These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
294 related articles for article (PubMed ID: 21825663)
21. Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays. Engel M; Small JP; Steiner M; Freitag M; Green AA; Hersam MC; Avouris P ACS Nano; 2008 Dec; 2(12):2445-52. PubMed ID: 19206278 [TBL] [Abstract][Full Text] [Related]
22. High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates. Javey A; Kim H; Brink M; Wang Q; Ural A; Guo J; McIntyre P; McEuen P; Lundstrom M; Dai H Nat Mater; 2002 Dec; 1(4):241-6. PubMed ID: 12618786 [TBL] [Abstract][Full Text] [Related]
23. Metal contact engineering and registration-free fabrication of complementary metal-oxide semiconductor integrated circuits using aligned carbon nanotubes. Wang C; Ryu K; Badmaev A; Zhang J; Zhou C ACS Nano; 2011 Feb; 5(2):1147-53. PubMed ID: 21271709 [TBL] [Abstract][Full Text] [Related]
24. Electroluminescence from electrolyte-gated carbon nanotube field-effect transistors. Zaumseil J; Ho X; Guest JR; Wiederrecht GP; Rogers JA ACS Nano; 2009 Aug; 3(8):2225-34. PubMed ID: 19634895 [TBL] [Abstract][Full Text] [Related]
25. Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays. Liu C; Cao Y; Wang B; Zhang Z; Lin Y; Xu L; Yang Y; Jin C; Peng LM; Zhang Z ACS Nano; 2022 Dec; 16(12):21482-21490. PubMed ID: 36416375 [TBL] [Abstract][Full Text] [Related]
26. Dielectrophoresis-Assisted Integration of 1024 Carbon Nanotube Sensors into a CMOS Microsystem. Seichepine F; Rothe J; Dudina A; Hierlemann A; Frey U Adv Mater; 2017 May; 29(17):. PubMed ID: 28295737 [TBL] [Abstract][Full Text] [Related]
27. High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis. Joung D; Chunder A; Zhai L; Khondaker SI Nanotechnology; 2010 Apr; 21(16):165202. PubMed ID: 20348593 [TBL] [Abstract][Full Text] [Related]
28. Efficient n-Doping and Hole Blocking in Single-Walled Carbon Nanotube Transistors with 1,2,4,5-Tetrakis(tetramethylguanidino)ben-zene. Schneider S; Brohmann M; Lorenz R; Hofstetter YJ; Rother M; Sauter E; Zharnikov M; Vaynzof Y; Himmel HJ; Zaumseil J ACS Nano; 2018 Jun; 12(6):5895-5902. PubMed ID: 29787248 [TBL] [Abstract][Full Text] [Related]
29. Unipolar p-type single-walled carbon nanotube field-effect transistors using TTF-TCNQ as the contact material. Xian X; Yan K; Zhou W; Jiao L; Wu Z; Liu Z Nanotechnology; 2009 Dec; 20(50):505204. PubMed ID: 19923654 [TBL] [Abstract][Full Text] [Related]
30. Fabrication of Schottky barrier carbon nanotube field effect transistors using dielectrophoretic-based manipulation. Yu H; Tian X; Dong Z; Li WJ J Nanosci Nanotechnol; 2010 Nov; 10(11):7000-4. PubMed ID: 21137853 [TBL] [Abstract][Full Text] [Related]
31. Label-free protein biosensor based on aptamer-modified carbon nanotube field-effect transistors. Maehashi K; Katsura T; Kerman K; Takamura Y; Matsumoto K; Tamiya E Anal Chem; 2007 Jan; 79(2):782-7. PubMed ID: 17222052 [TBL] [Abstract][Full Text] [Related]
32. Miniature organic transistors with carbon nanotubes as quasi-one-dimensional electrodes. Qi P; Javey A; Rolandi M; Wang Q; Yenilmez E; Dai H J Am Chem Soc; 2004 Sep; 126(38):11774-5. PubMed ID: 15382895 [TBL] [Abstract][Full Text] [Related]
33. High-performance printed carbon nanotube thin-film transistors array fabricated by a nonlithography technique using hafnium oxide passivation layer and mask. Pillai SK; Chan-Park MB ACS Appl Mater Interfaces; 2012 Dec; 4(12):7047-54. PubMed ID: 23194001 [TBL] [Abstract][Full Text] [Related]
34. Radiation hardness of the electrical properties of carbon nanotube network field effect transistors under high-energy proton irradiation. Hong WK; Lee C; Nepal D; Geckeler KE; Shin K; Lee T Nanotechnology; 2006 Nov; 17(22):5675-80. PubMed ID: 21727341 [TBL] [Abstract][Full Text] [Related]
35. Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor circuits. Ding L; Zhang Z; Pei T; Liang S; Wang S; Zhou W; Liu J; Peng LM ACS Nano; 2012 May; 6(5):4013-9. PubMed ID: 22482426 [TBL] [Abstract][Full Text] [Related]