
    Nano Lett; 2020 May; 20(5):3344-3351. PubMed ID: 32239956
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium.
    Kim H; Ren D; Farrell AC; Huffaker DL
    Nanotechnology; 2018 Feb; 29(8):085601. PubMed ID: 29300185
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Planar GaAs nanowires on GaAs (100) substrates: self-aligned, nearly twin-defect free, and transfer-printable.
    Fortuna SA; Wen J; Chun IS; Li X
    Nano Lett; 2008 Dec; 8(12):4421-7. PubMed ID: 19367971
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Novel growth and properties of GaAs nanowires on Si substrates.
    Kang JH; Gao Q; Joyce HJ; Tan HH; Jagadish C; Kim Y; Choi DY; Guo Y; Xu H; Zou J; Fickenscher MA; Smith LM; Jackson HE; Yarrison-Rice JM
    Nanotechnology; 2010 Jan; 21(3):035604. PubMed ID: 19966397
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires.
    Schroth P; Al Humaidi M; Feigl L; Jakob J; Al Hassan A; Davtyan A; Küpers H; Tahraoui A; Geelhaar L; Pietsch U; Baumbach T
    Nano Lett; 2019 Jul; 19(7):4263-4271. PubMed ID: 31150261
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate.
    Tomioka K; Kobayashi Y; Motohisa J; Hara S; Fukui T
    Nanotechnology; 2009 Apr; 20(14):145302. PubMed ID: 19420521
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Droplet-Confined Alternate Pulsed Epitaxy of GaAs Nanowires on Si Substrates down to CMOS-Compatible Temperatures.
    Balaghi L; Tauchnitz T; Hübner R; Bischoff L; Schneider H; Helm M; Dimakis E
    Nano Lett; 2016 Jul; 16(7):4032-9. PubMed ID: 27351336
    [TBL] [Abstract][Full Text] [Related]  

  • 18. III-V Integration on Si(100): Vertical Nanospades.
    Güniat L; Martí-Sánchez S; Garcia O; Boscardin M; Vindice D; Tappy N; Friedl M; Kim W; Zamani M; Francaviglia L; Balgarkashi A; Leran JB; Arbiol J; Fontcuberta I Morral A
    ACS Nano; 2019 May; 13(5):5833-5840. PubMed ID: 31038924
    [TBL] [Abstract][Full Text] [Related]  

  • 19. 3D branched nanowire heterojunction photoelectrodes for high-efficiency solar water splitting and H2 generation.
    Sun K; Jing Y; Li C; Zhang X; Aguinaldo R; Kargar A; Madsen K; Banu K; Zhou Y; Bando Y; Liu Z; Wang D
    Nanoscale; 2012 Mar; 4(5):1515-21. PubMed ID: 22322530
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy.
    Wang CY; Hong YC; Ko ZJ; Su YW; Huang JH
    Nanoscale Res Lett; 2017 Dec; 12(1):290. PubMed ID: 28438011
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.