These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

185 related articles for article (PubMed ID: 21848334)

  • 1. Modeling novel double-in-plane gate electric-double-layer thin-film and nanoscale transistors.
    Dai M; Wan Q
    Nano Lett; 2011 Sep; 11(9):3987-90. PubMed ID: 21848334
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function.
    Gan X; Dou W; Hou W; Yuan X; Lei L; Zhou Y; Yang J; Chen D; Zhou W; Tang D
    Nanomaterials (Basel); 2023 Aug; 13(16):. PubMed ID: 37630930
    [TBL] [Abstract][Full Text] [Related]  

  • 3. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance.
    Kim H; Kwack YJ; Yun EJ; Choi WS
    Sci Rep; 2016 Sep; 6():33576. PubMed ID: 27641430
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Flexible electric-double-layer thin film transistors based on a vertical InGaZnO
    Lei L; Tan Y; Yuan X; Dou W; Zhang J; Wang Y; Zeng S; Deng S; Guo H; Zhou W; Tang D
    RSC Adv; 2021 May; 11(29):17910-17913. PubMed ID: 35480189
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer.
    Cai W; Ma X; Zhang J; Song A
    Materials (Basel); 2017 Apr; 10(4):. PubMed ID: 28772789
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY
    J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO
    Dou W; Tan Y
    RSC Adv; 2019 Sep; 9(53):30715-30719. PubMed ID: 35529372
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Dual-gate low-voltage transparent electric-double-layer thin-film transistors with a top gate for threshold voltage modulation.
    Dou W; Tan Y
    RSC Adv; 2020 Feb; 10(14):8093-8096. PubMed ID: 35497837
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors.
    Heo JS; Choi S; Jo JW; Kang J; Park HH; Kim YH; Park SK
    Materials (Basel); 2017 Jun; 10(6):. PubMed ID: 28772972
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors.
    Hur JS; Kim JO; Kim HA; Jeong JK
    ACS Appl Mater Interfaces; 2019 Jun; 11(24):21675-21685. PubMed ID: 31124358
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO
    Choi CH; Kim T; Kim MJ; Kim GB; Oh JE; Jeong JK
    Sci Rep; 2024 Apr; 14(1):7623. PubMed ID: 38561385
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors.
    Kang YH; Min BK; Kim SK; Bae G; Song W; Lee C; Cho SY; An KS
    ACS Appl Mater Interfaces; 2020 Apr; 12(13):15396-15405. PubMed ID: 32148019
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Low-voltage operation of ZrO2-gated n-type thin-film transistors based on a channel formed by hybrid phases of SnO and SnO2.
    Chu HC; Shen YS; Hsieh CH; Huang JH; Wu YH
    ACS Appl Mater Interfaces; 2015 Jul; 7(28):15129-37. PubMed ID: 26148216
    [TBL] [Abstract][Full Text] [Related]  

  • 14. High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer.
    Yen TJ; Chin A; Gritsenko V
    Nanomaterials (Basel); 2020 Oct; 10(11):. PubMed ID: 33126463
    [TBL] [Abstract][Full Text] [Related]  

  • 15. A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of
    Wu G; Sahoo AK; Chen DW; Chang JW
    Materials (Basel); 2018 Dec; 11(12):. PubMed ID: 30544867
    [TBL] [Abstract][Full Text] [Related]  

  • 16. In-Plane Amorphous Oxide Ionotronic Devices and Circuits with Photochemically Enabled Favorable Interfaces.
    Kang J; Park CY; Kang SH; Moon S; Keum K; Jo JW; Kim YH; Park SK
    ACS Appl Mater Interfaces; 2020 Sep; 12(39):44288-44296. PubMed ID: 32902256
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric.
    Chen Z; Lan L; Peng J
    RSC Adv; 2019 Aug; 9(46):27117-27124. PubMed ID: 35528573
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications.
    Zhu LQ; Sun J; Wu GD; Zhang HL; Wan Q
    Nanoscale; 2013 Mar; 5(5):1980-5. PubMed ID: 23364424
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Flexible integrated diode-transistor logic (DTL) driving circuits based on printed carbon nanotube thin film transistors with low operation voltage.
    Liu T; Zhao J; Xu W; Dou J; Zhao X; Deng W; Wei C; Xu W; Guo W; Su W; Jie J; Cui Z
    Nanoscale; 2018 Jan; 10(2):614-622. PubMed ID: 29235605
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.
    Jaehnike F; Pham DV; Anselmann R; Bock C; Kunze U
    ACS Appl Mater Interfaces; 2015 Jul; 7(25):14011-7. PubMed ID: 26039187
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 10.