294 related articles for article (PubMed ID: 21825663)
1. Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis.
Stokes P; Khondaker SI
Nanotechnology; 2008 Apr; 19(17):175202. PubMed ID: 21825663
[TBL] [Abstract][Full Text] [Related]
2. High yield assembly and electron transport investigation of semiconducting-rich local-gated single-walled carbon nanotube field effect transistors.
Kormondy KJ; Stokes P; Khondaker SI
Nanotechnology; 2011 Oct; 22(41):415201. PubMed ID: 21914942
[TBL] [Abstract][Full Text] [Related]
3. A general approach for high yield fabrication of CMOS-compatible all-semiconducting carbon nanotube field effect transistors.
Islam MR; Kormondy KJ; Silbar E; Khondaker SI
Nanotechnology; 2012 Mar; 23(12):125201. PubMed ID: 22398179
[TBL] [Abstract][Full Text] [Related]
4. An integrated logic circuit assembled on a single carbon nanotube.
Chen Z; Appenzeller J; Lin YM; Sippel-Oakley J; Rinzler AG; Tang J; Wind SJ; Solomon PM; Avouris P
Science; 2006 Mar; 311(5768):1735. PubMed ID: 16556834
[TBL] [Abstract][Full Text] [Related]
5. The fabrication of carbon nanotube field-effect transistors with semiconductors as the source and drain contact materials.
Xiao Z; Camino FE
Nanotechnology; 2009 Apr; 20(13):135205. PubMed ID: 19420491
[TBL] [Abstract][Full Text] [Related]
6. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.
Yang Y; Ding L; Han J; Zhang Z; Peng LM
ACS Nano; 2017 Apr; 11(4):4124-4132. PubMed ID: 28333433
[TBL] [Abstract][Full Text] [Related]
7. Dielectrophoresis-Based Positioning of Carbon Nanotubes for Wafer-Scale Fabrication of Carbon Nanotube Devices.
Kimbrough J; Williams L; Yuan Q; Xiao Z
Micromachines (Basel); 2020 Dec; 12(1):. PubMed ID: 33375602
[TBL] [Abstract][Full Text] [Related]
8. Carbon nanotube thin film transistors based on aerosol methods.
Zavodchikova MY; Kulmala T; Nasibulin AG; Ermolov V; Franssila S; Grigoras K; Kauppinen EI
Nanotechnology; 2009 Feb; 20(8):085201. PubMed ID: 19417441
[TBL] [Abstract][Full Text] [Related]
9. Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering.
Ding L; Wang Z; Pei T; Zhang Z; Wang S; Xu H; Peng F; Li Y; Peng LM
ACS Nano; 2011 Apr; 5(4):2512-9. PubMed ID: 21370813
[TBL] [Abstract][Full Text] [Related]
10. A carbon nanotube gated carbon nanotube transistor with 5 ps gate delay.
Svensson J; Tarakanov Y; Lee DS; Kinaret JM; Park YW; Campbell EE
Nanotechnology; 2008 Aug; 19(32):325201. PubMed ID: 21828807
[TBL] [Abstract][Full Text] [Related]
11. Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio.
Qiu C; Zhang Z; Zhong D; Si J; Yang Y; Peng LM
ACS Nano; 2015 Jan; 9(1):969-77. PubMed ID: 25545108
[TBL] [Abstract][Full Text] [Related]
12. Scaling carbon nanotube complementary transistors to 5-nm gate lengths.
Qiu C; Zhang Z; Xiao M; Yang Y; Zhong D; Peng LM
Science; 2017 Jan; 355(6322):271-276. PubMed ID: 28104886
[TBL] [Abstract][Full Text] [Related]
13. Floating-potential dielectrophoresis-controlled fabrication of single-carbon-nanotube transistors and their electrical properties.
Dong L; Chirayos V; Bush J; Jiao J; Dubin VM; Chebian RV; Ono Y; Conley JF; Ulrich BD
J Phys Chem B; 2005 Jul; 109(27):13148-53. PubMed ID: 16852637
[TBL] [Abstract][Full Text] [Related]
14. Micropatterned single-walled carbon nanotube electrodes for use in high-performance transistors and inverters.
Kang W; Kim NH; Lee DY; Chang ST; Cho JH
ACS Appl Mater Interfaces; 2014 Jun; 6(12):9664-70. PubMed ID: 24915751
[TBL] [Abstract][Full Text] [Related]
15. Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.
Wei D; Zhang Y; Yang Y; Hasko DG; Chu D; Teo KB; Amaratunga GA; Milne WI
ACS Nano; 2008 Dec; 2(12):2526-30. PubMed ID: 19206288
[TBL] [Abstract][Full Text] [Related]
16. DC modeling and the source of flicker noise in passivated carbon nanotube transistors.
Kim S; Kim S; Janes DB; Mohammadi S; Back J; Shim M
Nanotechnology; 2010 Sep; 21(38):385203. PubMed ID: 20798468
[TBL] [Abstract][Full Text] [Related]
17. Evaluation of field-effect mobility and contact resistance of transistors that use solution-processed single-walled carbon nanotubes.
Cao Q; Han SJ; Tulevski GS; Franklin AD; Haensch W
ACS Nano; 2012 Jul; 6(7):6471-7. PubMed ID: 22671996
[TBL] [Abstract][Full Text] [Related]
18. Fabrication and characterization of directly-assembled ZnO nanowire field effect transistors with polymer gate dielectrics.
Yoon A; Hong WK; Lee T
J Nanosci Nanotechnol; 2007 Nov; 7(11):4101-5. PubMed ID: 18047128
[TBL] [Abstract][Full Text] [Related]
19. Dielectrophoretically trapping semiconductive carbon nanotube networks.
Cicoria R; Sun Y
Nanotechnology; 2008 Dec; 19(48):485303. PubMed ID: 21836297
[TBL] [Abstract][Full Text] [Related]
20. High-performance field effect transistors from solution processed carbon nanotubes.
Wang H; Luo J; Robertson A; Ito Y; Yan W; Lang V; Zaka M; Schäffel F; Rümmeli MH; Briggs GA; Warner JH
ACS Nano; 2010 Nov; 4(11):6659-64. PubMed ID: 20958015
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]