372 related articles for article (PubMed ID: 22051676)
1. Room temperature coherent control of defect spin qubits in silicon carbide.
Koehl WF; Buckley BB; Heremans FJ; Calusine G; Awschalom DD
Nature; 2011 Nov; 479(7371):84-7. PubMed ID: 22051676
[TBL] [Abstract][Full Text] [Related]
2. Polytype control of spin qubits in silicon carbide.
Falk AL; Buckley BB; Calusine G; Koehl WF; Dobrovitski VV; Politi A; Zorman CA; Feng PX; Awschalom DD
Nat Commun; 2013; 4():1819. PubMed ID: 23652007
[TBL] [Abstract][Full Text] [Related]
3. All-optical coherent population trapping with defect spin ensembles in silicon carbide.
Zwier OV; O'Shea D; Onur AR; van der Wal CH
Sci Rep; 2015 Jun; 5():10931. PubMed ID: 26047132
[TBL] [Abstract][Full Text] [Related]
4. Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast.
Li Q; Wang JF; Yan FF; Zhou JY; Wang HF; Liu H; Guo LP; Zhou X; Gali A; Liu ZH; Wang ZQ; Sun K; Guo GP; Tang JS; Li H; You LX; Xu JS; Li CF; Guo GC
Natl Sci Rev; 2022 May; 9(5):nwab122. PubMed ID: 35668749
[TBL] [Abstract][Full Text] [Related]
5. Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control.
Crook AL; Anderson CP; Miao KC; Bourassa A; Lee H; Bayliss SL; Bracher DO; Zhang X; Abe H; Ohshima T; Hu EL; Awschalom DD
Nano Lett; 2020 May; 20(5):3427-3434. PubMed ID: 32208710
[TBL] [Abstract][Full Text] [Related]
6. Optical charge state control of spin defects in 4H-SiC.
Wolfowicz G; Anderson CP; Yeats AL; Whiteley SJ; Niklas J; Poluektov OG; Heremans FJ; Awschalom DD
Nat Commun; 2017 Nov; 8(1):1876. PubMed ID: 29192288
[TBL] [Abstract][Full Text] [Related]
7. Quantum register based on individual electronic and nuclear spin qubits in diamond.
Dutt MV; Childress L; Jiang L; Togan E; Maze J; Jelezko F; Zibrov AS; Hemmer PR; Lukin MD
Science; 2007 Jun; 316(5829):1312-6. PubMed ID: 17540898
[TBL] [Abstract][Full Text] [Related]
8. Coherent control of the silicon-vacancy spin in diamond.
Pingault B; Jarausch DD; Hepp C; Klintberg L; Becker JN; Markham M; Becher C; Atatüre M
Nat Commun; 2017 May; 8():15579. PubMed ID: 28555618
[TBL] [Abstract][Full Text] [Related]
9. Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature.
Gottscholl A; Kianinia M; Soltamov V; Orlinskii S; Mamin G; Bradac C; Kasper C; Krambrock K; Sperlich A; Toth M; Aharonovich I; Dyakonov V
Nat Mater; 2020 May; 19(5):540-545. PubMed ID: 32094496
[TBL] [Abstract][Full Text] [Related]
10. Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions.
Niethammer M; Widmann M; Rendler T; Morioka N; Chen YC; Stöhr R; Hassan JU; Onoda S; Ohshima T; Lee SY; Mukherjee A; Isoya J; Son NT; Wrachtrup J
Nat Commun; 2019 Dec; 10(1):5569. PubMed ID: 31804489
[TBL] [Abstract][Full Text] [Related]
11. Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide.
Riedel D; Fuchs F; Kraus H; Väth S; Sperlich A; Dyakonov V; Soltamova AA; Baranov PG; Ilyin VA; Astakhov GV
Phys Rev Lett; 2012 Nov; 109(22):226402. PubMed ID: 23368138
[TBL] [Abstract][Full Text] [Related]
12. Room-temperature control and electrical readout of individual nitrogen-vacancy nuclear spins.
Gulka M; Wirtitsch D; Ivády V; Vodnik J; Hruby J; Magchiels G; Bourgeois E; Gali A; Trupke M; Nesladek M
Nat Commun; 2021 Jul; 12(1):4421. PubMed ID: 34285223
[TBL] [Abstract][Full Text] [Related]
13. Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide.
Mu Z; Zargaleh SA; von Bardeleben HJ; Fröch JE; Nonahal M; Cai H; Yang X; Yang J; Li X; Aharonovich I; Gao W
Nano Lett; 2020 Aug; 20(8):6142-6147. PubMed ID: 32644809
[TBL] [Abstract][Full Text] [Related]
14. Isolated electron spins in silicon carbide with millisecond coherence times.
Christle DJ; Falk AL; Andrich P; Klimov PV; Hassan JU; Son NT; Janzén E; Ohshima T; Awschalom DD
Nat Mater; 2015 Feb; 14(2):160-3. PubMed ID: 25437259
[TBL] [Abstract][Full Text] [Related]
15. Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC.
Soltamov VA; Soltamova AA; Baranov PG; Proskuryakov II
Phys Rev Lett; 2012 Jun; 108(22):226402. PubMed ID: 23003631
[TBL] [Abstract][Full Text] [Related]
16. Formation of Paramagnetic Defects in the Synthesis of Silicon Carbide.
Mukesh N; Márkus BG; Jegenyes N; Bortel G; Bezerra SM; Simon F; Beke D; Gali A
Micromachines (Basel); 2023 Jul; 14(8):. PubMed ID: 37630053
[TBL] [Abstract][Full Text] [Related]
17. Quantum computing with defects.
Weber JR; Koehl WF; Varley JB; Janotti A; Buckley BB; Van de Walle CG; Awschalom DD
Proc Natl Acad Sci U S A; 2010 May; 107(19):8513-8. PubMed ID: 20404195
[TBL] [Abstract][Full Text] [Related]
18. Ultrafast optical control of orbital and spin dynamics in a solid-state defect.
Bassett LC; Heremans FJ; Christle DJ; Yale CG; Burkard G; Buckley BB; Awschalom DD
Science; 2014 Sep; 345(6202):1333-7. PubMed ID: 25123482
[TBL] [Abstract][Full Text] [Related]
19. Coherent Control and Magnetic Detection of Divacancy Spins in Silicon Carbide at High Pressures.
Liu L; Wang JF; Liu XD; Xu HA; Cui JM; Li Q; Zhou JY; Lin WX; He ZX; Xu W; Wei Y; Liu ZH; Wang P; Hao ZH; Ding JF; Li HO; Liu W; Li H; You L; Xu JS; Gregoryanz E; Li CF; Guo GC
Nano Lett; 2022 Dec; 22(24):9943-9950. PubMed ID: 36507869
[TBL] [Abstract][Full Text] [Related]
20. Spin-defect qubits in two-dimensional transition metal dichalcogenides operating at telecom wavelengths.
Lee Y; Hu Y; Lang X; Kim D; Li K; Ping Y; Fu KC; Cho K
Nat Commun; 2022 Dec; 13(1):7501. PubMed ID: 36473851
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
