These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

199 related articles for article (PubMed ID: 21926029)

  • 21. In situ monitoring of myenteric neuron activity using acetylcholinesterase-modified AlGaN/GaN solution-gate field-effect transistors.
    Müntze GM; Pouokam E; Steidle J; Schäfer W; Sasse A; Röth K; Diener M; Eickhoff M
    Biosens Bioelectron; 2016 Mar; 77():1048-54. PubMed ID: 26547432
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
    Li Y; Xiang J; Qian F; Gradecak S; Wu Y; Yan H; Blom DA; Lieber CM
    Nano Lett; 2006 Jul; 6(7):1468-73. PubMed ID: 16834431
    [TBL] [Abstract][Full Text] [Related]  

  • 23. High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors.
    Sarangadharan I; Regmi A; Chen YW; Hsu CP; Chen PC; Chang WH; Lee GY; Chyi JI; Shiesh SC; Lee GB; Wang YL
    Biosens Bioelectron; 2018 Feb; 100():282-289. PubMed ID: 28942210
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Photosensor based on an FET utilizing a biocomponent of photosystem I for use in imaging devices.
    Terasaki N; Yamamoto N; Hattori M; Tanigaki N; Hiraga T; Ito K; Konno M; Iwai M; Inoue Y; Uno S; Nakazato K
    Langmuir; 2009 Oct; 25(19):11969-74. PubMed ID: 19731941
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.
    Haziq M; Falina S; Manaf AA; Kawarada H; Syamsul M
    Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557432
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor.
    Pérez-Tomás A; Catalàn G; Fontserè A; Iglesias V; Chen H; Gammon PM; Jennings MR; Thomas M; Fisher CA; Sharma YK; Placidi M; Chmielowska M; Chenot S; Porti M; Nafría M; Cordier Y
    Nanotechnology; 2015 Mar; 26(11):115203. PubMed ID: 25719801
    [TBL] [Abstract][Full Text] [Related]  

  • 27. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
    Hong S; Rana Au; Heo JW; Kim HS
    J Nanosci Nanotechnol; 2015 Oct; 15(10):7467-71. PubMed ID: 26726352
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Modulation of cyanobacterial photosystem I deposition properties on alkanethiolate Au substrate by various experimental conditions.
    Mukherjee D; Vaughn M; Khomami B; Bruce BD
    Colloids Surf B Biointerfaces; 2011 Nov; 88(1):181-90. PubMed ID: 21820281
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Reduced graphene oxide-functionalized high electron mobility transistors for novel recognition pattern label-free DNA sensors.
    Zhang X; Zhang Y; Liao Q; Song Y; Ma S
    Small; 2013 Dec; 9(23):4045-50. PubMed ID: 23828864
    [TBL] [Abstract][Full Text] [Related]  

  • 30. High sensitivity label-free detection of HER2 using an Al-GaN/GaN high electron mobility transistor-based biosensor.
    Mishra S; Kachhawa P; Jain AK; Thakur RR; Chaturvedi N
    Lab Chip; 2022 Oct; 22(21):4129-4140. PubMed ID: 36129428
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Direct mediatorless electron transport between the monolayer of photosystem II and poly(mercapto-p-benzoquinone) modified gold electrode--new design of biosensor for herbicide detection.
    Maly J; Masojidek J; Masci A; Ilie M; Cianci E; Foglietti V; Vastarella W; Pilloton R
    Biosens Bioelectron; 2005 Dec; 21(6):923-32. PubMed ID: 16257662
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Two-Dimensional Perovskite-Gated AlGaN/GaN High-Electron-Mobility-Transistor for Neuromorphic Vision Sensor.
    Hong X; Huang Y; Tian Q; Zhang S; Liu C; Wang L; Zhang K; Sun J; Liao L; Zou X
    Adv Sci (Weinh); 2022 Sep; 9(27):e2202019. PubMed ID: 35869612
    [TBL] [Abstract][Full Text] [Related]  

  • 33. A salivary urea sensor based on a microsieve disposable gate AlGaN/GaN high electron mobility transistor.
    Yang G; Xu B; Chang H; Gu Z; Li J
    Anal Methods; 2024 Jul; 16(26):4381-4386. PubMed ID: 38896043
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications.
    Makowski MS; Kim S; Gaillard M; Janes D; Manfra MJ; Bryan I; Sitar Z; Arellano C; Xie J; Collazo R; Ivanisevic A
    Appl Phys Lett; 2013 Feb; 102(7):74102. PubMed ID: 23509411
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
    Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS
    Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor.
    Baek SH; Lee GW; Cho CY; Lee SN
    Sci Rep; 2021 Mar; 11(1):7172. PubMed ID: 33785795
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Transmembrane charge transfer in photosynthetic reaction centers: some similarities and distinctions.
    Semenov AY; Kurashov VN; Mamedov MD
    J Photochem Photobiol B; 2011; 104(1-2):326-32. PubMed ID: 21356596
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum.
    Chu CH; Sarangadharan I; Regmi A; Chen YW; Hsu CP; Chang WH; Lee GY; Chyi JI; Chen CC; Shiesh SC; Lee GB; Wang YL
    Sci Rep; 2017 Jul; 7(1):5256. PubMed ID: 28701708
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance.
    Khan MA; Heo JW; Kim HS; Park HC
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8141-7. PubMed ID: 25958488
    [TBL] [Abstract][Full Text] [Related]  

  • 40. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.
    Lee YJ; Yao YC; Huang CY; Lin TY; Cheng LL; Liu CY; Wang MT; Hwang JM
    Nanoscale Res Lett; 2014; 9(1):433. PubMed ID: 25206318
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 10.