These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

276 related articles for article (PubMed ID: 21828749)

  • 41. Size-dependent intersubband optical properties of dome-shaped InAs/GaAs quantum dots with wetting layer.
    Sabaeian M; Khaledi-Nasab A
    Appl Opt; 2012 Jun; 51(18):4176-85. PubMed ID: 22722295
    [TBL] [Abstract][Full Text] [Related]  

  • 42. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.
    Su XB; Ding Y; Ma B; Zhang KL; Chen ZS; Li JL; Cui XR; Xu YQ; Ni HQ; Niu ZC
    Nanoscale Res Lett; 2018 Feb; 13(1):59. PubMed ID: 29468483
    [TBL] [Abstract][Full Text] [Related]  

  • 43. [Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling].
    Jia GZ; Yao JH; Zhang CL; Shu Q; Liu RB; Ye XL; Wang ZG
    Guang Pu Xue Yu Guang Pu Fen Xi; 2007 Nov; 27(11):2178-81. PubMed ID: 18260388
    [TBL] [Abstract][Full Text] [Related]  

  • 44. Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer.
    Wyborski P; Podemski P; Wroński PA; Jabeen F; Höfling S; Sęk G
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35161016
    [TBL] [Abstract][Full Text] [Related]  

  • 45. Effect of growth temperature and quantum structure on InAs/GaAs quantum dot solar cell.
    Park MH; Kim HS; Park SJ; Song JD; Kim SH; Lee YJ; Choi WJ; Park JH
    J Nanosci Nanotechnol; 2014 Apr; 14(4):2955-9. PubMed ID: 24734716
    [TBL] [Abstract][Full Text] [Related]  

  • 46. Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition.
    Pashchenko AS; Lunin LS; Danilina EM; Chebotarev SN
    Beilstein J Nanotechnol; 2018; 9():2794-2801. PubMed ID: 30498652
    [TBL] [Abstract][Full Text] [Related]  

  • 47. Comparative study on InAs/InGaAs dots-in-a-well structure grown on GaAs(311) B and (100) substrates.
    Wang L; Li M; Xiong M; Wang W; Gao H; Zhao L
    J Nanosci Nanotechnol; 2010 Nov; 10(11):7359-61. PubMed ID: 21137934
    [TBL] [Abstract][Full Text] [Related]  

  • 48. Lateral patterning of multilayer InAs/GaAs(001) quantum dot structures by in vacuo focused ion beam.
    Martin AJ; Saucer TW; Rodriguez GV; Sih V; Millunchick JM
    Nanotechnology; 2012 Apr; 23(13):135401. PubMed ID: 22421025
    [TBL] [Abstract][Full Text] [Related]  

  • 49. Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation.
    Hussain S; Pozzato A; Tormen M; Zannier V; Biasiol G
    Materials (Basel); 2016 Mar; 9(3):. PubMed ID: 28773333
    [TBL] [Abstract][Full Text] [Related]  

  • 50. Alloy Fluctuations Act as Quantum Dot-like Emitters in GaAs-AlGaAs Core-Shell Nanowires.
    Jeon N; Loitsch B; Morkoetter S; Abstreiter G; Finley J; Krenner HJ; Koblmueller G; Lauhon LJ
    ACS Nano; 2015 Aug; 9(8):8335-43. PubMed ID: 26225539
    [TBL] [Abstract][Full Text] [Related]  

  • 51. InAs quantum dot clusters grown on GaAs droplet templates: surface morphologies and optical properties.
    Liang BL; Dorogan VG; Mazur YI; Strom NW; Lee JH; Sablon KA; Wang ZhM; Salamo GJ
    J Nanosci Nanotechnol; 2009 May; 9(5):3320-4. PubMed ID: 19453010
    [TBL] [Abstract][Full Text] [Related]  

  • 52. Carrier dynamics in InAs/AlAs quantum dots: lack in carrier transfer from wetting layer to quantum dots.
    Shamirzaev TS; Abramkin DS; Nenashev AV; Zhuravlev KS; Trojánek F; Dzurnák B; Malý P
    Nanotechnology; 2010 Apr; 21(15):155703. PubMed ID: 20332562
    [TBL] [Abstract][Full Text] [Related]  

  • 53. Temperature-sensitive photoluminescence of CdSe quantum dot clusters.
    Biju V; Makita Y; Sonoda A; Yokoyama H; Baba Y; Ishikawa M
    J Phys Chem B; 2005 Jul; 109(29):13899-905. PubMed ID: 16852744
    [TBL] [Abstract][Full Text] [Related]  

  • 54. The Hanle effect and electron spin polarization in InAs/GaAs quantum dots up to room temperature.
    Beyer J; Buyanova IA; Suraprapapich S; Tu CW; Chen WM
    Nanotechnology; 2012 Apr; 23(13):135705. PubMed ID: 22421164
    [TBL] [Abstract][Full Text] [Related]  

  • 55. Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer.
    Liu Y; Liang B; Guo Q; Wang S; Fu G; Fu N; Wang ZM; Mazur YI; Salamo GJ
    Nanoscale Res Lett; 2015 Dec; 10(1):973. PubMed ID: 26123271
    [TBL] [Abstract][Full Text] [Related]  

  • 56. Size-dependent properties of single InAs quantum dots grown in nanoimprint lithography patterned GaAs pits.
    Tommila J; Schramm A; Hakkarainen TV; Dumitrescu M; Guina M
    Nanotechnology; 2013 Jun; 24(23):235204. PubMed ID: 23676532
    [TBL] [Abstract][Full Text] [Related]  

  • 57. Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots.
    Chen ZS; Ma B; Shang XJ; He Y; Zhang LC; Ni HQ; Wang JL; Niu ZC
    Nanoscale Res Lett; 2016 Dec; 11(1):382. PubMed ID: 27576522
    [TBL] [Abstract][Full Text] [Related]  

  • 58. Mechanism of quantum dot luminescence excitation within implanted SiO2:Si:C films.
    Zatsepin AF; Buntov EA; Kortov VS; Tetelbaum DI; Mikhaylov AN; Belov AI
    J Phys Condens Matter; 2012 Feb; 24(4):045301. PubMed ID: 22214549
    [TBL] [Abstract][Full Text] [Related]  

  • 59. Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence.
    Hsu CC; Hsu RQ; Wu YH; Chi TW; Chiang CH; Chen JF; Chang MN
    Ultramicroscopy; 2008 Oct; 108(11):1495-9. PubMed ID: 18768262
    [TBL] [Abstract][Full Text] [Related]  

  • 60. Vertically stacked quantum dot pairs fabricated by nanohole filling.
    Sonnenberg D; Küster A; Graf A; Heyn Ch; Hansen W
    Nanotechnology; 2014 May; 25(21):215602. PubMed ID: 24784358
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 14.