These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

94 related articles for article (PubMed ID: 21918297)

  • 1. Short wavelength emission of AlGaInP quantum dots grown on GaP substrate.
    Gerhard S; Kremling S; Höfling S; Worschech L; Forchel A
    Nanotechnology; 2011 Oct; 22(41):415604. PubMed ID: 21918297
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Density and size control of InP/GaInP quantum dots on GaAs substrate grown by gas source molecular beam epitaxy.
    Rödel R; Bauer A; Kremling S; Reitzenstein S; Höfling S; Kamp M; Worschech L; Forchel A
    Nanotechnology; 2012 Jan; 23(1):015605. PubMed ID: 22156168
    [TBL] [Abstract][Full Text] [Related]  

  • 3. The structural and optical characterization of high areal density Ga(x)In(1-x)P quantum dots on GaP.
    Gerhard S; Baumann V; Höfling S; Forchel A
    Nanotechnology; 2009 Oct; 20(43):434016. PubMed ID: 19801768
    [TBL] [Abstract][Full Text] [Related]  

  • 4. GaSb/GaAs type-II quantum dots grown by droplet epitaxy.
    Liang B; Lin A; Pavarelli N; Reyner C; Tatebayashi J; Nunna K; He J; Ochalski TJ; Huyet G; Huffaker DL
    Nanotechnology; 2009 Nov; 20(45):455604. PubMed ID: 19834245
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Photoluminescence and photocurrent from InP nanowires with InAsP quantum dots grown on Si by molecular beam epitaxy.
    Kuyanov P; LaPierre RR
    Nanotechnology; 2015 Aug; 26(31):315202. PubMed ID: 26177614
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates.
    Skiba-Szymanska J; Jamil A; Farrer I; Ward MB; Nicoll CA; Ellis DJ; Griffiths JP; Anderson D; Jones GA; Ritchie DA; Shields AJ
    Nanotechnology; 2011 Feb; 22(6):065302. PubMed ID: 21212488
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Temperature and excitation density dependent photoluminescence of sputtering-induced GaAs/AlGaAs quantum dots.
    Wang Y; Yoon SF; Liu CY; Ngo CY; Ahn J
    Nanotechnology; 2008 Jan; 19(1):015602. PubMed ID: 21730537
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Tailoring of morphology and emission wavelength of AlGaInAs quantum dots.
    Schlereth TW; Schneider C; Höfling S; Forchel A
    Nanotechnology; 2008 Jan; 19(4):045601. PubMed ID: 21817507
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Photoluminescence of charged CdSe/ZnS quantum dots in the gas phase: effects of charge and heating on absorption and emission probabilities.
    Howder CR; Long BA; Bell DM; Furakawa KH; Johnson RC; Fang Z; Anderson SL
    ACS Nano; 2014 Dec; 8(12):12534-48. PubMed ID: 25427008
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm.
    Liu WS; Tseng HL; Kuo PC
    Opt Express; 2014 Aug; 22(16):18860-9. PubMed ID: 25320972
    [TBL] [Abstract][Full Text] [Related]  

  • 11. InAs/GaInAs(N) quantum dots on GaAs substrate for single photon emitters above 1300 nm.
    Strauss M; Höfling S; Forchel A
    Nanotechnology; 2009 Dec; 20(50):505601. PubMed ID: 19907066
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Effects of pulsed laser radiation on epitaxial self-assembled Ge quantum dots grown on Si substrates.
    del Pino AP; György E; Marcus IC; Roqueta J; Alonso MI
    Nanotechnology; 2011 Jul; 22(29):295304. PubMed ID: 21680960
    [TBL] [Abstract][Full Text] [Related]  

  • 13. The influence of substrate temperature on InAsN quantum dots grown by molecular beam epitaxy.
    Fälth JF; Yoon SF; Fitzgerald EA
    Nanotechnology; 2008 Nov; 19(45):455606. PubMed ID: 21832783
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure.
    Mazur YI; Dorogan VG; Schmidbauer M; Tarasov GG; Johnson SR; Lu X; Yu SQ; Wang ZhM; Tiedje T; Salamo GJ
    Nanotechnology; 2011 Sep; 22(37):375703. PubMed ID: 21852736
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Synergistic effects of SPR and FRET on the photoluminescence of ZnO nanorod heterostructures.
    Chang JY; Kim TG; Sung YM
    Nanotechnology; 2011 Oct; 22(42):425708. PubMed ID: 21946036
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Caution for monitoring the surface modification of dually emitted ZnSe quantum dots by time-resolved photoluminescence.
    Wang C; Hu Z; Xu S; Zhou S; Wang Z; Cui Y
    Nanotechnology; 2015 Mar; 26(12):125703. PubMed ID: 25736621
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Low density MOVPE grown InGaAs QDs exhibiting ultra-narrow single exciton linewidths.
    Richter D; Hafenbrak R; Jöns KD; Schulz WM; Eichfelder M; Heldmaier M; Rossbach R; Jetter M; Michler P
    Nanotechnology; 2010 Mar; 21(12):125606. PubMed ID: 20203350
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.
    Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y
    Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Pushing the band gap envelope: mid-infrared emitting colloidal PbSe quantum dots.
    Pietryga JM; Schaller RD; Werder D; Stewart MH; Klimov VI; Hollingsworth JA
    J Am Chem Soc; 2004 Sep; 126(38):11752-3. PubMed ID: 15382884
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Microphotoluminescence spectroscopy of single CdTe/ZnTe quantum dots grown on Si001 substrates.
    Lee HS; Rastelli A; Benyoucef M; Ding F; Kim TW; Park HL; Schmidt OG
    Nanotechnology; 2009 Feb; 20(7):075705. PubMed ID: 19417433
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 5.