These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

220 related articles for article (PubMed ID: 22032860)

  • 1. Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations.
    Yoon C; Moon T; Lee M; Cho G; Kim S
    Nanotechnology; 2011 Nov; 22(46):465202. PubMed ID: 22032860
    [TBL] [Abstract][Full Text] [Related]  

  • 2. CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal-Semiconductor Field-Effect Transistors, and Inverters.
    Jin W; Zhang K; Gao Z; Li Y; Yao L; Wang Y; Dai L
    ACS Appl Mater Interfaces; 2015 Jun; 7(24):13131-6. PubMed ID: 26061530
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High-performance logic circuits constructed on single CdS nanowires.
    Ma RM; Dai L; Huo HB; Xu WJ; Qin GG
    Nano Lett; 2007 Nov; 7(11):3300-4. PubMed ID: 17935372
    [TBL] [Abstract][Full Text] [Related]  

  • 4. NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers.
    Yeom D; Keem K; Kang J; Jeong DY; Yoon C; Kim D; Kim S
    Nanotechnology; 2008 Jul; 19(26):265202. PubMed ID: 21828674
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Flexible logic circuits composed of chalcogenide-nanocrystal-based thin film transistors.
    Yun J; Cho K; Kim S
    Nanotechnology; 2010 Jun; 21(23):235204. PubMed ID: 20472946
    [TBL] [Abstract][Full Text] [Related]  

  • 6. High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits.
    Song HS; Li SL; Gao L; Xu Y; Ueno K; Tang J; Cheng YB; Tsukagoshi K
    Nanoscale; 2013 Oct; 5(20):9666-70. PubMed ID: 23989804
    [TBL] [Abstract][Full Text] [Related]  

  • 7. In
    Xu Q; Liu X; Wan B; Yang Z; Li F; Lu J; Hu G; Pan C; Wang ZL
    ACS Nano; 2018 Sep; 12(9):9608-9616. PubMed ID: 30188684
    [TBL] [Abstract][Full Text] [Related]  

  • 8. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
    Chang YK; Hong FC
    Nanotechnology; 2009 May; 20(19):195302. PubMed ID: 19420638
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Scalable complementary logic gates with chemically doped semiconducting carbon nanotube transistors.
    Lee SY; Lee SW; Kim SM; Yu WJ; Jo YW; Lee YH
    ACS Nano; 2011 Mar; 5(3):2369-75. PubMed ID: 21370895
    [TBL] [Abstract][Full Text] [Related]  

  • 10. High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates.
    Javey A; Kim H; Brink M; Wang Q; Ural A; Guo J; McIntyre P; McEuen P; Lundstrom M; Dai H
    Nat Mater; 2002 Dec; 1(4):241-6. PubMed ID: 12618786
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Large-Area CVD-Grown Sub-2 V ReS
    Dathbun A; Kim Y; Kim S; Yoo Y; Kang MS; Lee C; Cho JH
    Nano Lett; 2017 May; 17(5):2999-3005. PubMed ID: 28414455
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe
    Li X; Zhou P; Hu X; Rivers E; Watanabe K; Taniguchi T; Akinwande D; Friedman JS; Incorvia JAC
    ACS Nano; 2023 Jul; 17(13):12798-12808. PubMed ID: 37377371
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Ultrahigh-performance inverters based on CdS nanobelts.
    Wu P; Ye Y; Sun T; Peng R; Wen X; Xu W; Liu C; Dai L
    ACS Nano; 2009 Oct; 3(10):3138-42. PubMed ID: 19757800
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Ultrafast, superhigh gain visible-blind UV detector and optical logic gates based on nonpolar a-axial GaN nanowire.
    Wang X; Zhang Y; Chen X; He M; Liu C; Yin Y; Zou X; Li S
    Nanoscale; 2014 Oct; 6(20):12009-17. PubMed ID: 25179348
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Macroelectronic integrated circuits using high-performance separated carbon nanotube thin-film transistors.
    Wang C; Zhang J; Zhou C
    ACS Nano; 2010 Dec; 4(12):7123-32. PubMed ID: 21062091
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Electrical characteristics of silicon nanowire transistors fabricated by scanning probe and electron beam lithographies.
    Ryu YK; Chiesa M; Garcia R
    Nanotechnology; 2013 Aug; 24(31):315205. PubMed ID: 23857981
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Complementary symmetry nanowire logic circuits: experimental demonstrations and in silico optimizations.
    Sheriff BA; Wang D; Heath JR; Kurtin JN
    ACS Nano; 2008 Sep; 2(9):1789-98. PubMed ID: 19206417
    [TBL] [Abstract][Full Text] [Related]  

  • 18. p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating.
    Ullah AR; Meyer F; Gluschke JG; Naureen S; Caroff P; Krogstrup P; Nygård J; Micolich AP
    Nano Lett; 2018 Sep; 18(9):5673-5680. PubMed ID: 30134098
    [TBL] [Abstract][Full Text] [Related]  

  • 19. High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.
    Van NH; Lee JH; Sohn JI; Cha SN; Whang D; Kim JM; Kang DJ
    Nanoscale; 2014 May; 6(10):5479-83. PubMed ID: 24727896
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.
    Lee M; Koo J; Chung EA; Jeong DY; Koo YS; Kim S
    Nanotechnology; 2009 Nov; 20(45):455201. PubMed ID: 19822935
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 11.