502 related articles for article (PubMed ID: 22067017)
1. Electrical properties and magnetic response of cobalt germanosilicide nanowires.
Tsai CI; Wang CY; Tang J; Hung MH; Wang KL; Chen LJ
ACS Nano; 2011 Dec; 5(12):9552-8. PubMed ID: 22067017
[TBL] [Abstract][Full Text] [Related]
2. Composition-tuned Co(n)Si nanowires: location-selective simultaneous growth along temperature gradient.
Seo K; Lee S; Yoon H; In J; Varadwaj KS; Jo Y; Jung MH; Kim J; Kim B
ACS Nano; 2009 May; 3(5):1145-50. PubMed ID: 19388670
[TBL] [Abstract][Full Text] [Related]
3. Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires.
Nah J; Dillen DC; Varahramyan KM; Banerjee SK; Tutuc E
Nano Lett; 2012 Jan; 12(1):108-12. PubMed ID: 22111925
[TBL] [Abstract][Full Text] [Related]
4. Characterization of impurity doping and stress in Si/Ge and Ge/Si core-shell nanowires.
Fukata N; Mitome M; Sekiguchi T; Bando Y; Kirkham M; Hong JI; Wang ZL; Snyder RL
ACS Nano; 2012 Oct; 6(10):8887-95. PubMed ID: 22947081
[TBL] [Abstract][Full Text] [Related]
5. Gold-catalyzed vapor-liquid-solid germanium-nanowire nucleation on porous silicon.
Koto M; Marshall AF; Goldthorpe IA; McIntyre PC
Small; 2010 May; 6(9):1032-7. PubMed ID: 20411571
[TBL] [Abstract][Full Text] [Related]
6. Metastable Ge1-xCx alloy nanowires.
Kim BS; Lee JH; Son K; Hwang SW; Choi BL; Lee EK; Kim JM; Whang D
ACS Appl Mater Interfaces; 2012 Feb; 4(2):805-10. PubMed ID: 22201458
[TBL] [Abstract][Full Text] [Related]
7. Directed synthesis of germanium oxide nanowires by vapor-liquid-solid oxidation.
Gunji M; Thombare SV; Hu S; McIntyre PC
Nanotechnology; 2012 Sep; 23(38):385603. PubMed ID: 22947505
[TBL] [Abstract][Full Text] [Related]
8. Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.
Hu Z; Zhang X; Xie C; Wu C; Zhang X; Bian L; Wu Y; Wang L; Zhang Y; Jie J
Nanoscale; 2011 Nov; 3(11):4798-803. PubMed ID: 21952747
[TBL] [Abstract][Full Text] [Related]
9. Nanochannel-directed growth of multi-segment nanowire heterojunctions of metallic Au(1-x)Ge(x) and semiconducting Ge.
Li X; Meng G; Qin S; Xu Q; Chu Z; Zhu X; Kong M; Li AP
ACS Nano; 2012 Jan; 6(1):831-6. PubMed ID: 22195681
[TBL] [Abstract][Full Text] [Related]
10. Global faceting behavior of strained Ge islands on Si.
Robinson JT; Rastelli A; Schmidt O; Dubon OD
Nanotechnology; 2009 Feb; 20(8):085708. PubMed ID: 19417469
[TBL] [Abstract][Full Text] [Related]
11. Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires.
Zhang X; Lew KK; Nimmatoori P; Redwing JM; Dickey EC
Nano Lett; 2007 Oct; 7(10):3241-5. PubMed ID: 17894516
[TBL] [Abstract][Full Text] [Related]
12. Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.
Habicht S; Zhao QT; Feste SF; Knoll L; Trellenkamp S; Ghyselen B; Mantl S
Nanotechnology; 2010 Mar; 21(10):105701. PubMed ID: 20154367
[TBL] [Abstract][Full Text] [Related]
13. Metallic single-crystal CoSi nanowires via chemical vapor deposition of single-source precursor.
Schmitt AL; Zhu L; Schmeisser D; Himpsel FJ; Jin S
J Phys Chem B; 2006 Sep; 110(37):18142-6. PubMed ID: 16970428
[TBL] [Abstract][Full Text] [Related]
14. An advanced fabrication method of highly ordered ZnO nanowire arrays on silicon substrates by atomic layer deposition.
Subannajui K; Güder F; Danhof J; Menzel A; Yang Y; Kirste L; Wang C; Cimalla V; Schwarz U; Zacharias M
Nanotechnology; 2012 Jun; 23(23):235607. PubMed ID: 22609898
[TBL] [Abstract][Full Text] [Related]
15. Magnetic properties of planar nanowire arrays of Co fabricated on oxidized step-bunched silicon templates.
Arora SK; O'Dowd BJ; Ballesteros B; Gambardella P; Shvets IV
Nanotechnology; 2012 Jun; 23(23):235702. PubMed ID: 22595752
[TBL] [Abstract][Full Text] [Related]
16. The impact of erbium incorporation on the structure and photophysics of silicon-germanium nanowires.
Wu J; Wieligor M; Zerda TW; Coffer JL
Nanoscale; 2010 Dec; 2(12):2657-67. PubMed ID: 20931125
[TBL] [Abstract][Full Text] [Related]
17. Tunable p-type conductivity and transport properties of AlN nanowires via Mg doping.
Tang YB; Bo XH; Xu J; Cao YL; Chen ZH; Song HS; Liu CP; Hung TF; Zhang WJ; Cheng HM; Bello I; Lee ST; Lee CS
ACS Nano; 2011 May; 5(5):3591-8. PubMed ID: 21480640
[TBL] [Abstract][Full Text] [Related]
18. Facile synthesis of highly uniform Mn/Co-codoped ZnO nanowires: optical, electrical, and magnetic properties.
Li H; Huang Y; Zhang Q; Qiao Y; Gu Y; Liu J; Zhang Y
Nanoscale; 2011 Feb; 3(2):654-60. PubMed ID: 21113544
[TBL] [Abstract][Full Text] [Related]
19. Diameter-dependent dopant location in silicon and germanium nanowires.
Xie P; Hu Y; Fang Y; Huang J; Lieber CM
Proc Natl Acad Sci U S A; 2009 Sep; 106(36):15254-8. PubMed ID: 19706402
[TBL] [Abstract][Full Text] [Related]
20. Field-effect modulation of thermoelectric properties in multigated silicon nanowires.
Curtin BM; Codecido EA; Krämer S; Bowers JE
Nano Lett; 2013; 13(11):5503-8. PubMed ID: 24138582
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
